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公开(公告)号：EP1664924B1
公开(公告)日：2012-05-02
申请号：EP04764051.1
申请日：2004-08-12
申请人： NaWoTec GmbH
IPC分类号： G03F1/74 , H01J37/305 , C23F4/00 , H01L21/768 , H01L21/3213
CPC分类号： G03F1/74 , H01J37/3056 , H01J2237/31744 , H01L21/31122 , H01L21/32135
摘要： The present invention concerns a method for etching a chromium layer in a vacuum chamber with the method steps of introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and introducing an oxygen containing compound into the vacuum chamber. According to a further aspect, the present invention relates to a further method for the highly resolved removal of a layer out of metal and/or metal oxide which is arranged on an isolator or a substrate having poor thermal conductivity, comprising the method steps of arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam is guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer is performed without the supply of reaction gases into the vacuum chamber.
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公开(公告)号：EP0979414B1
公开(公告)日：2006-08-30
申请号：EP99903611.4
申请日：1999-01-08
申请人： NaWoTec GmbH
发明人： KOOPS, Hans, W., P.
CPC分类号： G01Q30/02 , B33Y80/00 , G01Q60/02 , G01Q60/16 , G01Q60/22 , G01Q60/38 , G01Q60/48 , G01Q60/54 , G01Q70/10 , G01R1/06711 , Y10S977/849 , Y10S977/86 , Y10S977/866 , Y10S977/869 , Y10S977/874 , Y10S977/901
摘要： According to the invention, a group of probes in a test head for a scanning probe microscope for testing integrated electronic circuits without contact is placed on a support, said probes having been manufactured by three-dimensional additive lithography. The probes are directed at a central point above the probe group. The conductive probes and the foot end of the capacitive probe are connected to conductor structures on the base for connection to a measuring circuit.
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3.发明公开
公开(公告)号：EP1664924A2
公开(公告)日：2006-06-07
申请号：EP04764051.1
申请日：2004-08-12
申请人： NaWoTec GmbH
IPC分类号： G03F1/00 , H01J37/305 , C23F4/00 , H01L21/768
CPC分类号： G03F1/74 , H01J37/3056 , H01J2237/31744 , H01L21/31122 , H01L21/32135
摘要： The present invention concerns a method for etching a chromium layer in a vacuum chamber with the method steps of introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and introducing an oxygen containing compound into the vacuum chamber. According to a further aspect, the present invention relates to a further method for the highly resolved removal of a layer out of metal and/or metal oxide which is arranged on an isolator or a substrate having poor thermal conductivity, comprising the method steps of arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam is guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer is performed without the supply of reaction gases into the vacuum chamber.
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公开(公告)号：EP1330833B1
公开(公告)日：2007-04-18
申请号：EP01974137.0
申请日：2001-08-08
申请人： NaWoTec GmbH
CPC分类号： B82Y10/00 , H01J49/44 , H01L29/7613
摘要： Inordinate localised systems are used at room temperature in a novel device in the form of an electron spectrometer for utilising single-electron electronic applications. Said electron spectrometer device consists of a nanocrystalline metal or a nanocrystalline semiconductor material used as a conductor strip connection in the form of an inlet or an outlet for single-electron electronic components and circuits consisting of lithographically produced quantum dots. The resulting single-electron electronic device consisting of quantum dots is supplied with energetically very sharply defined electrons. Said device can thus be operated at room temperature, undisturbed by phonons.
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公开(公告)号：EP1269155B1
公开(公告)日：2007-04-25
申请号：EP01936137.7
申请日：2001-03-24
申请人： NaWoTec GmbH
CPC分类号： G01N21/4788 , G01N21/41
摘要： According to the inventive method, the substance for which the index of refraction is to be determined is first prepared in the form of a theoretically determinable scattering arrangement or diffraction arrangement. Two or more diffraction orders are then established for the purpose of producing at least one intensity ratio. At least one intensity distribution is produced by irradiating the scattering arrangement with a light beam with a defined shape. The intensity ratio is then produced using the diffraction orders of the intensity distribution. At least part of a characteristic curve which represents the dependency of the intensity ratio on the index of refraction and which can be used to allocate the corresponding index of refraction to the intensity ratio that is produced is also determined.
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公开(公告)号：EP1186079B1
公开(公告)日：2005-02-02
申请号：EP00934998.6
申请日：2000-05-10
申请人： NaWoTec GmbH
IPC分类号： H01S4/00
CPC分类号： H01S3/0903 , H01J3/021 , H01J25/00
摘要： The invention relates to a miniaturized terahertz radiation source based on the Smith-Purcell effect. According to the invention, an energy-rich electron beam is emitted from a focused electron source at a defined distance across a metal grid of transversal grid rods so that oscillating image charges emit electromagnetic waves of a wavelength that can be adjusted on the basis of the periodicity of the webs and the electron speed. The elements of the radiation source such as the field emitter (1), the electrostatic lens (4), the beam deflector (5), the metal grid (7) and a second anode (8) are located on a semiconductor chip integrated by means of additive nanolithography methods. The field electron source is configured as a highly conductive wire with a stabilizing external resistor that is produced by additive nanolithography methods and protrudes from the surface. Said wire is produced by computer-controlled deposition lithography as a self-contained straight or arcuate structure. The base material, in its surface, has a track structure for the electrical connections and links (2) with controlled supply terminals (3) for supplying the field emitter tips (1), the lens (4) and the control electrodes (5, 8) with power. The terahertz radiation source according to the invention is powerful and can be used as a modular component irrespective of its spatial arrangement.
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7.发明公开MATERIALBEARBEITUNGSSYSTEM, MATERIALBEARBEITUNGSVERFAHREN UND GASZUFUEHRUNG HIERFUER 审中-公开材料科学与工程学院，材料学院，高分子材料学院
公开(公告)号：EP1479091A2
公开(公告)日：2004-11-24
申请号：EP03742580.8
申请日：2003-02-25
IPC分类号： H01J37/305 , H01J37/301
CPC分类号： H01J37/18 , H01J37/3056 , H01J2237/006 , H01J2237/162 , H01J2237/166 , H01J2237/31744
摘要： The invention relates to a material treating system for treating a work piece (3). The material treatment is carried out by supplying a reaction gas and energetic radiation to induce the reaction gas in a surrounding of a section of the work piece to be treated. The radiation is preferably provided by an electron microscope (15). An objective lens (27) of the electron microscope is disposed preferably between a detector (41) thereof and the work piece. A gas supply system (53) of the material treating system is provided with a valve disposed at a distance from the treating section, and a gas volume between the valve and a location of emergence (59) of the reaction gas is small. The gas supply system is further provided with a temperature-adjusted, especially cooled reservoir for receiving a starting material for the reaction gas.
摘要翻译： 前体气体供应由管（65）组成，每个管（65）包含在其出口端具有较小内径的可移动阀和端套管（57）。 通过套管界定的气体空间体积，出口端（59）处的套管内径和关闭位置的阀对应于关系V c * A * l。 A是插管内径在其出口端的表面，l是套管出口端和阀门在关闭位置之间的距离，c恒定小于5 pref。 小于1.5。 包括用于使用气体供应装置的材料处理系统和处理工件的程序的独立权利要求。
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