摘要:
A method for forming a silicon film which comprises discharging an ink composition (11) selectively onto a predetermined region of a substrate using an ink jet head (12) to form a pattern of a silicon precursor, and then subjecting the pattern to a treatment by heat and/or light to convert the silicon precursor to an amorphous silicon film or a poly-crystal silicon film. The method can be used for providing a silicon film pattern on a large area portion of a substrate with saving energy with a low cost.
摘要:
An ink composition 11 containing a silicon precursor is selectively discharged into predetermined regions on a substrate from an ink jet head 12 to form a pattern of the silicon precursor, and is subjected to a heat and/or light treatment to convert the silicon precursor into an amorphous silicon film 15 or a polycrystalline silicon film 16. A silicon film pattern is thereby obtained on a large area at low cost with low energy.
摘要:
An efficient multiple-wavelength light emitting device is provided. This multiple-wavelength light emitting device comprises a light emitting layer (4) for emitting light containing wavelength components to be output, a negative electrode (5) that is positioned at the back surface of the light emitting layer and that transmits at least a portion of the light, reflecting layers (7R, 7G, and 7B), positioned at the back surface of the negative electrode, for reflecting, of the light emitted through the negative electrode to the back surface, light having specific wavelengths, which reflecting layers are stacked up in order perpendicularly to the light axis, in correspondence with the wavelengths of the light to be reflected, thus configuring a reflecting layer group (7). In the direction perpendicular to the light axis, divisions are made in any of at least two or more light emission regions which reflect light of different wavelengths. In each light emission region, the distance between the reflecting surface of the reflecting layer (7) on the semi-transparent side and the reflecting surface in the semi-reflecting layer (2) is adjusted in this configuration so that it becomes a resonating optical path length for the light that is emitted in the light emission region.
摘要:
A method including a step of forming a first region (24) on which the material of a member of a ferroelectric capacitor section is easily deposited and a second region (26) on which the material for forming the ferroelectric capacitor section is less easily deposited than the first region (24), in the surface of a substrate (10) on which a transistor is formed, and a step of supplying materials to the substrate (10), and forming a first electrode (32), a ferroelectric film (34), and a second electrode (36) in the first region (24).
摘要:
All or part of thin film, such as silicon film, insulating film and a conducting film, which composes a thin-film transistor are formed using liquid materials. Coating of liquid material on a substrate is heat-treated to form desired thin film.
摘要:
A circuit section 22C of a TFT layer 22 is disposed behind an adjacent EL display device 14, so that the gap between pixels at the peripheries of the adjacent EL display devices 14 may be 10 µm. Thus, four EL display devices 14 appear to be unified, forming the large EL display panel 10. In addition, in the case in which a plurality of EL display devices are arranged in a matrix pattern, the pitch between the pixels provided in the pixel section of the TFT array is maintained constant.
摘要:
An information processing system that is configured in such a manner that computational processing is performed on input data in accordance with a processing sequence, for outputting data, comprises: a plurality of arithmetic units (7-1 to 7-x), each computing at an arithmetic precision 2 m bits (where m is a natural number) based on the processing sequence; and a plurality of cascade connection terminals for cascading these arithmetic units each other. When the maximum arithmetic precision that is required during computational processing is 2 n bits (where n is a natural number and is fixed), x numbers of (where x is a natural number) the arithmetic units are cascaded in a manner such that the inequality x ≥ 2 n /2 m is satisfied. When an arithmetic precision of 2 n1 bits (where n1 ≤ n, and n1 is variable) is necessary during computational processing, x1 numbers of the arithmetic units are cascaded in a manner such that the inequality x1 ≥ 2 n1 /2 m (where x1 is a natural number and is variable) is satisfied. This makes it possible to easily implement an information processing system for performing computations to any desired precision in a hardware manner, and also makes it possible to support a simple hardware-based method of expanding the arithmetic precision.
摘要:
A rare earth element-iron base permanent magnet and a process for its production are disclosed. The permanent magnet is produced by hot working of cast ingot prepared by melting and casting an alloy comprising at least one of rare earth metals represented by R, and Fe, B, and Cu at 500°C or above and has fine and magnetically anisotripic crystal particles. The process for its production comprises hot working of cast ingot obtained by melting and casting said alloy at 500°C or above. This process affords a permanent magnet having magnetic properties equivalent or superior to those of a permanent magnet produced by sintering which has been believed to have the best magnetic properties in a simplified manner, thus providing a permanent magnet with high performances inexpensively. In addition, heat treatment of the cast ingot obtained by melting and casting the aloy at 250°C or above, yields an isotropic rare earth earth element-iron base permanent magnet.
摘要:
A ferroelectric memory includes a substrate and a sheet-shaped device formed over the substrate through an adhesive layer. The sheet-shaped device includes a memory cell array in which a ferroelectric layer is disposed at least in intersecting regions of a plurality of lower electrodes and a plurality of upper electrodes which are formed in the shape of lines, and a peripheral circuit section for the memory cell array.
摘要:
A color passive-matrix electroluminescent device that produces vivid colors and is easily manufactured with a simple process, wherein a bank (4) required for making an organic film with an ink jet head is formed perpendicularly to an anode (6) and is used to pattern a cathode (1). The patterning of the cathode is performed without increasing the number of process steps, which in turn allows the manufacture of a full-color passive-matrix electroluminescent device at low cost.