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公开(公告)号：EP1473781A2
公开(公告)日：2004-11-03
申请号：EP04016420.4
申请日：1995-07-20
发明人： Kidoguchi, Isao , Adachi, Hideto , Ishibashi, Akihiko , Ohnaka, Kiyoshi , Ban, Yuzaburo , Kubo, Minoru
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/3086 , H01S5/32341 , H01S5/327
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga 1-x In x N (0 ≤ x ≤ 0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译： 一种具有双异质结构的半导体发光器件，包括：由掺杂有p型杂质和n型杂质的Ga1-xInxN（0≤x≤0.3）制成的有源层; 以及设置为夹住有源层的第一和第二包层。
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2.发明公开Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same 有权氮化物半导体，氮化物半导体装置中，发光半导体器件及其制造方法
公开(公告)号：EP1104031A3
公开(公告)日：2005-10-12
申请号：EP00124829.3
申请日：2000-11-14
发明人： Kidoguchi, Isao , Ishibashi, Akihiko , Miyanaga, Ryoko , Sugahara, Gaku , Suzuki, Masakatsu , Kume, Masahiro , Ban, Yuzaburo , Morita, Kiyoyuki , Tsujimura, Ayumu , Hasegawa, Yoshiaki
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/007 , H01L33/405 , H01L33/46 , H01S5/2077 , H01S5/2201 , H01S5/32341 , H01S5/4031 , H01S2304/00
摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al u Ga v In w N, wherein 0 ≦ u, v, w ≦ 1 and u + v + w = 1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of Al x Ga y In z N, wherein 0 ≦ x, y, z ≦ 1 and x + y + z = 1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
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公开(公告)号：EP0952645B1
公开(公告)日：2004-12-15
申请号：EP99107985.6
申请日：1999-04-22
发明人： Kamiyama, Satoshi , Kume, Masahiro , Miyanaga, Ryoko , Kidoguchi, Isao , Ban, Yuzaburo , Tsujimura, Ayumu , Hasegawa, Yoshiaki , Ishibashi, Akihiko
IPC分类号： H01S5/32
CPC分类号： B82Y20/00 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34333
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公开(公告)号：EP0952645A3
公开(公告)日：2001-03-21
申请号：EP99107985.6
申请日：1999-04-22
发明人： Kamiyama, Satoshi , Kume, Masahiro , Miyanaga, Ryoko , Kidoguchi, Isao , Ban, Yuzaburo , Tsujimura, Ayumu , Hasegawa, Yoshiaki , Ishibashi, Akihiko
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34333
摘要： A GaN buffer layer (12) and an Si-doped n-type GaN contact layer (13) are formed in this order on a sapphire substrate (11). An n-type Al 0.3 Ga 0.7 N cladding layer (14), an n-type Al 0.25 Ga 0.75 N optical guide layer (15), a multi-quantum well active layer (16), in which Al 0.2 Ga 0.8 N well layers and Al 0.25 Ga 0.75 N barrier layers are alternately stacked, an Mg-doped p-type Al 0.25 Ga 0.75 N optical guide layer (17), a p-type Al 0.4 Ga 0.6 N 0.98 P 0.02 cladding layer (18) and a p-type GaN contact layer (19) are stacked in this order on an active region on the upper surface of the n-type contact layer.
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公开(公告)号：EP1473781A3
公开(公告)日：2007-02-21
申请号：EP04016420.4
申请日：1995-07-20
发明人： Kidoguchi, Isao , Adachi, Hideto , Ishibashi, Akihiko , Ohnaka, Kiyoshi , Ban, Yuzaburo , Kubo, Minoru
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/3086 , H01S5/32341 , H01S5/327
摘要： Method for producing a semiconductor light-emitting device comprising the step of forming a semiconductor structure having a projected portion and a concave portion and mounting the semiconductor structure on a heat sink.
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6.发明公开Nitride semiconductor, nitride semiconductor device, semiconductor light emiting device and method of fabricating the same 有权Nitrid-Halbleiterlaserdiode和deren Herstellungsverfahren
公开(公告)号：EP1104031A2
公开(公告)日：2001-05-30
申请号：EP00124829.3
申请日：2000-11-14
发明人： Kidoguchi, Isao , Ishibashi, Akihiko , Miyanaga, Ryoko , Sugahara, Gaku , Suzuki, Masakatsu , Kume, Masahiro , Ban, Yuzaburo , Morita, Kiyoyuki , Tsujimura, Ayumu , Hasegawa, Yoshiaki
CPC分类号： H01L33/12 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L33/007 , H01L33/405 , H01L33/46 , H01S5/2077 , H01S5/2201 , H01S5/32341 , H01S5/4031 , H01S2304/00
摘要： The method of fabricating a nitride semiconductor of this invention includes the steps of forming, on a substrate, a first nitride semiconductor layer of Al u Ga v In w N, wherein 0 ≦ u, v, w ≦ 1 and u + v + w = 1; forming, in an upper portion of the first nitride semiconductor layer, plural convexes extending at intervals along a substrate surface direction; forming a mask film for covering bottoms of recesses formed between the convexes adjacent to each other; and growing, on the first nitride semiconductor layer, a second nitride semiconductor layer of Al x Ga y In z N, wherein 0 ≦ x, y, z ≦ 1 and x + y + z = 1, by using, as a seed crystal, C planes corresponding to top faces of the convexes exposed from the mask film.
摘要翻译： 制造本发明的氮化物半导体的方法包括以下步骤：在衬底上形成AluGavInwN的第一氮化物半导体层，其中0≤v，w 1，u + v + w = 1 ; 在所述第一氮化物半导体层的上部形成沿着基板表面方向间隔地延伸的多个凸部; 形成用于覆盖形成在彼此相邻的凸起之间的凹部的底部的掩模膜; 并且在第一氮化物半导体层上生长Al x Ga y In z N的第二氮化物半导体层，其中0≤x，y，z 1，x + y + z = 1，通过使用晶种C 对应于从掩模膜暴露的凸起的顶面的平面。
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公开(公告)号：EP0952645A2
公开(公告)日：1999-10-27
申请号：EP99107985.6
申请日：1999-04-22
发明人： Kamiyama, Satoshi , Kume, Masahiro , Miyanaga, Ryoko , Kidoguchi, Isao , Ban, Yuzaburo , Tsujimura, Ayumu , Hasegawa, Yoshiaki , Ishibashi, Akihiko
IPC分类号： H01S3/19
CPC分类号： B82Y20/00 , H01S5/3054 , H01S5/3063 , H01S5/343 , H01S5/34333
摘要： A GaN buffer layer (12) and an Si-doped n-type GaN contact layer (13) are formed in this order on a sapphire substrate (11). An n-type Al 0.3 Ga 0.7 N cladding layer (14), an n-type Al 0.25 Ga 0.75 N optical guide layer (15), a multi-quantum well active layer (16), in which Al 0.2 Ga 0.8 N well layers and Al 0.25 Ga 0.75 N barrier layers are alternately stacked, an Mg-doped p-type Al 0.25 Ga 0.75 N optical guide layer (17), a p-type Al 0.4 Ga 0.6 N 0.98 P 0.02 cladding layer (18) and a p-type GaN contact layer (19) are stacked in this order on an active region on the upper surface of the n-type contact layer.
摘要翻译： 在蓝宝石衬底（11）上依次形成GaN缓冲层（12）和Si掺杂的n型GaN接触层（13）。 一种n型Al0.3Ga0.7N包层（14），n型Al0.25Ga0.75N光导层（15），多量子阱有源层（16），其中Al0.2Ga0.8N阱 Mg掺杂的p型Al 0.25 Ga 0.75 N光导层17，p型Al 0.4 Ga 0.6 N 0.98 P 0.02包层（18）和Al 0.25 Ga 0.75 N阻挡层交替堆叠， 和p型GaN接触层（19）以此顺序堆叠在n型接触层的上表面上的有源区上。
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