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28 条记录 (耗时 0.013 秒)

    Wafer holder for semiconductor manufacturing apparatus
    4.
    发明公开
    Wafer holder for semiconductor manufacturing apparatus 审中-公开
    晶片保持器的用于半导体制造装置

    公开(公告)号：EP1119025A3

    公开(公告)日：2006-05-17

    申请号：EP01300423.9

    申请日：2001-01-18

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Kuibira, Akira ,  Nakata, Hirohiko

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67103

    摘要： A wafer holder includes a heater (1) and at least one pair of ceramic base members (4) with the heater (1) interposing therebetween. A backside structure (A) located on the backside relative to heater (1) has a heat insulating structure. The ceramic base member (4) in the backside structure (A) is formed of ceramic having a lower heat conductivity than that of the ceramic base member (4) in a holding surface side structure (B). Further, the ceramic base member (4) in the backside structure (A) has a heat conductivity of 100 W/mK or less and a joint layer (5) has a heat conductivity of 10 W/mK or less. In this way, the wafer holder can be provided capable of preventing heat from spreading toward the backside of the wafer holder.

    Ceramics base plate and method of producing the same
    5.
    发明公开
    Ceramics base plate and method of producing the same 有权
    Keramische Grundplatte und Verfahren zu deren Herstellung

    公开(公告)号：EP0970789A3

    公开(公告)日：2002-02-27

    申请号：EP99305490.7

    申请日：1999-07-09

    申请人： Sumitomo Electric Industries, Ltd.

    发明人： Natsuhara, Masuhiro ,  Nakata, Hirohiko

    IPC分类号： B28B11/14 ,  B28B17/00 ,  B28D5/00

    CPC分类号： B28B17/0018 ,  Y10T225/12

    摘要： A method of producing ceramics base plates is disclosed, comprising forming a continuous flaw (1a) on at least one surface of a ceramics sintered base plate (1) from end to end using a flawing tool (5) and dividing the ceramics sintered base plate (1) along the flaw (1a) by applying an external force. It is preferred that a blade edge portion (5a) of the flawing tool (5) is made of a cemented carbide or diamond. By the method of the invention, the ceramics sintered base plate can be easily divided, and ceramics base plates excellent in dimensional accuracy are obtained without lowering the strength thereof.

    摘要翻译： 公开了一种陶瓷基板的制造方法，其特征在于，使用瑕疵工具（5），在陶瓷烧结基板（1）的至少一个表面上形成连续的缺陷（1a），并将陶瓷烧结基板 （1）通过施加外力沿着缺损（1a）。 优选的是，瑕疵工具（5）的刀刃部分（5a）由硬质合金或金刚石制成。 通过本发明的方法，可以容易地分割陶瓷烧结基板，并且在不降低其强度的情况下获得尺寸精度优异的陶瓷基板。

    Aluminum nitride sintered body and method of preparing the same
    7.
    发明公开
    Aluminum nitride sintered body and method of preparing the same 有权
    Sinterkörperaus Aluminiumnitrid und Verfahren zur Herstellung desselben

    公开(公告)号：EP0974565A1

    公开(公告)日：2000-01-26

    申请号：EP99305814.8

    申请日：1999-07-22

    申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

    发明人： Yushio, Yasuhisa ,  Nakata, Hirohiko ,  Sasaki, Kazutaka ,  Natsuhara, Masuhiro ,  Tanaka, Motoyuki ,  Murase, Yasuhiro

    IPC分类号： C04B35/581 ,  H01L23/15 ,  H01L21/48

    CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is an aluminum nitride sintered body excellent in thermal shock resistance and strength and applicable to a radiating substrate for a power module or a jig for semiconductor equipment employed under a strict heat cycle. An aluminum nitride sintered body obtained with a sintering aid of a rare earth element and an alkaline earth metal element contains 0.01 to 5 percent by weight of an alkaline earth metal element compound in terms of an oxide and 0.01 to 10 percent by weight of a rare earth element compound in terms of an oxide, and the amount of carbon remaining in the sintered body is controlled to 0.005 to 0.1 percent by weight, thereby suppressing grain growth and improving thermal shock resistance and strength of the sintered body.

    摘要翻译： 提供一种耐热冲击性和强度优异的氮化铝烧结体，适用于在严格的热循环下使用的用于功率模块的放射性基板或半导体器件的夹具。 用稀土元素和碱土金属元素的烧结助剂获得的氮化铝烧结体含有0.01〜5重量％的碱土类金属元素化合物，以氧化物计，0.01〜10重量％的稀有金属元素 以氧化物换算的土元素化合物，将烧结体中剩余的碳量控制在0.005〜0.1重量％，从而抑制晶粒生长，提高耐烧结体的耐热冲击性和强度。