公开(公告)号：EP1035583A2

公开(公告)日：2000-09-13

申请号：EP00104484.1

申请日：2000-03-09

申请人： KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

发明人： Homma, Soichi ,  Miyata, Masahiro ,  Ezawa, Hirokazu ,  Yoshioka, Junichiro ,  Inoue, Hiroaki ,  Tokuoka, Tsuyoshi

IPC分类号： H01L23/532

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/02126 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/207 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag 3 Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag 3 Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

摘要翻译： 本半导体元件包括半导体衬底，形成在其上的布线焊盘，形成在其上的阻挡金属层，形成在其上的金属间化合物Ag3Sn，以及由其上形成的低熔点金属组成的突出电极。 此外，半导体元件的制造方法包括以下步骤：在半导体衬底上形成布线焊盘，在其上形成阻挡金属层，在其上形成含有Ag的金属层，在其上形成含有Sn的低熔点金属层 并且熔化含有Sn的低熔点金属层以形成突出的电极，同时在包含Ag的金属层和含有Sn的低熔点金属层之间的界面处形成金属间化合物Ag 3 Sn。 因此，对于无铅焊料，可以获得高可靠性的半导体元件。

公开(公告)号：EP1035583B1

公开(公告)日：2007-11-14

申请号：EP00104484.1

申请日：2000-03-09

申请人： KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

发明人： Homma, Soichi ,  Miyata, Masahiro ,  Ezawa, Hirokazu ,  Yoshioka, Junichiro ,  Inoue, Hiroaki ,  Tokuoka, Tsuyoshi

IPC分类号： H01L23/532 ,  H01L23/485 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/02126 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/207 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present semiconductor element comprises a semiconductor substrate, a wiring pad formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag3Sn formed thereon, and a protruded electrode consisting of low-melting metal formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag3Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

公开(公告)号：EP1035583A3

公开(公告)日：2001-05-09

申请号：EP00104484.1

申请日：2000-03-09

申请人： KABUSHIKI KAISHA TOSHIBA ,  EBARA CORPORATION

发明人： Homma, Soichi ,  Miyata, Masahiro ,  Ezawa, Hirokazu ,  Yoshioka, Junichiro ,  Inoue, Hiroaki ,  Tokuoka, Tsuyoshi

IPC分类号： H01L23/532 ,  H01L23/485 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/02126 ,  H01L2224/0347 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/0558 ,  H01L2224/05639 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2224/16507 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01041 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01092 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/207 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2924/00 ,  H01L2224/05552

摘要： The present semiconductor element comprises a semiconductor substrate (1), a wiring pad (2) formed thereon, a layer of barrier metal formed thereon, an intermetallic compound Ag 3 Sn (7) formed thereon, and a protruded electrode consisting of low-melting metal (9) formed thereon. In addition, a fabricating method of a semiconductor element comprises the steps of forming a wiring pad on a semiconductor substrate, forming a layer of barrier metal thereon, forming a metallic layer containing Ag (11) thereon, forming a layer of low-melting metal containing Sn thereon, and melting the layer of low-melting metal containing Sn to form a protruded electrode and simultaneously to form an intermetallic compound Ag 3 Sn at an interface between the metallic layer containing Ag and the layer of low-melting metal containing Sn. Thus, with Pb-free solder, a semiconductor element of high reliability can be obtained.

公开(公告)号：EP2017374A2

公开(公告)日：2009-01-21

申请号：EP08018576.2

申请日：2001-03-16

申请人： EBARA CORPORATION

发明人： Yoshioka, Junichiro ,  Saito, Nobutoshi ,  Mukaiyama, Yoshitaka ,  Tokuoka, Tsuyoshi

IPC分类号： C25D7/12 ,  C25D17/00 ,  C25D17/02 ,  C25D21/04 ,  C25D21/10

CPC分类号： C25D17/02 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/004 ,  C25D17/06 ,  C25D21/04 ,  C25D21/10 ,  C25D21/12

摘要： There is provided an apparatus suited for forming a plated film in fine trenches and plugs for interconnects, and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and for forming bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed; a plating tank accommodating a plating liquid in which an anode is immersed; a diaphragm provided in the plating tank and disposed between the anode and the substrate held by the substrate. holder; plating liquid circulating systems for circulating the plating liquid to the respective regions of the plating tank separated by the diaphragm; and a deaerating unit disposed in at least one of the plating liquid circulating systems.

摘要翻译： 提供了一种适合于形成用于互连的精细沟槽和插塞中的电镀膜的装置，以及形成在诸如半导体晶片的基板的表面中的抗蚀剂的开口中，并且用于在表面上形成凸块（突出电极） 的半导体晶片。 该装置包括能够打开和关闭用于保持基板的基板保持器，使得基板的前表面在其背侧和边缘被气密密封的同时露出; 容纳浸渍有阳极的电镀液的电镀槽; 设置在电镀槽中并设置在阳极和由基板保持的基板之间的隔膜。 持有人; 电镀液循环系统，用于将电镀液循环到由隔膜分隔的镀槽的各个区域; 以及设置在所述电镀液循环系统中的至少一个中的脱气单元。

公开(公告)号：EP2017374A3

公开(公告)日：2011-04-27

申请号：EP08018576.2

申请日：2001-03-16

申请人： EBARA CORPORATION

发明人： Yoshioka, Junichiro ,  Saito, Nobutoshi ,  Mukaiyama, Yoshitaka ,  Tokuoka, Tsuyoshi

IPC分类号： C25D7/12 ,  C25D17/00 ,  C25D17/02 ,  C25D21/04 ,  C25D21/10

CPC分类号： C25D17/02 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/004 ,  C25D17/06 ,  C25D21/04 ,  C25D21/10 ,  C25D21/12

摘要： There is provided an apparatus suited for forming a plated film in fine trenches and plugs for interconnects, and in the openings of a resist formed in the surface of a substrate such as a semiconductor wafer, and for forming bumps (protruding electrodes) on the surface of a semiconductor wafer. The apparatus includes a substrate holder capable of opening and closing for holding a substrate such that the front surface of the substrate is exposed while the backside and the edge thereof are hermetically sealed; a plating tank accommodating a plating liquid in which an anode is immersed; a diaphragm provided in the plating tank and disposed between the anode and the substrate held by the substrate. holder; plating liquid circulating systems for circulating the plating liquid to the respective regions of the plating tank separated by the diaphragm; and a deaerating unit disposed in at least one of the plating liquid circulating systems.

公开(公告)号：EP1516357A2

公开(公告)日：2005-03-23

申请号：EP03760917.9

申请日：2003-06-20

申请人： EBARA CORPORATION

发明人： Yoshioka, Junichiro ,  Horie, Kuniaki ,  Guo, Yugang ,  Morikami, Satoshi

IPC分类号： H01L21/00

CPC分类号： C25D17/001 ,  C25D7/12 ,  C25D7/123 ,  C25D17/004 ,  C25D17/005 ,  C25D17/06 ,  C25D17/08 ,  C25D21/12 ,  H01L21/2885 ,  H01L21/67126 ,  H01L21/67253 ,  H01L21/6838 ,  H01L21/687 ,  H01L21/68728 ,  H01L21/68764 ,  H01L21/76879 ,  H01L24/11 ,  H01L24/742 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/11462 ,  H01L2224/13099 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2924/00014 ,  H01L2924/01002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2224/05599

摘要： The present invention is to provide a substrate holder which can effect a more complete sealing with a sealing member and makes it possible to take a substrate out of it easily and securely, and also a plating apparatus provided with the substrate holder. A substrate holder (18), includes: a fixed holding member (54) and a movable holding member (58) for holding a substrate (W) therebetween; a sealing member (68) mounted to the fixed holding member (54) or the movable holding member (58); and a suction pad (94) for attracting a back surface of the substrate (W) held between the fixed holding member (54) and the movable holding member (58).

摘要翻译： 本发明的目的在于提供一种基板保持件，该基板保持件能够通过密封部件实现更完全的密封，并且能够简单且可靠地取出基板，还能够提供具备该基板保持件的电镀装置。 基板支架（18）包括：夹持基板（W）的固定保持构件（54）和可动保持构件（58） 安装在固定保持部件54或可动保持部件58上的密封部件68; 以及用于吸引保持在固定保持构件（54）与可动保持构件（58）之间的基板（W）的背面的吸附垫（94）。

公开(公告)号：EP0996144A1

公开(公告)日：2000-04-26

申请号：EP98119377.4

申请日：1998-10-14

申请人： EBARA CORPORATION

发明人： Shinozaki, Hiroyuki ,  Yoshioka, Junichiro ,  Maeda, Kazuaki ,  Hongo, Akihisa

IPC分类号： H01L21/00

CPC分类号： H01L21/68792 ,  F16C2300/62

摘要： A spin processing apparatus can prevent contamination of workpieces by wear particles, and can operate at high efficiency while lowering the noise level associated with the operation of the apparatus. The spin processing apparatus comprises a chamber, a spin holder disposed inside the chamber for holding workpieces, and driver device for rotating the spin holder. A supporting device is provided for rotatably supporting the spin holder in a non-contact manner through a magnetically-operated mechanism.

摘要翻译： 旋转处理装置可以防止磨损颗粒对工件的污染，并且可以在降低与装置的操作相关的噪声水平的同时高效率地运行。 旋转处理装置包括室，设置在室内用于保持工件的旋转架，以及用于旋转旋转架的驱动装置。 提供支撑装置，用于通过磁力操作机构以非接触方式可旋转地支撑旋转架。