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公开(公告)号：EP1098300B1
公开(公告)日：2003-08-13
申请号：EP00127273.1
申请日：1998-01-16
CPC分类号： B82Y20/00 , G11B7/126 , G11B7/127 , G11B7/1381 , G11B7/24085 , H01S5/0211 , H01S5/0213 , H01S5/028 , H01S5/1064 , H01S5/125 , H01S5/22 , H01S5/2231 , H01S5/343 , H01S5/34333 , H01S5/347
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公开(公告)号：EP0854473A2
公开(公告)日：1998-07-22
申请号：EP98100691.9
申请日：1998-01-16
IPC分类号： G11B7/00
CPC分类号： B82Y20/00 , G11B7/126 , G11B7/127 , G11B7/1381 , G11B7/24085 , H01S5/0211 , H01S5/0213 , H01S5/028 , H01S5/1064 , H01S5/125 , H01S5/22 , H01S5/2231 , H01S5/343 , H01S5/34333 , H01S5/347
摘要： Laser light emitted from the wavelength-locked GaN semiconductor laser is collimated through a collimation lens, led through a polarization beam splitter and a 1/4 wavelength plate, and converged by a focus lens so as to be radiated on pits formed in an optical disk medium. The signal light from the optical disk medium is collimated by the focus lens, and has its polarization direction turned by the 1/4 wavelength plate by 90° relative to its polarization direction before being returned from the optical disk medium. As a result, the signal light is reflected from the polarization beam splitter so as to be converged on the optical detector by the focus lens.
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公开(公告)号：EP0952645B1
公开(公告)日：2004-12-15
申请号：EP99107985.6
申请日：1999-04-22
发明人： Kamiyama, Satoshi , Kume, Masahiro , Miyanaga, Ryoko , Kidoguchi, Isao , Ban, Yuzaburo , Tsujimura, Ayumu , Hasegawa, Yoshiaki , Ishibashi, Akihiko
IPC分类号： H01S5/32
CPC分类号： B82Y20/00 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34333
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4.发明公开Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device 审中-公开一种用于制造半导体工艺制造的半导体衬底和半导体发光装置的方法
公开(公告)号：EP1220333A2
公开(公告)日：2002-07-03
申请号：EP01130498.7
申请日：2001-12-20
发明人： Ishibashi, Akihiko , Tsujimura, Ayumu , Kawaguchi, Yasutoshi , Otsuka, Nobuyuki , Ohnaka, Kiyoshi
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L33/007 , H01L33/0075 , H01S5/021 , H01S5/0211 , H01S5/34333
摘要： The method for fabricating a semiconductor includes the steps of: (1) growing a first semiconductor layer made of Al x Ga 1-x N (0≦x≦1) on a substrate at a temperature higher than room temperature; and (2) growing a second semiconductor layer made of Al u Ga v In w N (0
摘要翻译： 用于制造半导体的方法，包括以下步骤：（1）生长由Al制成的第一半导体层X镓1-X N（0‰‰| X | 1）在高于室温的温度的基板; 和（2）生长由AlÙ镓V的W N的第二半导体层（0
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公开(公告)号：EP0952645A3
公开(公告)日：2001-03-21
申请号：EP99107985.6
申请日：1999-04-22
发明人： Kamiyama, Satoshi , Kume, Masahiro , Miyanaga, Ryoko , Kidoguchi, Isao , Ban, Yuzaburo , Tsujimura, Ayumu , Hasegawa, Yoshiaki , Ishibashi, Akihiko
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34333
摘要： A GaN buffer layer (12) and an Si-doped n-type GaN contact layer (13) are formed in this order on a sapphire substrate (11). An n-type Al 0.3 Ga 0.7 N cladding layer (14), an n-type Al 0.25 Ga 0.75 N optical guide layer (15), a multi-quantum well active layer (16), in which Al 0.2 Ga 0.8 N well layers and Al 0.25 Ga 0.75 N barrier layers are alternately stacked, an Mg-doped p-type Al 0.25 Ga 0.75 N optical guide layer (17), a p-type Al 0.4 Ga 0.6 N 0.98 P 0.02 cladding layer (18) and a p-type GaN contact layer (19) are stacked in this order on an active region on the upper surface of the n-type contact layer.
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6.发明公开Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same 有权氮化物半导体，氮化物半导体装置中，发光半导体器件及其制造方法
公开(公告)号：EP1104031A3
公开(公告)日：2005-10-12
申请号：EP00124829.3
申请日：2000-11-14
发明人： Kidoguchi, Isao , Ishibashi, Akihiko , Miyanaga, Ryoko , Sugahara, Gaku , Suzuki, Masakatsu , Kume, Masahiro , Ban, Yuzaburo , Morita, Kiyoyuki , Tsujimura, Ayumu , Hasegawa, Yoshiaki
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/007 , H01L33/405 , H01L33/46 , H01S5/2077 , H01S5/2201 , H01S5/32341 , H01S5/4031 , H01S2304/00
摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al u Ga v In w N, wherein 0 ≦ u, v, w ≦ 1 and u + v + w = 1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of Al x Ga y In z N, wherein 0 ≦ x, y, z ≦ 1 and x + y + z = 1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
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公开(公告)号：EP1024479B1
公开(公告)日：2002-11-06
申请号：EP00107195.0
申请日：1998-01-16
CPC分类号： B82Y20/00 , G11B7/126 , G11B7/127 , G11B7/1381 , G11B7/24085 , H01S5/0211 , H01S5/0213 , H01S5/028 , H01S5/1064 , H01S5/125 , H01S5/22 , H01S5/2231 , H01S5/343 , H01S5/34333 , H01S5/347
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8.发明公开Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device 审中-公开一种用于制造氮化物半导体的制造方法用于制造氮化物半导体器件的方法，和氮化物半导体器件
公开(公告)号：EP1220304A2
公开(公告)日：2002-07-03
申请号：EP01130923.4
申请日：2001-12-27
发明人： Ishibashi, Akihiko , Tsujimura, Ayumu , Hasegawa, Yoshiaki , Otsuka, Nobuyuki , Sugahara, Gaku , Miyanaga, Ryoko , Shimamoto, Toshitaka , Harafuji, Kenji , Ban, Yuzaburoji , Ohnaka, Kiyoshi
CPC分类号： H01L33/007 , B82Y20/00 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L21/0265 , H01L33/32 , H01S5/22 , H01S5/3063 , H01S5/3215 , H01S5/3216 , H01S5/34333 , H01S2304/04 , H01S2304/12
摘要： The method for fabricating a nitride semiconductor of the present invention includes the steps of: (1) growing a first semiconductor layer made of a first group III nitride over a substrate by supplying a first group III source and a group V source containing nitrogen; and (2) growing a second semiconductor layer made of a second group III nitride on the first semiconductor layer by supplying a second group III source and a group V source containing nitrogen. At least one of the steps (1) and (2) includes the step of supplying a p-type dopant over the substrate, and an area near the interface between the first semiconductor layer and the second semiconductor layer is grown so that the density of the p-type dopant locally increases.
摘要翻译： 用于制造本发明的氮化物半导体的制造方法包括以下步骤：（1）生长通过在由第一III族氮化物衬底的第一半导体层供给的第一III族原料和含有氮的V族源; 和（2）生长通过提供一个第二III族原料和含有氮的V族原料制成的第二III族氮化物的第一半导体层上的第二半导体层。 至少以下步骤：（1）和（2）包括供应在所述衬底的p型掺杂剂的步骤，和在所述第一半导体层和第二半导体层之间的界面附近区域生长所以没有的密度一个 p型掺杂剂局部增加。
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公开(公告)号：EP1098300A1
公开(公告)日：2001-05-09
申请号：EP00127273.1
申请日：1998-01-16
CPC分类号： B82Y20/00 , G11B7/126 , G11B7/127 , G11B7/1381 , G11B7/24085 , H01S5/0211 , H01S5/0213 , H01S5/028 , H01S5/1064 , H01S5/125 , H01S5/22 , H01S5/2231 , H01S5/343 , H01S5/34333 , H01S5/347
摘要： Laser light emitted from the wavelength-locked GaN semiconductor laser is collimated through a collimation lens, led through a polarization beam splitter and a 1/4 wavelength plate, and converged by a focus lens so as to be radiated on pits formed in an optical disk medium. The signal light from the optical disk medium is collimated by the focus lens, and has its polarization direction turned by the 1/4 wavelength plate by 90° relative to its polarization direction before being returned from the optical disk medium. As a result, the signal light is reflected from the polarization beam splitter so as to be converged on the optical detector by the focus lens.
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10.发明公开Optical disk recording/reproducing method and apparatus 审中-公开Aufzeichnungs- und Wiedergabeverfahren und -vorrichtungfüreine optische Platte
公开(公告)号：EP0952574A1
公开(公告)日：1999-10-27
申请号：EP99107567.2
申请日：1999-04-15
发明人： Kume, Masahiro , Ban, Yazuburo , Kidoguchi, Isao , Kamiyama, Satoshi , Tsujimura, Ayumu , Ishibashi, Akihiko , Hasegawa, Yoshiaki , Miyanaga, Ryoko
CPC分类号： G11B7/126 , G11B7/005 , G11B7/128 , G11B7/135 , G11B7/1369 , G11B11/10515 , G11B11/10543
摘要： Between a semiconductor laser diode (12) and an optical disk (11), a collimator lens (13) for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter (14) for attenuating the collimated beam having passed through the collimator lens, and a beam splitter (15) for splitting reflected light from the optical disk are disposed. In addition, a collecting lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk (11) is further disposed.
摘要翻译： 在半导体激光二极管（12）和光盘（11）之间，用于准直从半导体激光二极管输出的激光束的准直透镜（13），用于衰减经过的准直光束的液晶光学快门（14） 准直透镜和用于分离来自光盘的反射光的分束器（15）。 此外，还设置有用于将由准直透镜获得的准直光束收集在光盘（11）的数据保持表面上的收集透镜。
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