摘要:
An inspection method of vitreous silica crucibles, includes: a measurement step of measuring an infrared absorption spectrum or a Raman shift of a measurement point on an inner surface of the vitreous silica crucible; a determining step of predicting whether or not a surface-defect region occurs at the measurement point based on an obtained spectrum to determine a quality of the vitreous silica crucible.
摘要:
A vitreous silica crucible, comprising a substantially cylindrical straight body portion having an opening on top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is larger than that of the bottom portion, wherein, an inner surface of the crucible has a concavo-convex structure in which a groove-shaped valley is interposed between ridges, and an average interval of the ridges is 5 - 100 µm.
摘要:
A pulling-up method of silicon single crystal comprises a process of laying a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is laid between the susceptor's inner surface and the crucible's outer surface.
摘要:
An evaluation method of suitable silica powder for forming a bubble-free layer of a vitreous silica crucible for pulling of a silicon single crystal, includes: a process of measuring a porosity between silica particles in the silica powder, a process of melting the silica powder, a process of measuring a bubble content rate of a vitreous silica block obtained by cooling to harden the melted silica powder, and a process of determining whether the silica powder is suitable from the porosity of the silica powder and the bubble content rate of the vitreous silica block.
摘要:
The capacity of respective vitreous silica crucible is grasped precisely to predict the initial liquid surface level of the silicon melt in the vitreous silica crucible. Thereby the dipping process of the seed crystal is reliably performed. Spatial coordinates of multiple points on an inner surface of the vitreous silica crucible prior to filling raw material in the vitreous silica crucible, and a three-dimensional shape of the inner surface of the vitreous silica crucible from a combination of polygons having each measurement point as a vertex coordinate is specified (S11); a predictive value of an initial liquid surface level of the silicon melt in the vitreous silica crucible is preset (S12); a volume of the silicon melt satisfying the predictive value of the initial liquid surface level is obtained based on the three-dimensional shape of the inner surface of the vitreous silica crucible (S13); a weight of the silicon melt having the volume is obtained (S14); raw material having the weight is filled in the vitreous silica crucible (S15); a dipping control of the seed crystal is performed based on the predictive value of the initial liquid surface level (S17).
摘要:
A vitreous silica crucible, comprising a substantially cylindrical straight body portion having an opening on top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is larger than that of the bottom portion, wherein, an inner surface of the crucible has a concavo-convex structure in which a groove-shaped valley is interposed between ridges, and an average interval of the ridges is 5 - 100 µm.
摘要:
A pulling-up method of silicon single crystal comprises a process of laying a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is laid between the susceptor's inner surface and the crucible's outer surface.
摘要:
Provided is a destructive inspection method and a quality determination method of vitreous silica crucible capable of inspecting in a condition as close as possible to the actual status of use. The destructive inspection method of the vitreous silica crucible according to the present disclosure, evaluates a crack state of an inner surface of a vitreous silica crucible 1 for pulling a silicon single crystal supported by a graphite susceptor 2 when a load is instantaneously applied to one point on the inner surface via an automatic center punch 10 while pushing the tip portion of the automatic center punch 10 against the inner surface.
摘要:
A distortion distribution of an entire vitreous silica crucible is measured in a non-destructive way. A distortion-measuring apparatus comprises: a light source 11 which irradiates the vitreous silica crucible 1 from outside; a first polarizer 12 and a first quarter-wave plate 13 disposed between the light source 11 and an outer surface of the vitreous silica crucible 1 wall; a camera 14 disposed inside of the vitreous silica crucible 1; a camera control mechanism 15 configured to control a photographing direction of the camera 14; a second polarizer 16 and a second quarter-wave plate 17 disposed between the camera 14 and an inner surface of the vitreous silica crucible 1's wall. An optical axis of the second quarter-wave plate 17 inclines 90 degrees with respect to the first quarter-wave plate 13. The camera 14 conducts photographing of a light which is emitted from the light source 11 and passes through the first polarizer 12, the first quarter-wave plate 13, the wall of the vitreous silica crucible 1, the second quarter-wave plate 17, and the second polarizer 16.