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    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY
    3.
    发明公开
    FOCUS MEASUREMENTS USING SCATTEROMETRY METROLOGY 审中-公开
    FOKUSMESSUNGEN MIT SCATTEROMETRIE

    公开(公告)号：EP3126893A4

    公开(公告)日：2017-10-04

    申请号：EP15774184

    申请日：2015-03-30

    Applicant: KLA-TENCOR CORP

    Inventor： EL KODADI MOHAMMED ,  AMIR NURIEL ,  VOLKOVICH ROIE ,  LEVINSKI VLADIMIR ,  FELER YOEL ,  KANDEL DANIEL ,  GUTMAN NADAV ,  PANDEV STILIAN ,  SANKO DZMITRY

    IPC: G02B15/14 ,  G01N21/47 ,  G03F7/20 ,  G06F17/50 ,  H04N7/18

    CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

    Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

    Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元素的周期性结构。 元件沿着垂直于第一方向的第二方向以第二节距周期性地定向，并且在第二方向上通过具有第二节距的交替的聚焦敏感和聚焦不敏感的图案来表征。 在产生的目标中，第一间距可以是大约设备间距，并且第二间距可以大几倍。 可以产生第一焦点不敏感图案以产生第一临界尺寸，并且可以产生第二焦点敏感图案以产生仅当满足特定焦点要求时可以等于第一临界尺寸的第二临界尺寸， 或基于沿着垂直方向的较长节距提供零级散射测量以及第一衍射级。

    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS
    4.
    发明公开
    MULTI-LAYER OVERLAY METROLOGY TARGET AND COMPLIMENTARY OVERLAY METROLOGY MEASUREMENT SYSTEMS 审中-公开
    MEHRSCHICHTIGESÜBERLAPPUNGSMETROLOGIE-ZIEL UND ENTSPRECHENDEÜBERLAPPUNGSMETROLOGIE-MESSSYSTEME

    公开(公告)号：EP2601675A4

    公开(公告)日：2017-08-23

    申请号：EP11815104

    申请日：2011-07-28

    Applicant: KLA-TENCOR CORP

    Inventor： KANDEL DANIEL ,  LEVINSKI VLADIMIR ,  COHEN GUY

    IPC: H01L21/027

    CPC classification number: G03F7/70633 ,  G03F7/70683

    Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

    Abstract translation: 公开了用于基于成像的度量衡中的多层覆盖目标。 覆盖目标包括多个包括三个或更多个目标结构的目标结构，每个目标结构包括一组两个或更多个模式元素，其中目标结构被配置为在目标结构对齐时共享对称的共同中心，每个 目标结构围绕所述公共对称中心不变为N度旋转，其中N等于或大于180度，其中所述两个或更多个图案元件中的每一个具有单独的对称中心，其中所述两个或更多个图案中的每一个 每个目标结构的元素对于围绕单个对称中心的M度旋转是不变的，其中M等于或大于180度。

    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL
    6.
    发明公开
    METHOD AND SYSTEM FOR PROVIDING A QUALITY METRIC FOR IMPROVED PROCESS CONTROL 审中-公开
    用于提供改进的过程控制的质量方法的方法和系统

    公开(公告)号：EP2694983A4

    公开(公告)日：2014-10-29

    申请号：EP12768608

    申请日：2012-04-04

    Applicant: KLA TENCOR CORP

    Inventor： KANDEL DANIEL ,  COHEN GUY ,  KLEIN DANA ,  LEVINSKI VLADIMIR ,  SAPIENS NOAM ,  SHULMAN ALEX ,  KAMENETSKY VLADIMIR ,  AMIT ERAN ,  VAKSHTEIN IRINA

    IPC: G01N37/00 ,  G03F7/20

    CPC classification number: G03F7/70633 ,  G01N2223/6116

    Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

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