公开(公告)号：EP2733736A3

公开(公告)日：2018-01-24

申请号：EP13005391.1

申请日：2013-11-15

申请人： SK hynix Inc.

发明人： Jeon, In Gyun

IPC分类号： H01L21/60 ,  H01L23/48 ,  H01L27/146 ,  H01L21/768 ,  H01L21/822

CPC分类号： H01L25/50 ,  H01L21/76802 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/481 ,  H01L24/06 ,  H01L24/07 ,  H01L24/08 ,  H01L24/80 ,  H01L24/82 ,  H01L24/92 ,  H01L27/14612 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/06051 ,  H01L2224/06505 ,  H01L2224/06517 ,  H01L2224/08146 ,  H01L2224/08147 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/82031 ,  H01L2224/821 ,  H01L2224/9202 ,  H01L2224/9212 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2224/05552 ,  H01L2924/00

摘要： The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.

摘要翻译： 本发明涉及一种用于电连接晶片的方法，晶片通过氧化物到氧化物键合方法物理键合两个晶片，然后通过对接接触结构电连接两个晶片。 晶片通过相对简单的方法彼此物理结合，然后通过TSV或对接接触孔电连接。 因此，由于可以简化制造工艺，所以可以减少工艺误差，并且可以提高产品产量。