公开(公告)号：EP3151268A2

公开(公告)日：2017-04-05

申请号：EP16002295.0

申请日：2010-01-20

申请人： Nichia Corporation

发明人： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver or silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver or silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 是（340 140，240）的表面上设置用于在其中银或氧化银（520，620，720）的半导体器件提供了一种基站（500，600，700）和氧化银的表面上的方法公开 的半导体元件（100，200，300）键合的，该方法包括在基体上布置的半导体元件（100，200，300）的步骤（500，600，700）检测没有氧化银（140，240， 340）设置在半导体元件（100，200,300）的表面上与设置在基座（500，600，700的表面上的银或氧化银（520，620，720）接触），暂时接合 半导体元件（100，200，300）和基部（500，600，700）通过施加到所述半导体元件（100，200，300）或所述基部（500，600,700）的压力或超声波振动，和 半导体元件（100，200，300）和基部（500，600，700）通过施加具有150至900℃的温度下对半导体元件的热永久地结合（100，200，300） 和所述基部（500，600，700）。 的暂时接合步骤和永久地结合的步骤可以同时进行。 永久接合的步骤可以在空气中或在氧气中进行，以环境，或在氮气环境中。 半导体元件（100，200，300）和基部（500，600，700）可以预先在150的临时粘结步骤之前被加热到900℃。 5至50MPa的压力可能暂时结合步骤之前施加。 半导体元件（100，200，300）可以是半导体发光元件。

公开(公告)号：EP3163601A3

公开(公告)日：2017-08-09

申请号：EP16002296.8

申请日：2010-01-20

申请人： Nichia Corporation

发明人： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver or silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver or silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied in the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 公开了一种用于制造半导体器件的方法，其中提供在基底（500,600,700）的表面上的氧化银（520,620,720）和设置在基底（500,600,700）上的银或氧化银（140,240,340） 的半导体元件（100,200,300）接合，所述方法包括以下步骤：在基底（500,600,700）上布置半导体元件（100,200,300），使得银或氧化银（140,130） 设置在所述半导体元件（100,200,300）的表面上的所述第一电极（240,240,340）与设置在所述基底（500,600,700）的表面上的氧化银（520,620,720）接触， 通过对所述半导体元件（100,200,300）或所述基座（500,600,700）施加压力或超声波振动来对所述半导体元件（100,200,300）和所述基座（500,600,700）进行加热，以及 通过向半导体元件（100,200,300）施加温度为150至900℃的热量来永久地结合半导体元件（100,200,300）和基座（500,600,700） 和底座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 永久结合的步骤可以在空气中或氧气环境中或在氮气环境中进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 在临时粘合的步骤中可以施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。

公开(公告)号：EP3163602A3

公开(公告)日：2017-08-09

申请号：EP16002297.6

申请日：2010-01-20

申请人： Nichia Corporation

发明人： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver (520, 620, 720) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a base (500, 600, 700) and silver (140, 240, 340) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method comprising the steps of arranging the semiconductor element (100, 200, 300) on the base (500, 600, 700) such that said silver (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with said silver (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700) in air or in an oxygen environment. The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 本发明公开了一种用于制造半导体器件的方法，其中通过银溅射，银气相沉积或镀银形成并设置在基底（500,600,700）和银（140,160）的表面上的银（520,620,720） （100,200,300）的表面上通过银溅射，银气相沉积或镀银形成的半导体元件（100,200,300）的方法包括以下步骤：将半导体元件（100,200,300） ）设置在所述基座（500,600,700）上，使得设置在所述半导体元件（100,200,300）的表面上的所述银（140,240,340）与所述银（520,620,720）接触， 设置在所述基座（500,600,700）的表面上，通过对所述半导体元件（500,600,700）施加压力或超声波振动来暂时接合所述半导体元件（100,200,300）和所述基座（500,600,700） （100,200,300）或所述基座（500,600,700）之间，并且永久地将所述半导体元件（100,200,300）和所述半导体元件 通过在空气中或在氧气环境中向半导体元件（100,200,300）和基座（500,600,700）施加具有150至900℃的温度的热量，从而在基座（500,600,700）上形成基座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 临时粘合步骤之前可施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。

公开(公告)号：EP3151268A3

公开(公告)日：2017-08-09

申请号：EP16002295.0

申请日：2010-01-20

申请人： Nichia Corporation

发明人： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC分类号： H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver or silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver or silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

摘要翻译： 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 公开了一种用于制造半导体器件的方法，其中在基体（500,600,700）的表面上提供的银或氧化银（520,620,720）和在表面上提供的氧化银（140,240,340） 的半导体元件（100,200,300）接合，所述方法包括以下步骤：在基座（500,600,700）上布置半导体元件（100,200,300），使得氧化银（140,240,340） 设置在半导体元件（100,200,300）的表面上的银或氧化银（520,620,720）与设置在基部（500,600,700）的表面上的银或氧化银（520,620,720）接触， 通过对所述半导体元件（100,200,300）或所述基座（500,600,700）施加压力或超声波振动来对所述半导体元件（100,200,300）和所述基座（500,600,700）进行加热，以及 通过向半导体元件（100,200,300）施加温度为150至900℃的热量来永久地结合半导体元件（100,200,300）和基座（500,600,700） 和底座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 永久结合的步骤可以在空气中或氧气环境中或在氮气环境中进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 临时粘合步骤之前可施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。