公开(公告)号：EP2865003A1

公开(公告)日：2015-04-29

申请号：EP13808673.1

申请日：2013-06-25

Applicant: Kla-Tencor Corporation

Inventor： MANASSEN, Amnon ,  HILL, Andy ,  KANDEL, Daniel ,  SELA, Ilan ,  BACHAR, Ohad ,  BRINGOLTZ, Barak

IPC: H01L21/66

CPC classification number: G01N21/55 ,  G01B11/00 ,  G01N21/9501 ,  G01N21/956 ,  G01N2201/06113 ,  G01N2201/104

Abstract: Angle-resolved reflectometers and reflectometry methods are provided, which comprise a coherent light source, an optical system arranged to scan a test pattern using a spot of coherent light from the light source to yield realizations of the light distribution in the collected pupil, wherein the spot covers a part of the test pattern and the scanning is carried out optically or mechanically according to a scanning pattern, and a processing unit arranged to generate a composite image of the collected pupil distribution by combining the pupil images. Metrology systems and methods are provided, which reduce diffraction errors by estimating, quantitatively, a functional dependency of measurement parameters on aperture sizes and deriving, from identified diffraction components of the functional dependency which relate to the aperture sizes, correction terms for the measurement parameters with respect to the measurement conditions.

公开(公告)号：EP2694983A1

公开(公告)日：2014-02-12

申请号：EP12768608.7

申请日：2012-04-04

Applicant: KLA-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G01N37/00

CPC classification number: G03F7/70633 ,  G01N2223/6116 ,  G03F1/48 ,  G03F7/70616

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：EP2386114A2

公开(公告)日：2011-11-16

申请号：EP10729404.3

申请日：2010-01-04

Applicant: KLA-Tencor Corporation

Inventor： ADEL, Michael E. ,  MANASSEN, Amnon ,  KANDEL, Daniel

IPC: H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

公开(公告)号：EP2959503B1

公开(公告)日：2018-05-30

申请号：EP14753960.5

申请日：2014-02-21

Applicant: Kla-Tencor Corporation

Inventor： BRADY, Gregory ,  SHCHEGROV, Andrei V. ,  ROTTER, Lawrence D. ,  SHAUGHNESSY, Derrick ,  SHCEMELININ, Anatoly ,  BEZEL, Ilya ,  ARAIN, Muzammil ,  VASILIEV, Anatoly ,  ALLEN, James ,  SHULEPOV, Oleg ,  HILL, Andrew ,  BACHAR, Ohad ,  MARKOWITZ, Moshe ,  ISH-SHALOM, Yaron ,  SELA, Ilan ,  MANASSEN, Amnon ,  SVIZHER, Alexander ,  KHOKHLOV, Maxim ,  ABRAMOV, Avi ,  TSIBULEVSKY, Oleg ,  KANDEL, Daniel ,  GHINOVKER, Mark

IPC: G01J3/10 ,  G01J3/12 ,  H01J65/04 ,  G01J3/02 ,  G02B6/35 ,  F21V13/00 ,  F21V13/08 ,  F21V13/12 ,  G02B6/293

CPC classification number: G01J3/10 ,  F21V13/00 ,  F21V13/08 ,  F21V13/12 ,  G01J3/0218 ,  G01J3/12 ,  G02B6/29332 ,  G02B6/29362 ,  G02B6/29388 ,  G02B6/29395 ,  G02B6/3508 ,  G02B6/353 ,  H01J65/04

Abstract: The disclosure is directed to systems for providing illumination to a measurement head for optical metrology. In some embodiments of the disclosure, illumination beams from a plurality of illumination sources are combined to deliver illumination at one or more selected wavelengths to the measurement head. In some embodiments of the disclosure, intensity and/or spatial coherence of illumination delivered to the measurement head is controlled. In some embodiments of the disclosure, illumination at one or more selected wavelengths is delivered from a broadband illumination source configured for providing illumination at a continuous range of wavelengths.

公开(公告)号：EP2601675A2

公开(公告)日：2013-06-12

申请号：EP11815104.2

申请日：2011-07-28

Applicant: KLA-Tencor Corporation

Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  COHEN, Guy

IPC: H01L21/027

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

公开(公告)号：EP3916758A1

公开(公告)日：2021-12-01

申请号：EP21186660.3

申请日：2011-07-28

Applicant: Kla-Tencor Corporation

Inventor： KANDEL, Daniel ,  LEVINSKI, Vladimir ,  Cohen, Guy

IPC: H01L21/027

Abstract: A multi-layer overlay target for use in imaging based metrology is disclosed. The overlay target includes a plurality of target structures including three or more target structures, each target structure including a set of two or more pattern elements, wherein the target structures are configured to share a common center of symmetry upon alignment of the target structures, each target structure being invariant to N degree rotation about the common center of symmetry, wherein N is equal to or greater than 180 degrees, wherein each of the two or more pattern elements has an individual center of symmetry, wherein each of the two or more pattern elements of each target structure is invariant to M degree rotation about the individual center of symmetry, wherein M is equal to or greater than 180 degrees.

公开(公告)号：EP3779598A3

公开(公告)日：2021-04-14

申请号：EP20177915.4

申请日：2012-04-04

Applicant: Kla-Tencor Corporation

Inventor： KANDEL, Daniel ,  COHEN, Guy ,  KLEIN, Dana ,  LEVINSKI, Vladimir ,  SAPIENS, Noam ,  SHULMAN, Alex ,  KAMENETSKY, Vladimir ,  AMIT, Eran ,  VAKSHTEIN, Irina

IPC: G03F7/20

Abstract: The present invention may include acquiring a plurality of overlay metrology measurement signals from a plurality of metrology targets distributed across one or more fields of a wafer of a lot of wafers, determining a plurality of overlay estimates for each of the plurality of overlay metrology measurement signals using a plurality of overlay algorithms, generating a plurality of overlay estimate distributions, and generating a first plurality of quality metrics utilizing the generated plurality of overlay estimate distributions, wherein each quality metric corresponds with one overlay estimate distribution of the generated plurality of overlay estimate distributions, each quality metric a function of a width of a corresponding generated overlay estimate distribution, each quality metric further being a function of asymmetry present in an overlay metrology measurement signal from an associated metrology target.

公开(公告)号：EP2386114B1

公开(公告)日：2018-10-31

申请号：EP10729404.3

申请日：2010-01-04

Applicant: KLA-Tencor Corporation

Inventor： ADEL, Michael E. ,  MANASSEN, Amnon ,  KANDEL, Daniel

IPC: G03F7/20 ,  H01L21/66

CPC classification number: G03F7/70683 ,  G03F7/705 ,  G03F7/70633 ,  H01L22/12

Abstract: A metrology target design may be optimized using inputs including metrology target design information, substrate information, process information, and metrology system information. Acquisition of a metrology signal with a metrology system may be modeled using the inputs to generate one or more optical characteristics of the metrology target. A metrology algorithm may be applied to the characteristics to determine a predicted accuracy and precision of measurements of the metrology target made by the metrology system. Part of the information relating to the metrology target design may be modified and the signal modeling and metrology algorithm may be repeated to optimize the accuracy and precision of the one or more measurements. The metrology target design may be displayed or stored after the accuracy and precision are optimized.

公开(公告)号：EP3126893A1

公开(公告)日：2017-02-08

申请号：EP15774184.4

申请日：2015-03-30

Applicant: Kla-Tencor Corporation

Inventor： EL KODADI, Mohammed ,  AMIR, Nuriel ,  VOLKOVICH, Roie ,  LEVINSKI, Vladimir ,  FELER, Yoel ,  KANDEL, Daniel ,  GUTMAN, Nadav ,  PANDEV, Stilian ,  SANKO, Dzmitry

IPC: G02B15/14 ,  H04N7/18

CPC classification number: G06F17/5081 ,  G01N21/4785 ,  G03F7/70641 ,  G03F7/70683 ,  G06F17/5072

Abstract: Target designs and methods are provided, which relate to periodic structures having elements recurring with a first pitch in a first direction. The elements are periodic with a second pitch along a second direction that is perpendicular to the first direction and are characterized in the second direction by alternating, focus-sensitive and focus-insensitive patterns with the second pitch. In the produced targets, the first pitch may be about the device pitch and the second pitch may be several times larger. The first, focus-insensitive pattern may be produced to yield a first critical dimension and the second, focus-sensitive pattern may be produced to yield a second critical dimension that may be equal to the first critical dimension only when specified focus requirements are satisfied, or provide scatterometry measurements of zeroth as well as first diffraction orders, based on the longer pitch along the perpendicular direction.

Abstract translation: 提供了目标设计和方法，其涉及具有在第一方向上以第一间距重复的元件的周期性结构。 这些元件沿着与第一方向垂直的第二方向具有第二间距周期性，并且通过具有第二间距的交替的聚焦敏感和对焦不敏感图案在第二方向上表征。 在所产生的目标中，第一节距可以是关于装置间距，并且第二节距可以是数倍大。 可以产生第一个不对焦模式，以产生第一关键尺寸，并且可以产生第二焦点敏感图案以产生仅当满足指定焦点要求时可以等于第一临界尺寸的第二临界尺寸， 或者基于沿着垂直方向的较长的间距来提供零和第一衍射级的散射测量。

公开(公告)号：EP2537180A2

公开(公告)日：2012-12-26

申请号：EP11745086.6

申请日：2011-02-14

Applicant: KLA-Tencor Corporation

Inventor： IZIKSON, Pavel ,  KANDEL, Daniel ,  ROBINSON, John

IPC: H01L21/66 ,  H01L21/027

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.