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1.发明公开
公开(公告)号：EP2492749A1
公开(公告)日：2012-08-29
申请号：EP12157113.7
申请日：2012-02-27
发明人： Bae, Young Cheol , Bell, Rosemary , Cardolaccia, Thomas , Lee, Seung-Hyun , Liu, Yi , Park, Jong Keun
CPC分类号： G03F7/0397 , G03F7/091 , G03F7/2041 , G03F7/325
摘要： Provided are photoresist compositions useful in forming photolithographic patterns. Also provided are substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供可用于形成光刻图案的光刻胶组合物。 还提供了涂覆有光致抗蚀剂组合物的基材和形成光刻图案的方法。 该组合物，方法和涂覆的基材在制造半导体器件中具有特别的适用性。
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2.发明公开
公开(公告)号：EP2527919A1
公开(公告)日：2012-11-28
申请号：EP12180298.7
申请日：2011-09-08
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041 , G03F7/325
摘要： Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供可用于通过负色调显影工艺形成光刻图案的光刻胶组合物。 还提供了通过负色调显影工艺形成光刻图案的方法和涂覆有光致抗蚀剂组合物的基板。 该组合物，方法和涂覆的基材在制造半导体器件中具有特别的适用性。
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公开(公告)号：EP2336824A1
公开(公告)日：2011-06-22
申请号：EP10167373.9
申请日：2010-06-25
发明人： Bae, Young Cheol , Cardolaccia, Thomas , Liu, Yi
IPC分类号： G03F7/00 , G03F7/40 , H01L21/027
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337
摘要： Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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4.发明公开Polymers, photoresist compositions and methods of forming photolithographic patterns 审中-公开Polymere，Fotoresistzusammensetzungen und Verfahren zur Herstellung von fotolithographischen Mustern
公开(公告)号：EP2472326A1
公开(公告)日：2012-07-04
申请号：EP11195241.2
申请日：2011-12-23
发明人： Bae, Young Cheol , Peterson, Thomas H. , Liu, Yi , Park, Jong Keun , Lee, Seung-Hyun , Cardolaccia, Thomas
IPC分类号： G03F7/039 , C08F220/28
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/11 , G03F7/2041 , G03F7/322 , G03F7/325
摘要： Provided are polymers that include a unit comprising a particular acetal moiety and a unit comprising a lactone moiety. Also provided are photoresist compositions containing such a polymer, substrates coated with the photoresist compositions and methods of forming photolithographic patterns. The polymers, compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供的是包括包含特定缩醛部分的单元和包含内酯部分的单元的聚合物。 还提供了含有这种聚合物的光致抗蚀剂组合物，涂有光致抗蚀剂组合物的基材和形成光刻图案的方法。 聚合物，组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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5.发明公开
公开(公告)号：EP2428843A1
公开(公告)日：2012-03-14
申请号：EP11180515.6
申请日：2011-09-08
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/2041 , G03F7/325
摘要： Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
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6.发明公开Photoresist compositions and methods of forming photolithographic patterns 有权Verfahren zum Bilden von fotolithografischen Strukturen
公开(公告)号：EP2390722A1
公开(公告)日：2011-11-30
申请号：EP11168171.4
申请日：2011-05-31
CPC分类号： G03F7/0382 , C07C69/54 , C07C2603/74 , C08F2220/283 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/40 , H01L21/0274 , H01L21/0276
摘要： Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.
摘要翻译： 提供了通过负色调显影方法形成光刻图案的光致抗蚀剂组合物。 还提供了通过负色调显影方法形成光刻图案的方法和用光致抗蚀剂组合物涂覆的基材。 组合物，方法和涂覆的基材在半导体器件的制造中具有特别的适用性。
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公开(公告)号：EP2390722B1
公开(公告)日：2016-02-10
申请号：EP11168171.4
申请日：2011-05-31
CPC分类号： G03F7/0382 , C07C69/54 , C07C2603/74 , C08F2220/283 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/16 , G03F7/20 , G03F7/2041 , G03F7/32 , G03F7/325 , G03F7/40 , H01L21/0274 , H01L21/0276
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公开(公告)号：EP2287670A1
公开(公告)日：2011-02-23
申请号：EP10167371.3
申请日：2010-06-25
发明人： Bae, Young Cheol , Cardolaccia, Thomas , Liu, Yi
IPC分类号： G03F7/00 , G03F7/40 , H01L21/027
CPC分类号： H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
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9.发明公开
公开(公告)号：EP2287668A1
公开(公告)日：2011-02-23
申请号：EP10167367.1
申请日：2010-06-25
发明人： Bae, Young Cheol , Cardolaccia, Thomas , Liu, Yi
IPC分类号： G03F7/00 , G03F7/40 , H01L21/027
CPC分类号： H01L23/481 , G03F7/0035 , G03F7/40 , H01L21/0273 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming electronic devices are provided. The methods involve alkaline treatment of photoresist patterns and allow for the formation of high density resist patterns. The methods find particular applicability in semiconductor device manufacture.
摘要翻译： 提供了形成电子设备的方法。 该方法涉及光致抗蚀剂图案的碱处理并且允许形成高密度抗蚀剂图案。 该方法特别适用于半导体器件制造。
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公开(公告)号：EP2287667B1
公开(公告)日：2013-03-27
申请号：EP10167364.8
申请日：2010-06-25
发明人： Bae, Young Cheol , Cardolaccia, Thomas , Liu, Yi
IPC分类号： G03F7/00 , G03F7/40 , H01L21/027
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338
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