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1.发明公开PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD OF FORMING LITHIUM-BASED FILM BY USING THE SAME 审中-公开等离子体增强化学气相沉积设备和使用相同方法形成锂基薄膜的方法
公开(公告)号：EP3270406A1
公开(公告)日：2018-01-17
申请号：EP17150850.0
申请日：2017-01-10
发明人： LEE, Jooho , KIM, Yongsung , SONG, Sanghoon , YANG, Wooyoung , LEE, Changseung , LIM, Sungjin , HWANG, Junsik
IPC分类号： H01J37/32 , C23C16/00 , H01M4/13 , H01M10/052
摘要： A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.
摘要翻译： 一种用于在基板的表面上沉积锂（Li）基膜的等离子体增强化学气相沉积设备包括：反应室，所述基板设置在所述反应室中; 第一源供应器，被配置为将Li源材料供应到所述反应室中; 第二源供应器，其被配置为将磷（P）和氧（O）源材料和氮（N）源材料供应到反应室中; 电源，被配置为将电力供应到反应室中以在反应室中产生等离子体; 以及控制器，被配置为控制电源以开启或关闭等离子体的产生。
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2.发明公开
公开(公告)号：EP4290542A3
公开(公告)日：2024-09-18
申请号：EP23166806.2
申请日：2023-04-05
发明人： KIM, Jinhong , LEE, Changsoo , KIM, Cheheung , LEE, Jooho , CHO, Yong-Hee
CPC分类号： H01G4/33 , H01G4/40 , H01G4/10 , H01G4/1218 , H01G4/1209 , H01L28/56 , H01L28/40 , H10B12/033 , H01L28/90
摘要： A thin film capacitor (29) including a first thin-film electrode layer (11), a second thin-film electrode layer (13), a dielectric layer (12) between the first and second thin-film electrode layers, and a first interlayer between the first thin-film electrode layer and the dielectric layer and/or between the second thin-film electrode layer and the dielectric layer may be provided. The first interlayer includes a first metal oxide, the first and second thin-film electrode layers (11, 13) includes second metal having a conductive rutile (MO2) crystal structure The dielectric layer (12) includes a third metal oxide having a dielectric rutile crystal structure, and the first metal oxide, the second metal oxide, and third metal oxide have different compositions from each other. The first metal oxide includes GeO2, the third metal oxide includes TiO2, and a thickness of the first interlayer is smaller than that of the dielectric layer. A DRAM comprising the capacitor.
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公开(公告)号：EP4411764A2
公开(公告)日：2024-08-07
申请号：EP24151491.8
申请日：2024-01-12
发明人： LEE, Jooho , CHO, Yong-Hee , KIM, Jinhong , LEE, Changsoo , HEO, Sung
CPC分类号： H05K1/023 , H01L28/90 , H01L28/91 , H01L28/75 , H01G4/008 , H01G4/012 , H01G4/33 , H01G4/1218 , H01G4/40 , H01L21/02194 , H10B12/033 , H10B12/315
摘要： Provided are a capacitor, a method of preparing the capacitor, and an electronic device including the capacitor, the capacitor including a lower electrode, an upper electrode spaced apart from the lower electrode, a dielectric between the lower electrode and the upper electrode, a first layer between the lower electrode and the dielectric, and a second layer between the dielectric and the upper electrode, wherein the dielectric comprises TiO2 having a rutile phase and is doped with magnesium, the first layer includes a material having a higher work function than that of a material included in the lower electrode, and the second layer includes a dielectric protective material.
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4.发明公开
公开(公告)号：EP4345082A1
公开(公告)日：2024-04-03
申请号：EP23159080.3
申请日：2023-02-28
发明人： LEE, Changsoo , KIM, Jinhong , CHO, Yong-Hee , KIM, Cheheung , LEE, Jooho
摘要： A capacitor (100) includes a lower electrode (110) , an upper electrode (130) disposed to face the lower electrode (110), and a dielectric layer (120) between the lower electrode and the upper electrode. The lower electrode includes a first lower electrode layer (111) apart from the dielectric layer (120) and a second lower electrode layer (112) between the first lower electrode layer (111) and the dielectric layer (120). The second lower electrode layer includes vanadium oxide. Further, the vanadium oxide of the second lower electrode layer (112) includes a crystal of vanadium oxide.
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公开(公告)号：EP3910635A1
公开(公告)日：2021-11-17
申请号：EP21163427.4
申请日：2021-03-18
发明人： LEE, Jaeho , PARK, Boeun , KIM, Yongsung , LEE, Jooho
IPC分类号： G11C11/22
摘要： A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: V MAX = 1 + Z 2 Z 1 t F E FM where VMAX is a capacitance boosting operating voltage, Z 1 is impedance of the ferroelectric film, Z 2 is impedance of the dielectric film, t F is a thickness of the ferroelectric film, and E FM is an electric field applied to the ferroelectric film having a maximum polarization.
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6.发明公开
公开(公告)号：EP3813134A1
公开(公告)日：2021-04-28
申请号：EP20174050.3
申请日：2020-05-12
发明人： SONG, Jeonggyu , JUNG, Kyooho , KIM, Younsoo , KIM, Haeryong , LEE, Jooho
IPC分类号： H01L49/02 , C23C16/34 , H01L21/02 , H01L27/108
摘要： A capacitor includes: a lower electrode including a metal nitride represented by MM'N, wherein M is a metal element, M' is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM'ON, wherein M is a metal element, M' is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
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7.发明公开
公开(公告)号：EP4372775A1
公开(公告)日：2024-05-22
申请号：EP23189273.8
申请日：2023-08-02
发明人： SONG, Jeonggyu , CHO, Euae , HAN, Narae , KIM, Beomseok , KIM, Cheheung , LEE, Jooho , CHOI, Wonsik
摘要： A capacitor, a semiconductor device, and an electronic apparatus including the semiconductor device are disclosed. The capacitor includes a first electrode (110); a second electrode (140) disposed apart from the first electrode; a dielectric film (120) between the first electrode and the second electrode; and a leakage current reducing layer (130) provided on the dielectric film between the first electrode and the second electrode and including MxAlyOz.
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公开(公告)号：EP4148753A2
公开(公告)日：2023-03-15
申请号：EP22174598.7
申请日：2022-05-20
发明人： KIM, Jinhong , LEE, Changsoo , KIM, Yongsung , DO, Euncheol , LEE, Jooho , CHO, Yong-Hee
IPC分类号： H01G4/008 , H01G4/12 , H01G4/33 , H01L27/108 , H01L27/01 , H01L27/11502 , H01L49/02
摘要： An electronic device comprising a capacitor (CA1) and a transistor (TR) are electrically connected to each other through a contact (20). The capacitor (CA1) including a lower electrode (201); an upper electrode (401) apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric thin film (301) including a dielectric layer including TiO 2 , and a leakage current reducing layer including GeO 2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
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公开(公告)号：EP4401101A3
公开(公告)日：2024-10-30
申请号：EP24150391.1
申请日：2024-01-04
发明人： KIM, Haeryong , LEE, Jinho , KIM, Donghyun , KIM, Beomseok , KIM, Cheheung , LEE, Jooho
摘要： Provided are a capacitor and an electronic device including the same. The capacitor includes a first electrode layer, a second electrode layer, a dielectric layer disposed between the first electrode layer and the second electrode layer, and an interlayer disposed between the first electrode layer and the dielectric layer. The interlayer includes a first interface material, the first interface material includes at least one Group 13 element, and the at least one Group 13 element is not aluminum (Al).
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公开(公告)号：EP4401101A2
公开(公告)日：2024-07-17
申请号：EP24150391.1
申请日：2024-01-04
发明人： KIM, Haeryong , LEE, Jinho , KIM, Donghyun , KIM, Beomseok , KIM, Cheheung , LEE, Jooho
CPC分类号： H01G4/33 , H01G4/008 , H01G4/085 , H01G4/1209 , H01G4/012 , H01L28/75 , H01L28/56 , H01G4/1272 , H10B12/30
摘要： Provided are a capacitor and an electronic device including the same. The capacitor includes a first electrode layer, a second electrode layer, a dielectric layer disposed between the first electrode layer and the second electrode layer, and an interlayer disposed between the first electrode layer and the dielectric layer. The interlayer includes a first interface material, the first interface material includes at least one Group 13 element, and the at least one Group 13 element is not aluminum (Al).
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