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    Semiconductor laser device
    5.
    发明公开
    Semiconductor laser device 有权
    半导体激光装置

    公开(公告)号：EP0952645A2

    公开(公告)日：1999-10-27

    申请号：EP99107985.6

    申请日：1999-04-22

    申请人： Matsushita Electric Industrial Co., Ltd.

    发明人： Kamiyama, Satoshi ,  Kume, Masahiro ,  Miyanaga, Ryoko ,  Kidoguchi, Isao ,  Ban, Yuzaburo ,  Tsujimura, Ayumu ,  Hasegawa, Yoshiaki ,  Ishibashi, Akihiko

    IPC分类号： H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/343 ,  H01S5/34333

    摘要： A GaN buffer layer (12) and an Si-doped n-type GaN contact layer (13) are formed in this order on a sapphire substrate (11). An n-type Al 0.3 Ga 0.7 N cladding layer (14), an n-type Al 0.25 Ga 0.75 N optical guide layer (15), a multi-quantum well active layer (16), in which Al 0.2 Ga 0.8 N well layers and Al 0.25 Ga 0.75 N barrier layers are alternately stacked, an Mg-doped p-type Al 0.25 Ga 0.75 N optical guide layer (17), a p-type Al 0.4 Ga 0.6 N 0.98 P 0.02 cladding layer (18) and a p-type GaN contact layer (19) are stacked in this order on an active region on the upper surface of the n-type contact layer.

    摘要翻译： 在蓝宝石衬底（11）上依次形成GaN缓冲层（12）和Si掺杂的n型GaN接触层（13）。 一种n型Al0.3Ga0.7N包层（14），n型Al0.25Ga0.75N光导层（15），多量子阱有源层（16），其中Al0.2Ga0.8N阱 Mg掺杂的p型Al 0.25 Ga 0.75 N光导层17，p型Al 0.4 Ga 0.6 N 0.98 P 0.02包层（18）和Al 0.25 Ga 0.75 N阻挡层交替堆叠， 和p型GaN接触层（19）以此顺序堆叠在n型接触层的上表面上的有源区上。

    A semiconductor laser and a method for producing the same
    6.
    发明公开
    A semiconductor laser and a method for producing the same 失效
    一种半导体激光器及其制造方法

    公开(公告)号：EP0579244A3

    公开(公告)日：1994-02-09

    申请号：EP93111443.3

    申请日：1993-07-16

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Kidoguchi, Isao ,  Kamiyama, Satoshi ,  Ohnaka, Kiyoshi

    IPC分类号： H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/1039 ,  H01S5/204 ,  H01S5/205 ,  H01S5/2206 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/3211 ,  H01S5/32325

    摘要： A semiconductor laser including a semiconductor substrate and a multilayer structure formed upon the semiconductor substrate, the multilayer structure including an active layer, a pair of cladding layers between which the active layer is interposed, and a current confinement layer for injecting a current into a stripe-shaped predetermined region of the active layer. The current confinement layer comprises a first current blocking layer formed in regions thereof excluding a region corresponding to the predetermined region of the active layer. The first current blocking layer has a refractive index higher than a refractive index of the pair of cladding layers and an energy band gap larger than an energy band gap of the active layer.

    摘要翻译： 一种半导体激光器，包括半导体衬底和形成在所述半导体衬底上的多层结构，所述多层结构包括有源层，在所述有源层插入其间的一对包层以及用于将电流注入到条带中的电流限制层 形活性层的预定区域。 电流限制层包括形成在除了对应于有源层的预定区域的区域之外的区域中的第一电流阻挡层。 第一电流阻挡层具有比一对包层的折射率高的折射率和比有源层的能带隙大的能带隙。

    Method of manufacturing group III nitride substrate
    8.
    发明公开
    Method of manufacturing group III nitride substrate 审中-公开
    赫尔斯特朗·赫尔斯特伦（Gravpe-III-Nitrid-Substrats）

    公开(公告)号：EP1439572A2

    公开(公告)日：2004-07-21

    申请号：EP04250264.1

    申请日：2004-01-20

    申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

    发明人： Kitaoka, Yasuo ,  Kidoguchi, Isao ,  Minemoto,Hisashi ,  Ishibashi, Akihiko

    IPC分类号： H01L21/208 ,  H01L21/78

    CPC分类号： C30B25/02 ,  C30B9/00 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02625 ,  H01L21/02642 ,  H01L21/0265 ,  H01L33/007

    摘要： The present invention provides a manufacturing method that makes it possible to manufacture a substrate that is formed of high-quality Group III nitride crystals alone and has less warping. A Group III nitride layer (a seed layer 12 and a selective growth layer 15) including gaps is formed on a substrate (a sapphire substrate 11). In an atmosphere containing nitrogen, the surface of the Group III nitride layer is brought into contact with a melt containing alkali metal and at least one Group III element selected from gallium, aluminum, and indium, and thereby the at least one Group III element and the nitrogen are made to react with each other to grow Group III nitride crystals (GaN crystals 16) on the Group III nitride layer. Thereafter, a part including the substrate and a part including the Group III nitride crystals are separated from each other in the vicinities of the gaps.

    摘要翻译： 本发明提供一种制造方法，其可以单独制造由高质量III族氮化物晶体形成的基板，并且具有较小的翘曲。 在基板（蓝宝石基板11）上形成包括间隙的III族氮化物层（种子层12和选择生长层15）。 在含氮的气氛中，使III族氮化物层的表面与含有碱金属和至少一种选自镓，铝和铟的III族元素的熔体接触，从而使至少一种III族元素和 使氮彼此反应以在III族氮化物层上生长III族氮化物晶体（GaN晶体16）。 此后，包括基板的部分和包含III族氮化物晶体的部分在间隙附近彼此分离。