SILICA GLASS CRUCIBLE
    2.
    发明授权

    公开(公告)号:EP3018236B1

    公开(公告)日:2018-08-08

    申请号:EP13888681.7

    申请日:2013-06-30

    申请人: SUMCO Corporation

    IPC分类号: C30B15/10 C30B29/06 C03B19/09

    摘要: A vitreous silica crucible, comprising a substantially cylindrical straight body portion having an opening on top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is larger than that of the bottom portion, wherein, an inner surface of the crucible has a concavo-convex structure in which a groove-shaped valley is interposed between ridges, and an average interval of the ridges is 5 - 100 µm.

    SILICON SINGLE CRYSTAL PULLING METHOD
    3.
    发明公开
    SILICON SINGLE CRYSTAL PULLING METHOD 有权
    VERFAHREN ZUMZÜCHTENEINES SILICIUMEINKRISTALLS

    公开(公告)号:EP3015574A1

    公开(公告)日:2016-05-04

    申请号:EP13887931.7

    申请日:2013-06-29

    申请人: Sumco Corporation

    IPC分类号: C30B15/10 C30B29/06

    CPC分类号: C30B15/10 C30B29/06

    摘要: A pulling-up method of silicon single crystal comprises a process of laying a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is laid between the susceptor's inner surface and the crucible's outer surface.

    摘要翻译: 硅单晶的提拉方法包括在基座的内表面和坩埚的外表面之间铺设成型体的工艺。 模制体是基于能够容纳玻璃状石英坩埚的基座的内表面形状和坩埚的三维数据的三维数据形成的,以便使得基座的中心轴和坩埚的中心轴基本对准 被放置在基座的内表面和坩埚的外表面之间。

    MANUFACTURING METHOD AND MANUFACTURING SYSTEM FOR SILICON SINGLE CRYSTAL
    6.
    发明公开
    MANUFACTURING METHOD AND MANUFACTURING SYSTEM FOR SILICON SINGLE CRYSTAL 审中-公开
    硅单晶的制造方法和制造系统

    公开(公告)号:EP3199668A1

    公开(公告)日:2017-08-02

    申请号:EP15844603.9

    申请日:2015-09-24

    申请人: SUMCO Corporation

    IPC分类号: C30B15/00 C30B29/06

    摘要: The capacity of respective vitreous silica crucible is grasped precisely to predict the initial liquid surface level of the silicon melt in the vitreous silica crucible. Thereby the dipping process of the seed crystal is reliably performed.
    Spatial coordinates of multiple points on an inner surface of the vitreous silica crucible prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible from a combination of polygons having each measurement point as a vertex coordinate is specified (S11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (S12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (S13); a weight of the silicon melt having the volume is obtained (S14); raw material having the weight is filled in the vitreous silica crucible (S15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (S17).

    摘要翻译: 为了预测氧化硅玻璃坩埚中的硅熔体的初始液面高度,准确把握各氧化硅玻璃坩埚的容量。 由此可靠地进行晶种的浸渍处理。 将原料填充到氧化硅玻璃坩埚中之前的氧化硅玻璃坩埚的内表面上的多个点的空间坐标和氧化硅玻璃坩埚的内表面的三维形状由具有各个测量点的多边形的组合 指定顶点坐标(S11); 预先设定硅玻璃坩埚内的硅熔液的初始液面水平的预测值(S12)。 基于氧化硅玻璃坩埚的内表面的三维形状来获得满足初始液面水平的预测值的硅熔体的体积(S13); 获得具有体积的硅熔体的重量(S14); 在氧化硅玻璃坩埚中填充具有重量的原料(S15)。 基于初始液面水平的预测值执行晶种的浸入控制(S17)。

    SILICA GLASS CRUCIBLE
    7.
    发明公开
    SILICA GLASS CRUCIBLE 审中-公开
    硅玻璃坩埚

    公开(公告)号:EP3018236A1

    公开(公告)日:2016-05-11

    申请号:EP13888681.7

    申请日:2013-06-30

    申请人: SUMCO Corporation

    IPC分类号: C30B15/10 C30B29/06

    摘要: A vitreous silica crucible, comprising a substantially cylindrical straight body portion having an opening on top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is larger than that of the bottom portion, wherein, an inner surface of the crucible has a concavo-convex structure in which a groove-shaped valley is interposed between ridges, and an average interval of the ridges is 5 - 100 µm.

    SILICON SINGLE CRYSTAL PULLING METHOD
    8.
    发明授权
    SILICON SINGLE CRYSTAL PULLING METHOD 有权
    硅单晶的拉晶方法

    公开(公告)号:EP3015574B1

    公开(公告)日:2018-03-21

    申请号:EP13887931.7

    申请日:2013-06-29

    申请人: Sumco Corporation

    IPC分类号: C30B15/10 C30B29/06

    CPC分类号: C30B15/10 C30B29/06

    摘要: A pulling-up method of silicon single crystal comprises a process of laying a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is laid between the susceptor's inner surface and the crucible's outer surface.

    DESTRUCTIVE EXAMINATION METHOD AND QUALITY ASSESSMENT METHOD FOR QUARTZ GLASS CRUCIBLE
    9.
    发明公开
    DESTRUCTIVE EXAMINATION METHOD AND QUALITY ASSESSMENT METHOD FOR QUARTZ GLASS CRUCIBLE 有权
    石英玻璃坩埚破坏性检测方法及质量评价方法

    公开(公告)号:EP3199669A1

    公开(公告)日:2017-08-02

    申请号:EP15844371.3

    申请日:2015-09-24

    申请人: SUMCO Corporation

    IPC分类号: C30B29/06 C30B15/10

    摘要: Provided is a destructive inspection method and a quality determination method of vitreous silica crucible capable of inspecting in a condition as close as possible to the actual status of use.
    The destructive inspection method of the vitreous silica crucible according to the present disclosure, evaluates a crack state of an inner surface of a vitreous silica crucible 1 for pulling a silicon single crystal supported by a graphite susceptor 2 when a load is instantaneously applied to one point on the inner surface via an automatic center punch 10 while pushing the tip portion of the automatic center punch 10 against the inner surface.

    摘要翻译: 提供了一种能够在尽可能接近实际使用状态的条件下进行检查的氧化硅玻璃坩埚的破坏性检查方法和质量确定方法。 根据本公开的氧化硅玻璃坩埚的破坏性检查方法评估当负载瞬时施加到石墨基座2的一点时用于拉拽由石墨基座2支撑的硅单晶的氧化硅玻璃坩埚1的内表面的开裂状态 同时通过自动中心冲头10在内表面上推动自动中心冲头10的尖端部分抵靠内表面。

    QUARTZ GLASS CRUCIBLE AND STRAIN MEASUREMENT DEVICE THEREFOR
    10.
    发明公开
    QUARTZ GLASS CRUCIBLE AND STRAIN MEASUREMENT DEVICE THEREFOR 审中-公开
    德意志银行(DEHNUNGSMESSUNGSVORRICHTUNGDAFÜR)的QUARZGLASTIEGEL

    公开(公告)号:EP3088573A1

    公开(公告)日:2016-11-02

    申请号:EP14874952.6

    申请日:2014-12-25

    申请人: SUMCO Corporation

    摘要: A distortion distribution of an entire vitreous silica crucible is measured in a non-destructive way.
    A distortion-measuring apparatus comprises: a light source 11 which irradiates the vitreous silica crucible 1 from outside; a first polarizer 12 and a first quarter-wave plate 13 disposed between the light source 11 and an outer surface of the vitreous silica crucible 1 wall; a camera 14 disposed inside of the vitreous silica crucible 1; a camera control mechanism 15 configured to control a photographing direction of the camera 14; a second polarizer 16 and a second quarter-wave plate 17 disposed between the camera 14 and an inner surface of the vitreous silica crucible 1's wall. An optical axis of the second quarter-wave plate 17 inclines 90 degrees with respect to the first quarter-wave plate 13. The camera 14 conducts photographing of a light which is emitted from the light source 11 and passes through the first polarizer 12, the first quarter-wave plate 13, the wall of the vitreous silica crucible 1, the second quarter-wave plate 17, and the second polarizer 16.

    摘要翻译: 以非破坏性方式测量整个石英玻璃坩埚的失真分布。 变形测量装置包括:从外部照射石英玻璃坩埚1的光源11; 设置在光源11和石英玻璃坩埚1壁的外表面之间的第一偏振器12和第一四分之一波长板13; 设置在石英玻璃坩埚1内的照相机14; 被配置为控制相机14的拍摄方向的相机控制机构15; 设置在照相机14和石英坩埚1的壁的内表面之间的第二偏振片16和第二四分之一波片17。 第二四分之一波片17的光轴相对于第一四分之一波片13倾斜90度。照相机14进行从光源11发射并穿过第一偏振器12的光的拍摄, 第一四分之一波片13,石英玻璃坩埚1的壁,第二四分之一波片17和第二偏振器16。