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    METHOD FOR ESTIMATING PARAMETERS OF A JUNCTION OF A POWER SEMI-CONDUCTOR AND MONITORING SYSTEM FOR IMPLEMENTING SAID METHOD
    7.
    发明公开
    METHOD FOR ESTIMATING PARAMETERS OF A JUNCTION OF A POWER SEMI-CONDUCTOR AND MONITORING SYSTEM FOR IMPLEMENTING SAID METHOD 审中-公开

    公开(公告)号：EP3839528A1

    公开(公告)日：2021-06-23

    申请号：EP19306719.6

    申请日：2019-12-20

    申请人： Mitsubishi Electric R&D Centre Europe B.V. ,  Mitsubishi Electric Corporation

    发明人： DEGRENNE, Nicolas ,  VOYER, Nicolas ,  MOLLOV, Stefan

    IPC分类号： G01R31/26 ,  G01R31/40 ,  G01R31/28 ,  G01K7/01 ,  G01K15/00

    摘要： Method for estimating parameters of a junction of a power semi-conductor element comprising:
    - Detecting at least one stable on-line operating condition through measurements (2, 3, 4) of Von, Ion, Tc on a semi-conductor module (1) where Ion is a current for which the on-state voltage Von of the semi-conductor is sensitive to the temperature and Tc is the temperature of the casing of said semi-conductor element;
    - Measuring and storing at least one parameter set Von, Ion, Tc of said at least one stable operating condition;
    - in a calculating unit, providing calculations for minimizing the error between a junction temperature estimation Tj of an electrical model Tj=F(Von, Ion, θelec) comprising a first set of unknown parameters θelec and another junction temperature estimation Tjmod of a loss/thermal model Tj=G(Ion, Tc, θmod) comprising a second set of unknown parameters θmod and obtaining at least one set of parameters θelec and at least one parameter θmod providing minimization of said error;
    - providing the calculated value of Tj with at least one of the calculated parameters sets θelec and/or θmod and the measured Von, Ion, Tc;
    - Storing the at least one parameters set θelec and/or θmod and/or Tj.

    ELECTRICALLY POWER ASSEMBLY WITH THICK ELECTRICALLY CONDUCTIVE LAYERS
    8.
    发明公开
    ELECTRICALLY POWER ASSEMBLY WITH THICK ELECTRICALLY CONDUCTIVE LAYERS 审中-公开

    公开(公告)号：EP3716326A1

    公开(公告)日：2020-09-30

    申请号：EP19164827.8

    申请日：2019-03-25

    申请人： Mitsubishi Electric R&D Centre Europe B.V. ,  Mitsubishi Electric Corporation

    发明人： MRAD, Roberto ,  MOLLOV, Stefan

    IPC分类号： H01L23/538 ,  H05K1/18 ,  H05K3/46 ,  H01L25/07 ,  H05K1/02

    摘要： The present invention relates to an electrical power assembly (100), comprising:
    - at least one multilayer base structure (10), at least one power device embedded in the at least one multilayer base structure, an internal electrically conductive layer (40, 40') positioned on each side of the multilayer base structure, the internal electrically conductive layer being connected to a respective electrical contact of the power device through connections (12, 12') arranged in the multilayer base structure;
    - at least one external electrically conductive layers (60, 60') positioned on each side of the base structure (10), each external electrically conductive layer (60, 60') comprising at least one pre-drilled through hole,
    - at least one internal electrically insulating layer (50, 50') positioned between the internal electrically conductive layer (40, 40') of the base structure (10) and a respective external electrically conductive layer (60, 60'),
    - at least one hole arranged in the internal electrically insulating layer (50, 50') and the external electrically conductive layer (60, 60'), a portion of each hole being formed by the pre-drilled through hole,
    - the at least one hole being filled with electrically conductive material (63) to form external conductive vias (64, 64') to connect the internal electrically conductive layer (40, 40') to the respective external electrically conductive layer (60, 60').