公开(公告)号：EP1652219B1

公开(公告)日：2013-12-18

申请号：EP04801839.4

申请日：2004-03-31

申请人： ROBERT BOSCH GMBH

发明人： LUTZ, Markus ,  PARTRIDGE, Aaron ,  KRONMUELLER, Silvia

IPC分类号： H01L21/00 ,  H01L29/82

CPC分类号： B81B3/0054 ,  B81B2203/0307 ,  B81C1/00126

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device having mechanical structures and anchors to secure the mechanical structures to the substrate. The anchors of the present invention are comprised of a material that is relatively unaffected by the release processes of the mechanical structures. In this regard, the etch release process are selective or preferential to the material(s) securing the mechanical structures in relation to the material comprising the anchors. Moreover, the anchors of the present invention are secured to the substrate in such a manner that removal of the insulation layer has little to no affect on the anchoring of the mechanical structures to the substrate.

公开(公告)号：EP2234917B1

公开(公告)日：2019-05-08

申请号：EP08862452.3

申请日：2008-10-20

申请人： Robert Bosch GmbH

发明人： REICHENBACH, Frank ,  LAERMER, Franz ,  KRONMUELLER, Silvia ,  SCHEURLE, Andreas

IPC分类号： B81C1/00

公开(公告)号：EP2036118B1

公开(公告)日：2015-08-26

申请号：EP07728627.6

申请日：2007-04-27

申请人： Robert Bosch GmbH

发明人： BENZEL, Hubert ,  ILLING, Matthias ,  LAERMER, Franz ,  KRONMUELLER, Silvia ,  FARBER, Paul ,  ARMBRUSTER, Simon ,  LAMMEL, Gerhard ,  REICHENBACH, Ralf ,  SCHELLING, Christoph ,  FEYH, Ando

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

公开(公告)号：EP2057093A1

公开(公告)日：2009-05-13

申请号：EP07841345.7

申请日：2007-08-24

申请人： Robert Bosch GmbH

发明人： VANCURA, Cyril ,  ULM, Markus ,  STARK, Brian ,  METZ, Matthias ,  FUCHS, Tino ,  LAERMER, Franz ,  KRONMUELLER, Silvia

IPC分类号： B81C1/00

CPC分类号： B81C1/0096 ,  B81B3/0005

摘要： An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 0C is described. The coating is applied after device release but before sealing vents in the encapsulation layer Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.

公开(公告)号：EP2507855B1

公开(公告)日：2019-04-03

申请号：EP10763372.9

申请日：2010-10-11

申请人： Robert Bosch GmbH

发明人： NEUL, Reinhard ,  BISCHOPINK, Georg ,  LAERMER, Franz ,  SCHUMANN, Bernd ,  KRONMUELLER, Silvia

IPC分类号： H01M2/34 ,  H01M10/48 ,  H01H39/00

公开(公告)号：EP2084102B1

公开(公告)日：2011-10-26

申请号：EP07802761.2

申请日：2007-08-21

申请人： Robert Bosch GmbH

发明人： KRONMUELLER, Silvia ,  FEYH, Ando ,  FUCHS, Tino ,  LEINENBACH, Christina ,  LAMMER, Marco

IPC分类号： B81C1/00

CPC分类号： B81C1/00333 ,  B81C2201/0115 ,  B81C2201/0132 ,  B81C2203/0136 ,  B81C2203/0145

摘要： The invention provides a capping technology in which, despite the fact that the structures (2) which are surrounded by a silicon/germanium filling layer (4, 3) are exposed using ClF3 etching through micropores in the silicon capping (7), an etching attack on the silicon cap (7, 11) is prevented in this process, namely either by particularly selective (for instance 10000:1 or higher) setting of the etching process itself or by using the knowledge that the oxide of a germanium-rich layer (5, 10), in contrast to the oxidized porous silicon (11), is not stable but rather can be easily detached to protect the silicon cap (7, 11).

公开(公告)号：EP2084103A1

公开(公告)日：2009-08-05

申请号：EP07803365.1

申请日：2007-09-10

申请人： Robert Bosch GmbH

发明人： LAERMER, Franz ,  KRONMUELLER, Silvia ,  FUCHS, Tino

IPC分类号： B81C1/00

CPC分类号： B81C1/0096 ,  B81B3/0005 ,  B81C2201/112 ,  B81C2203/0109 ,  B81C2203/031

摘要： A micromechanical component with a substrate and a functional element is proposed, wherein the functional element has a functional surface with an antistick layer applied at least in regions and serving for reducing surface adhesive forces, wherein the antistick layer is furthermore stable with respect to a temperature of above 800 °C.

公开(公告)号：EP2084102A1

公开(公告)日：2009-08-05

申请号：EP07802761.2

申请日：2007-08-21

申请人： Robert Bosch GmbH

发明人： KRONMUELLER, Silvia ,  FEYH, Ando ,  FUCHS, Tino ,  LEINENBACH, Christina ,  LAMMER, Marco

IPC分类号： B81C1/00

CPC分类号： B81C1/00333 ,  B81C2201/0115 ,  B81C2201/0132 ,  B81C2203/0136 ,  B81C2203/0145

摘要： The invention provides a capping technology in which, despite the fact that the structures (2) which are surrounded by a silicon/germanium filling layer (4, 3) are exposed using ClF3 etching through micropores in the silicon capping (7), an etching attack on the silicon cap (7, 11) is prevented in this process, namely either by particularly selective (for instance 10000:1 or higher) setting of the etching process itself or by using the knowledge that the oxide of a germanium-rich layer (5, 10), in contrast to the oxidized porous silicon (11), is not stable but rather can be easily detached to protect the silicon cap (7, 11).

公开(公告)号：EP1999783B1

公开(公告)日：2011-02-16

申请号：EP07726749.0

申请日：2007-03-09

申请人： Robert Bosch GmbH

发明人： BENZEL, Hubert ,  ILLING, Matthias ,  LAERMER, Franz ,  KRONMUELLER, Silvia ,  FARBER, Paul ,  ARMBRUSTER, Simon ,  LAMMEL, Gerhard ,  REICHENBACH, Ralf ,  SCHELLING, Christoph ,  FEYH, Ando

IPC分类号： H01L21/225

CPC分类号： H01L21/228 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658 ,  H01L21/02667 ,  H01L21/223 ,  H01L21/225 ,  H01L21/324

摘要： The invention provides a method for fabricating a semiconductor structure with the following steps: a crystalline semiconductor substrate (1) is provided; a porous region (10) adjoining a surface (OF) of the semiconductor substrate (1) is provided; a dopant (12) is introduced into the porous region (10) from the surface (OF); and the porous region (10) is thermally recrystallized into a crystalline doping region (10') of the semiconductor substrate (1) whose doping type and/or doping concentration and/or doping distribution differ(s) from that/those of the semiconductor substrate (1). The invention likewise provides a corresponding semiconductor structure.

公开(公告)号：EP2036118A1

公开(公告)日：2009-03-18

申请号：EP07728627.6

申请日：2007-04-27

申请人： Robert Bosch GmbH

发明人： BENZEL, Hubert ,  ILLING, Matthias ,  LAERMER, Franz ,  KRONMUELLER, Silvia ,  FARBER, Paul ,  ARMBRUSTER, Simon ,  LAMMEL, Gerhard ,  REICHENBACH, Ralf ,  SCHELLING, Christoph ,  FEYH, Ando

IPC分类号： H01L21/20

CPC分类号： H01L21/02008 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02612 ,  H01L21/02656 ,  H01L21/02658 ,  H01L21/02667 ,  H01L33/346

摘要： The invention relates to a method for producing a silicon substrate (1). Said method comprises the following steps: a silicon substrate having an essentially flat silicon surface is prepared, a porous silicon surface having a plurality of pores (2), in particular with macropores and/or mesopores and/or nanopores, is produced, a filling material which is to be introduced into the silicon and which has a diameter that is smaller than the diameter of the pores (2) is applied, the filling material is introduced into the pores (2), optionally, excess filling material (3) is removed from the silicon surface, and the silicon substrate (1) provided with the filling material (3) filled into the pores (2) is tempered at a temperature of between approximately 1000°C to approximately 1400°C in order to reseal the produced pores (2) and to seal the filling material.