公开(公告)号：EP2905357A4

公开(公告)日：2016-11-30

申请号：EP12886112

申请日：2012-10-31

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C23C30/00 ,  C22C5/06 ,  C22C5/08 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C22C19/05 ,  C22C28/00 ,  C25D3/02 ,  C25D3/12 ,  C25D5/10 ,  C25D5/50 ,  C25D7/00 ,  H01B5/02 ,  H01R13/03

CPC分类号： H01R13/03 ,  B32B15/01 ,  C22C5/06 ,  C22C9/00 ,  C22C13/00 ,  C22C19/03 ,  C22C28/00 ,  C25D5/10 ,  C25D5/505 ,  Y10T428/12715 ,  Y10T428/12722

摘要： There are provided an electronic component metal material having low insertability/extractability, low whisker formability and high durability, and a method for manufacturing the electronic component metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness larger than 0.2 µm, and the middle layer (B layer) 13 has a thickness of 0.001 µm or larger.

公开(公告)号：EP2868776A4

公开(公告)日：2016-03-02

申请号：EP13809664

申请日：2013-06-27

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C25D7/00 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06 ,  C22C13/00 ,  C22C28/00 ,  C23C18/16 ,  C23C28/02 ,  C25D5/10 ,  C25D5/48 ,  C25D5/50 ,  C25D9/06 ,  C25D11/36 ,  H01B1/02 ,  H01B5/02 ,  H01R13/03

CPC分类号： H01R13/03 ,  B32B15/01 ,  C22C5/06 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1882 ,  C23C28/021 ,  C25D3/12 ,  C25D3/18 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D5/10 ,  C25D5/48 ,  C25D5/50 ,  C25D5/505 ,  C25D7/00 ,  C25D9/06 ,  C25D11/36 ,  H01B1/02 ,  H01R12/716 ,  H05K1/184 ,  Y10T428/12681 ,  Y10T428/12708 ,  Y10T428/12715

公开(公告)号：EP2905356A4

公开(公告)日：2016-06-01

申请号：EP12886098

申请日：2012-10-31

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C23C30/00 ,  C22C5/06 ,  C22C5/08 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C22C19/05 ,  C25D3/02 ,  C25D3/12 ,  C25D7/00 ,  H01B5/02 ,  H01R13/03

CPC分类号： C22C5/06 ,  B32B15/01 ,  C22C5/02 ,  C22C5/08 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C22C28/00 ,  C23C28/021 ,  C25D3/04 ,  C25D3/18 ,  C25D3/20 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/48 ,  C25D3/50 ,  C25D3/562 ,  C25D3/60 ,  C25D3/64 ,  C25D5/10 ,  C25D5/12 ,  C25D5/505 ,  C25D7/00

摘要： There are provided an electronic component metal material which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The electronic component metal material 10 includes a base material 11, an A layer 14 constituting an outermost surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the outermost surface layer (A layer) 14 has a thickness of 0.002 to 0.2 µm, and the middle layer (B layer) 13 has a thickness larger than 0.3 µm.

公开(公告)号：EP2868773A4

公开(公告)日：2016-05-25

申请号：EP13810446

申请日：2013-06-27

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C23C30/00 ,  B32B15/01 ,  C22C5/06 ,  C23C28/02 ,  C25D3/10 ,  C25D3/12 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/56 ,  C25D5/10 ,  C25D5/12 ,  C25D5/48 ,  C25D5/50 ,  C25D7/00 ,  C25D11/36 ,  H01B1/02 ,  H01B5/02 ,  H01R13/03

CPC分类号： H01R4/58 ,  B32B15/018 ,  C22C5/06 ,  C23C22/07 ,  C23C28/021 ,  C25D3/12 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/562 ,  C25D5/10 ,  C25D5/12 ,  C25D5/48 ,  C25D5/50 ,  C25D5/505 ,  C25D7/00 ,  C25D9/02 ,  C25D11/36 ,  H01B1/02 ,  H01R13/03 ,  H01R43/00 ,  Y10T428/12472 ,  Y10T428/12722 ,  Y10T428/12778

摘要： The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer being constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir; and an upper layer formed on the intermediate layer, the upper layer being constituted with an alloy composed of one or two or more selected from the constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 µm or more and less than 5.00 µm; the thickness of the intermediate layer is 0.01 µm or more and less than 0.50 µm; and the thickness of the upper layer is 0.02 µm or more and less than 0.80 µm.

公开(公告)号：EP2899298A4

公开(公告)日：2016-06-29

申请号：EP13838846

申请日：2013-07-05

申请人： JX NIPPON MINING & METALS CORP

发明人： KODAMA ATSUSHI ,  SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO

IPC分类号： C23C28/00 ,  B32B15/01 ,  C09D4/00 ,  C22C5/06 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C23C10/28 ,  C23C28/02 ,  C25D3/30 ,  C25D3/32 ,  C25D3/46 ,  C25D5/12 ,  C25D5/48 ,  C25D5/50 ,  C25D7/00 ,  C25D9/06 ,  H01R12/71 ,  H01R13/03

CPC分类号： C25D3/18 ,  B32B15/01 ,  C09D4/00 ,  C22C5/06 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C23C10/28 ,  C23C28/021 ,  C25D3/30 ,  C25D3/32 ,  C25D3/46 ,  C25D5/12 ,  C25D5/48 ,  C25D5/505 ,  C25D7/00 ,  C25D9/06 ,  H01R12/716 ,  H01R13/03 ,  Y10T428/12493 ,  Y10T428/12722 ,  Y10T428/12896

摘要： The present invention provides a surface treated plating material being suppressed in the occurrence of whiskers, maintaining satisfactory solderability and satisfactory contact resistance even when exposed to a high temperature environment, and being low in the terminal-connector insertion force. The surface treated plating material is a plating material including: a metal base material; a lower layer constituted with Ni or Ni alloy plating; and an upper layer constituted with Sn or Sn alloy plating, wherein the lower layer and the upper layer are sequentially formed on the metal base material; P and N are present on the upper layer surface; the amounts of the P and N elements deposited on the upper layer surface are respectively P: 1 × 10 -11 to 4 × 10 -8 mol/cm 2 , N: 2 × 10 -12 to 8 × 10 -9 mol/cm 2 .

公开(公告)号：EP2868772A4

公开(公告)日：2016-05-25

申请号：EP13810156

申请日：2013-06-27

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C23C30/00 ,  C22C5/06 ,  C23C22/07 ,  C23C28/02 ,  C25D5/10 ,  C25D5/12 ,  C25D5/48 ,  C25D5/50 ,  C25D7/00 ,  C25D11/36 ,  H01B1/02 ,  H01B5/02 ,  H01R13/03 ,  H01R13/04

CPC分类号： H01R13/03 ,  C22C5/06 ,  C23C22/07 ,  C23C28/021 ,  C25D5/10 ,  C25D5/12 ,  C25D5/48 ,  C25D5/50 ,  C25D5/505 ,  C25D7/00 ,  C25D11/36 ,  H01B1/02 ,  H01B5/00 ,  Y10T428/12389 ,  Y10T428/12681 ,  Y10T428/12715

摘要： The present invention provides metallic materials for electronic components, having low degree of whisker formation, low adhesive wear property and high durability, and connector terminals, connectors and electronic components using such metallic materials. The metallic material for electronic components includes: a base material; a lower layer formed on the base material, the lower layer being constituted with one or two or more selected from a constituent element group A, namely, the group consisting of Ni, Cr, Mn, Fe, Co and Cu; an intermediate layer formed on the lower layer, the intermediate layer including an alloy constituted with one or two or more selected from a constituent element group B, namely, the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os and Ir, and one or two selected from a constituent element group C, namely, the group consisting of Sn and In; and an upper layer formed on the intermediate layer, the upper layer being constituted with one or two selected from a constituent element group C, namely, the group consisting of Sn and In; wherein the thickness of the lower layer is 0.05 µm or more and less than 5.00 µm; the thickness of the intermediate layer is 0.02 µm or more and less than 0.80 µm; and the thickness of the upper layer is 0.005 µm or more and less than 0.30 µm.

公开(公告)号：EP2759622A4

公开(公告)日：2016-03-16

申请号：EP12834344

申请日：2012-09-10

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： B32B15/01 ,  C22C5/06 ,  C22C5/08 ,  C22C5/10 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C22C19/07 ,  C22C22/00 ,  C22C27/06 ,  C22C38/00 ,  C23C18/16 ,  C25D3/12 ,  C25D3/20 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/50 ,  C25D3/56 ,  C25D3/62 ,  C25D3/64 ,  C25D5/10 ,  C25D5/12 ,  C25D5/50 ,  H01R13/03 ,  H05K1/11 ,  H05K3/24

CPC分类号： H01B1/02 ,  B32B15/01 ,  B32B15/018 ,  C22C5/06 ,  C22C5/08 ,  C22C5/10 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C22C19/07 ,  C22C22/00 ,  C22C27/06 ,  C22C38/00 ,  C23C18/1651 ,  C23C18/1692 ,  C25D3/12 ,  C25D3/20 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/50 ,  C25D3/567 ,  C25D3/62 ,  C25D3/64 ,  C25D5/10 ,  C25D5/12 ,  C25D5/505 ,  H01R13/03 ,  H05K1/117 ,  H05K1/118 ,  H05K3/244 ,  H05K2201/0341 ,  Y10T428/12681 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722

摘要： There are provided a metal material for electronic component which has low insertability/extractability, low whisker formability, and high durability, and a method for manufacturing the metal material. The metal material 10 for electronic components has a base material 11, an A layer 14 constituting a surface layer on the base material 11 and formed of Sn, In or an alloy thereof, and a B layer 13 constituting a middle layer provided between the base material 11 and the A layer 14 and formed of Ag, Au, Pt, Pd, Ru, Rh, Os, Ir or an alloy thereof, wherein the surface layer (A layer) 14 has a thickness of 0.002 to 0.2 µm, and the middle layer (B layer) 13 has a thickness of 0.001 to 0.3 µm.

摘要翻译： 提供了一种电子部件用金属材料，其具有低插入性/提取性，低晶须成形性和高耐久性，以及金属材料的制造方法。 用于电子部件的金属材料10具有基材11，在基材11上构成表面层的A层14，由Sn，In或其合金构成，B层13构成中间层，B层13设置在基材 材料11和A层14，其由Ag，Au，Pt，Pd，Ru，Rh，Os，Ir或其合金形成，其中表面层（A层）14具有0.002至0.2μm的厚度， 中间层（B层）13的厚度为0.001〜0.3μm。

公开(公告)号：EP2878704A4

公开(公告)日：2016-02-24

申请号：EP13823522

申请日：2013-06-25

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C23C30/00 ,  C22C5/06 ,  C22C13/00 ,  C22C19/03 ,  C23C28/00 ,  C25D5/10 ,  C25D7/00 ,  H01B1/02 ,  H01B5/02

CPC分类号： H01B5/00 ,  B32B15/01 ,  C09D4/00 ,  C22C5/06 ,  C22C13/00 ,  C22C19/03 ,  C23C22/58 ,  C23C28/00 ,  C23C28/021 ,  C23C30/00 ,  C25D3/12 ,  C25D3/18 ,  C25D3/30 ,  C25D3/38 ,  C25D3/46 ,  C25D3/562 ,  C25D5/10 ,  C25D5/12 ,  C25D5/14 ,  C25D5/34 ,  C25D5/505 ,  C25D7/00 ,  H01B1/02 ,  H01B13/00 ,  H01R12/79 ,  H01R13/03 ,  Y10T428/12472 ,  Y10T428/12535 ,  Y10T428/1266 ,  Y10T428/12715 ,  Y10T428/12722 ,  Y10T428/12896

公开(公告)号：EP2829637A4

公开(公告)日：2015-12-09

申请号：EP13763959

申请日：2013-01-25

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C23C28/02 ,  C22C5/02 ,  C22C5/04 ,  C22C5/06 ,  C22C5/08 ,  C22C5/10 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/05 ,  C22C9/06 ,  C22C13/00 ,  C22C13/02 ,  C22C19/03 ,  C22C19/07 ,  C22C22/00 ,  C22C27/06 ,  C22C28/00 ,  C22C38/00 ,  C23C14/14

CPC分类号： H01B1/02 ,  B32B15/01 ,  B32B15/018 ,  C22C5/04 ,  C22C5/06 ,  C22C13/00 ,  C22C19/03 ,  C23C10/28 ,  C23C10/60 ,  C23C14/14 ,  C23C14/58 ,  C23C28/021 ,  H01R4/58 ,  H01R13/03 ,  H05K1/09 ,  H05K3/244 ,  Y10T428/12681 ,  Y10T428/12708 ,  Y10T428/12715 ,  Y10T428/12722

公开(公告)号：EP2811051A4

公开(公告)日：2015-09-30

申请号：EP13744251

申请日：2013-01-30

申请人： JX NIPPON MINING & METALS CORP

发明人： SHIBUYA YOSHITAKA ,  FUKAMACHI KAZUHIKO ,  KODAMA ATSUSHI

IPC分类号： C23C28/02 ,  C25D5/12 ,  C25D7/00 ,  H01R12/58 ,  H01R13/03

CPC分类号： H01R13/03 ,  C23C28/023 ,  C25D3/30 ,  C25D3/50 ,  C25D3/54 ,  C25D3/60 ,  C25D5/12 ,  C25D7/00 ,  H01R12/585

摘要： There are provided a press-fit terminal which has an excellent whisker resistance and a low inserting force, is unlikely to cause shaving of plating when the press-fit terminal is inserted into a substrate, and has a high heat resistance, and an electronic component using the same. A press-fit terminal comprises: a female terminal connection part provided at one side of an attached part to be attached to a housing; and a substrate connection part provided at the other side and attached to a substrate by press-fitting the substrate connection part into a through-hole formed in the substrate. At least the substrate connection part has the surface structure described below, and the press-fit terminal has an excellent whisker resistance. The surface structure comprises: an A layer formed as an outermost surface layer and formed of Sn, In, or an alloy thereof; a B layer formed below the A layer and constituted of one or two or more selected from the group consisting of Ag, Au, Pt, Pd, Ru, Rh, Os, and Ir; and a C layer formed below the B layer and constituted of one or two or more selected from the group consisting of Ni, Cr, Mn, Fe, Co, and Cu. The A layer has a thickness of 0.002 to 0.2 µm. The B layer has a thickness of 0.001 to 0.3 µm. The C layer has a thickness of 0.05 µm or larger.