公开(公告)号：EP2600395A4

公开(公告)日：2016-05-25

申请号：EP11812474

申请日：2011-07-26

申请人： NISSAN CHEMICAL IND LTD

发明人： HIROI YOSHIOMI ,  MAEDA SHINICHI

IPC分类号： H01L21/368 ,  H01L29/786

CPC分类号： H01L29/247 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02628 ,  H01L29/78693

摘要： The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.

公开(公告)号：EP2147948A4

公开(公告)日：2013-11-20

申请号：EP08752050

申请日：2008-04-24

申请人： NISSAN CHEMICAL IND LTD

发明人： MAEDA SHINICHI ,  IINUMA YOSUKE

IPC分类号： C08G73/10 ,  G03F7/004 ,  H01L21/027

CPC分类号： C09D179/08 ,  B05D3/067 ,  C08G73/1039 ,  C08G73/105 ,  C08G73/1064 ,  C08G73/1075 ,  C08G73/1078 ,  G03F7/11

摘要： There is provided a polyimide precursor which can alter the hydrophilicity/hydrophobicity of the surface of a cured film formed readily even by a low level of ultraviolet ray irradiation; and a polyimide produced from the polyimide precursor. The polyimide precursor having a structure represented by the following formula (1): (where A represents a tetravalent organic group; B represents a bivalent organic group having a thiol ester bond in its main chain; R 1 and R 2 independently represent a hydrogen atom or a univalent organic group; and n represents a natural number).

公开(公告)号：EP3171394A4

公开(公告)日：2018-02-14

申请号：EP15822209

申请日：2015-07-14

申请人： NISSAN CHEMICAL IND LTD

发明人： MAEDA SHINICHI

IPC分类号： H01L29/786 ,  C01G15/00 ,  C09D1/00 ,  C09D5/24 ,  H01L21/02 ,  H01L21/368 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L29/7869 ,  C01G15/00 ,  C01P2006/40 ,  C09D1/00 ,  C09D5/24 ,  H01L21/02565 ,  H01L21/02623 ,  H01L21/02664 ,  H01L29/24 ,  H01L29/66969

摘要： Provided is a composition for forming a metal oxide semiconductor that includes a solvent represented by general formula [1] and an inorganic metal salt. (In the formula, R1 represents a linear or branched C2-3 alkylene group, and R2 represents a linear or branched C1-3 alkyl group.)

公开(公告)号：EP2028683A4

公开(公告)日：2011-09-28

申请号：EP07743986

申请日：2007-05-23

申请人： NISSAN CHEMICAL IND LTD

发明人： MAEDA SHINICHI ,  IINUMA YOSUKE

IPC分类号： H01L21/336 ,  H01L21/312 ,  H01L29/786 ,  H01L51/05 ,  H01L51/30

CPC分类号： H01L51/052 ,  H01L51/0001 ,  H01L51/0003 ,  H01L51/0036 ,  H01L51/0541 ,  H01L51/0545

摘要： To provide a coating fluid for a gate insulating film, which can be baked at a low temperature of at most 180°C; a gate insulating film having excellent solvent resistance and further having good characteristics in e.g. specific resistance or semiconductor mobility; and an organic transistor employing the gate insulating film. A coating fluid for a gate insulating film, which comprises a polyimide obtainable by cyclodehydration of a polyamic acid having repeating units of a specific structure, a gate insulating film employing the coating fluid, and the organic transistor employing the gate insulating film.

摘要翻译： 提供可在最低180℃的低温下烘烤的栅绝缘膜的涂布液; 具有优异的耐溶剂性并且在其中具有良好特性的栅极绝缘膜。 电阻或半导体迁移率; 以及采用该栅极绝缘膜的有机晶体管。 一种用于栅极绝缘膜的涂布液，其包含通过使具有特定结构的重复单元的聚酰胺酸的环化脱水，使用该涂布液的栅极绝缘膜和使用该栅极绝缘膜的有机晶体管获得的聚酰亚胺。

公开(公告)号：EP1728827A4

公开(公告)日：2010-02-03

申请号：EP05727092

申请日：2005-03-24

申请人： NISSAN CHEMICAL IND LTD

发明人： ONO GO ,  KATO TAKU ,  MAEDA SHINICHI

IPC分类号： C08L79/00 ,  C08L79/08 ,  C09D179/02 ,  C09D179/08 ,  C09K11/06 ,  H01L51/00 ,  H01L51/50 ,  H05B33/14 ,  H05B33/22

CPC分类号： H01L51/0035 ,  C09D179/02 ,  C09D179/08 ,  C09K11/06 ,  C09K2211/1425 ,  C09K2211/1433 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0081 ,  H01L51/0094 ,  H01L51/5048 ,  H01L2251/308

公开(公告)号：EP2053639A4

公开(公告)日：2013-01-16

申请号：EP07791969

申请日：2007-08-03

申请人： SUMITOMO ELECTRIC INDUSTRIES ,  NISSAN CHEMICAL IND LTD

发明人： MAEDA SHINICHI ,  ONO GO ,  OKADA ISSEI ,  SHIMODA KOHEI

IPC分类号： H01L21/288 ,  H01L21/336 ,  H01L29/786 ,  H01L51/00 ,  H01L51/05

CPC分类号： H01L51/052 ,  H01L51/0022 ,  H01L51/0545

公开(公告)号：EP1898451A4

公开(公告)日：2010-09-22

申请号：EP06766922

申请日：2006-06-19

申请人： NISSAN CHEMICAL IND LTD

发明人： MAEDA SHINICHI ,  ONO GO

IPC分类号： H01L21/28 ,  C08G73/10 ,  G03F7/038 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L51/0035 ,  C08G73/10 ,  G03F7/0387 ,  H01L21/28 ,  H01L51/0012 ,  H01L51/0021 ,  Y10T428/24479

公开(公告)号：EP2157614A4

公开(公告)日：2010-06-23

申请号：EP08776934

申请日：2008-05-28

申请人： NISSAN CHEMICAL IND LTD

发明人： MAEDA SHINICHI ,  KISHIOKA TAKAHIRO

IPC分类号： C08G59/26 ,  C08G73/06 ,  H01L51/05

CPC分类号： H01L51/052 ,  C08G59/182 ,  C08G73/0638 ,  C08G73/0644 ,  C08G73/065 ,  C08G73/0655 ,  C08L79/04 ,  H01L21/312 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7869 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0097 ,  H01L51/0529 ,  H01L51/102

摘要： There is provided a novel gate insulating film forming meterial in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor.