INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK
    4.
    发明公开
    INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK 审中-公开
    FOLIE AUS ANORGANISCHEM MATERIAL,FOTOMASKENROHLING UND VERFAHREN ZUR HERSTELLUNG EINER PHOTOMASKE

    公开(公告)号:EP3112934A2

    公开(公告)日:2017-01-04

    申请号:EP16176476.6

    申请日:2016-06-27

    IPC分类号: G03F1/54

    摘要: An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000 Ω/cm 2 when evaluated in terms of resistance values.

    摘要翻译: 含有浓度范围为0.1原子%以上且不高于11.5原子%的锡的无机材料膜消除了锡定位并形成颗粒的问题,结果是这些颗粒变成光学膜的缺陷。 根据本发明的用于通过溅射成膜并由含铬材料构成的用于光掩模坯料的无机材料膜包括具有导电性的遮光层,其中遮光层包含0.1原子%以上但不含 高于11.5原子%的锡和不高于15原子%的氧气。 氧浓度的下限例如为3原子%。 无机材料膜具有导电性,当根据电阻值进行评估时,其优选不高于5000Ω/ cm 2。

    STAMP COMPONENT FOR TRANSFERRING MICROSTRUCTURE

    公开(公告)号:EP4270457A1

    公开(公告)日:2023-11-01

    申请号:EP21910042.7

    申请日:2021-11-16

    IPC分类号: H01L21/677

    摘要: The present invention is a microstructure-transfer stamp component including a substrate and a silicone-based rubber film formed on the substrate, wherein a surface of the silicone-based rubber film facing away from the substrate has one or more recesses each being closed except for a surface opening. This provides a microstructure-transfer stamp component that can optimize temporary adhesive strength of the surface of the silicone-based rubber film stamp in a short period of time.

    INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK
    6.
    发明公开
    INORGANIC MATERIAL FILM, PHOTOMASK BLANK, AND METHOD FOR MANUFACTURING PHOTOMASK 审中-公开
    无机材料膜,照相底片和制造照相底片的方法

    公开(公告)号:EP3112934A3

    公开(公告)日:2017-02-08

    申请号:EP16176476.6

    申请日:2016-06-27

    IPC分类号: G03F1/54 G03F1/80

    摘要: An inorganic material film containing tin within the concentration range of 0.1 atomic percent or higher but no higher than 11.5 atomic percent eliminates the problem in which tin localizes and forms into particles, with the result that these particles turn into defects in an optical film. An inorganic material film for a photomask blank according to the present invention film-formed by sputtering and composed of a chromium-containing material includes a light-shielding layer having electrical conductivity, wherein the light-shielding layer contains 0.1 atomic percent or higher but no higher than 11.5 atomic percent of tin and no higher than 15 atomic percent of oxygen. The lower limit of oxygen concentration is, for example, 3 atomic percent. The inorganic material film has electrical conductivity, which is preferably no higher than 5000 Ω/cm 2 when evaluated in terms of resistance values.

    摘要翻译: 含有浓度范围为0.1原子%以上且11.5原子%以下的锡的无机材料膜消除了锡定位并形成粒子的问题,结果这些粒子在光学膜中变成缺陷。 根据本发明的用于溅射成膜并且由含铬材料构成的用于光掩模坯料的无机材料膜包括具有导电性的遮光层,其中遮光层含有0.1原子%或更高,但不包含 高于11.5原子百分比的锡和不高于15原子百分比的氧。 氧浓度的下限例如为3原子%。 无机材料膜具有导电率,当根据电阻值进行评估时,优选不高于5000Ω/ cm 2。