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公开(公告)号：EP4066274A1
公开(公告)日：2022-10-05
申请号：EP20807825.3
申请日：2020-10-26
申请人： SOITEC
发明人： RADU, Ionut , BIARD, Hugo , MALEVILLE, Christophe , GUIOT, Eric , LANDRU, Didier
IPC分类号： H01L21/02 , H01L21/324 , H01L21/04 , H01L21/762
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2.发明公开
公开(公告)号：EP4176462A1
公开(公告)日：2023-05-10
申请号：EP21737714.2
申请日：2021-06-08
发明人： ALLIBERT, Frédéric , LANDRU, Didier , KONONCHUK, Oleg , GUIOT, Eric , GAUDIN, Gweltaz , WIDIEZ, Julie , FOURNEL, Franck
IPC分类号： H01L21/18
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3.发明授权Process for locally dissolving the oxide layer in a semiconductor-on-insulator type structure 有权一种用于氧气的在层中局部释放的半导体上绝缘体结构组成过程
公开(公告)号：EP2329523B1
公开(公告)日：2013-09-11
申请号：EP09815672.2
申请日：2009-09-21
申请人： Soitec
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/76256 , H01L2224/05124 , H01L2924/00014
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4.发明公开
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公开(公告)号：EP2979305A1
公开(公告)日：2016-02-03
申请号：EP14713100.7
申请日：2014-03-26
IPC分类号： H01L31/18
CPC分类号： H01L33/0079 , H01L21/67092 , H01L21/6835 , H01L21/6836 , H01L21/76251 , H01L21/76254 , H01L21/76275 , H01L31/02008 , H01L31/024 , H01L31/028 , H01L31/0304 , H01L31/047 , H01L31/1876 , H01L31/1892 , H01L2221/68345 , H01L2221/68359 , H01L2221/68363 , H01L2221/68368 , H01L2221/68386 , H01L2223/54426 , Y02E10/50 , Y02P70/521
摘要： This disclosure is related to a manufacturing method for a plurality of photovoltaic cells comprising the steps of: obtaining a plurality of photovoltaic cells placed at a first distance from each other; attaching a stretching material to the plurality of photovoltaic cells; and stretching the stretching material such that the plurality of photovoltaic cells result at a second distance from each other, wherein the second distance is greater that the first distance.
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公开(公告)号：EP4449477A1
公开(公告)日：2024-10-23
申请号：EP22840798.7
申请日：2022-12-13
申请人： SOITEC
发明人： BIARD, Hugo , GUIOT, Eric
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公开(公告)号：EP4409621A1
公开(公告)日：2024-08-07
申请号：EP22783545.1
申请日：2022-09-13
申请人： SOITEC
发明人： ALLIBERT, Frédéric , GUIOT, Eric
IPC分类号： H01L21/02
CPC分类号： H01L21/02002 , H01L21/02529 , H01L21/02378 , H01L21/02447 , H01L21/02502 , H01L21/0243 , H01L21/02433 , H01L21/02658 , H01L21/0262
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8.发明公开
公开(公告)号：EP4226417A1
公开(公告)日：2023-08-16
申请号：EP21801968.5
申请日：2021-10-04
申请人： SOITEC
发明人： GUIOT, Eric
IPC分类号： H01L21/762
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公开(公告)号：EP3411908B1
公开(公告)日：2020-03-18
申请号：EP17701524.5
申请日：2017-01-27
IPC分类号： H01L31/0725 , C30B33/06 , H01L21/20 , H01L21/203 , H01L31/18 , H01L31/056 , H01L31/054 , H01L31/043
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公开(公告)号：EP3411908A1
公开(公告)日：2018-12-12
申请号：EP17701524.5
申请日：2017-01-27
IPC分类号： H01L31/0725 , C30B33/06 , H01L21/20 , H01L21/203 , H01L31/18 , H01L31/056 , H01L31/054 , H01L31/043
摘要： Engineered substrate comprising: a seed layer made of a first semiconductor material for growth of a solar cell; a first bonding layer on the seed layer; a support substrate made of a second semiconductor material; a second bonding layer on a first side of the support substrate; a bonding interface between the first and second bonding layers; the first and second bonding layers each made of metallic material; wherein doping concentration and thickness of the engineered substrate, in particular of the seed layer, the support substrate, and both the first and second bonding layers, are selected such that the absorption of the seed layer is less than 20%, preferably less than 10%, as well as total area-normalized series resistance of the engineered substrate is less than 10 mOhm.cm2, preferably less than 5 mOhm.cm2.
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