公开(公告)号：EP2357667A3

公开(公告)日：2012-01-04

申请号：EP10195305.7

申请日：2010-12-16

申请人： NXP B.V.

发明人： Besling, Willem ,  Bakkeer, Theodorus Wilhelmus ,  Lamy, Yann ,  Kochupurackai, Jinesh ,  Roozeboom, Freddy

IPC分类号： H01L23/64 ,  H01L23/66 ,  H01L21/02

CPC分类号： H01L23/66 ,  H01L23/642 ,  H01L24/48 ,  H01L24/49 ,  H01L28/92 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A variety of circuits, methods and devices are implemented for radiofrequency amplifiers. According to one such implementation, a radiofrequency amplifier circuit is implemented in a SMD package. The circuit amplifies a radiofrequency signal having a base-band portion and a plurality of carrier signals frequency-spaced larger than the base-band bandwidth. The circuit includes a radiofrequency transistor connected to a circuit output having a parasitic output capacitance. The source-drain terminal is electrically connected to the circuit output. An internal shunt inductor provides compensation for the parasitic output capacitance. A high-density capacitor is connected between the internal shunt inductor and a circuit ground. The high-density capacitor has a terminal with a surface area can be at least ten times that of a corresponding planar surface.

公开(公告)号：EP2357667A2

公开(公告)日：2011-08-17

申请号：EP10195305.7

申请日：2010-12-16

申请人： NXP B.V.

发明人： Besling, Willem ,  Bakkeer, Theodorus Wilhelmus ,  Lamy, Yann ,  Kochupurackai, Jinesh ,  Roozeboom, Freddy

IPC分类号： H01L23/64 ,  H01L23/66

CPC分类号： H01L23/66 ,  H01L23/642 ,  H01L24/48 ,  H01L24/49 ,  H01L28/92 ,  H01L2223/6611 ,  H01L2223/6644 ,  H01L2223/6655 ,  H01L2224/05599 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A variety of circuits, methods and devices are implemented for radiofrequency amplifiers. According to one such implementation, a radiofrequency amplifier circuit is implemented in a SMD package. The circuit amplifies a radiofrequency signal having a base-band portion and a plurality of carrier signals frequency-spaced larger than the base-band bandwidth. The circuit includes a radiofrequency transistor connected to a circuit output having a parasitic output capacitance. The source-drain terminal is electrically connected to the circuit output. An internal shunt inductor provides compensation for the parasitic output capacitance. A high-density capacitor is connected between the internal shunt inductor and a circuit ground. The high-density capacitor has a terminal with a surface area can be at least ten times that of a corresponding planar surface.

摘要翻译： 为射频放大器实现了各种电路，方法和设备。 根据一种这样的实施方式，在SMD封装中实现射频放大器电路。 该电路放大具有基带频带部分和频率大于基带带宽的多个载波信号的射频信号。 电路包括连接到具有寄生输出电容的电路输出的射频晶体管。 源极 - 漏极端子电连接到电路输出端。 内部并联电感器为寄生输出电容提供补偿。 内部并联电感和电路接地之间连接有高密度电容器。 高密度电容器具有表面积可以至少是相应平面的十倍的端子。