公开(公告)号：EP1714294B1

公开(公告)日：2016-04-20

申请号：EP05710153.7

申请日：2005-02-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： KATO, Kiyoshi

IPC分类号： G11C29/00 ,  G11C16/22

CPC分类号： G11C16/22 ,  G11C29/702

公开(公告)号：EP2510541A1

公开(公告)日：2012-10-17

申请号：EP10835827.6

申请日：2010-11-16

申请人： Semiconductor Energy Laboratory Co. Ltd.

发明人： KATO, Kiyoshi ,  KOYAMA, Jun

IPC分类号： H01L21/8242 ,  H01L21/8234 ,  H01L27/08 ,  H01L27/088 ,  H01L27/10 ,  H01L27/108 ,  H01L29/786

CPC分类号： H03K3/037 ,  G11C11/24 ,  G11C14/0054 ,  H01L27/0688 ,  H01L27/105 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/045 ,  H01L29/7869 ,  H03K19/173

摘要： To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included.

公开(公告)号：EP2519972B1

公开(公告)日：2019-06-12

申请号：EP10840858.4

申请日：2010-12-02

申请人： Semiconductor Energy Laboratory Co. Ltd.

发明人： SHIONOIRI, Yutaka ,  MIYAKE, Hiroyuki ,  KATO, Kiyoshi

IPC分类号： H01L27/115 ,  H01L27/12 ,  H01L27/13 ,  G11C16/04

公开(公告)号：EP1829102A1

公开(公告)日：2007-09-05

申请号：EP05822418.9

申请日：2005-12-21

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： KATO, Kiyoshi ,  MORIYA, Yoshitaka, Semiconductor Energy Lab. Co., Ltd.

IPC分类号： H01L21/822 ,  H01L27/04 ,  G06K19/07 ,  G06K19/077

CPC分类号： G06K19/0701 ,  G06K19/07749 ,  H01L21/84 ,  H01L27/12

摘要： A semiconductor device that can prevent reduction in the amplitude of electromagnetic waves transmitted from a reader/writer, and can prevent heating of an element forming layer due to a change in a magnetic field. The semiconductor device of the invention has an element forming layer formed over a substrate, and an antenna connected to the element forming layer. The element forming layer has at least wires such as a power supply wire and a ground wire that are arranged in a non-circular shape. The element forming layer and the antenna may be provided so as to overlap each other at least partially. The antenna may be provided above or below the element forming layer.

摘要翻译： 本发明提供一种半导体装置，其能够防止从读写器发送的电磁波的振幅的降低，并且能够防止由于磁场的变化而引起的元件形成层的发热。 本发明的半导体器件具有形成在衬底上的元件形成层和连接到元件形成层的天线。 元件形成层至少具有布置成非圆形形状的诸如电源线和地线之类的线。 元件形成层和天线可以被设置为至少部分地彼此重叠。 天线可以设置在元件形成层的上方或下方。

公开(公告)号：EP2534679A1

公开(公告)日：2012-12-19

申请号：EP11742135.4

申请日：2011-01-25

申请人： Semiconductor Energy Laboratory Co. Ltd.

发明人： INOUE, Hiroki ,  KATO, Kiyoshi ,  MATSUZAKI, Takanori ,  NAGATSUKA, Shuhei

IPC分类号： H01L21/8242 ,  G11C11/401 ,  G11C11/405 ,  H01L21/8247 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C11/24 ,  G11C11/403 ,  G11C11/405 ,  H01L27/1052 ,  H01L27/11521 ,  H01L27/1225

摘要： An object is to provide a semiconductor device with a novel structure in which stored data can be held even when power is not supplied, and the number of times of writing is not limited. The semiconductor device is formed using a wide gap semiconductor and includes a potential change circuit which selectively applies a potential either equal to or different from a potential of a bit line to a source line. Thus, power consumption of the semiconductor device can be sufficiently reduced.

公开(公告)号：EP2519969A1

公开(公告)日：2012-11-07

申请号：EP10840857.6

申请日：2010-12-02

申请人： Semiconductor Energy Laboratory Co. Ltd.

发明人： YAMAZAKI, Shunpei ,  KOYAMA, Jun ,  KATO, Kiyoshi

IPC分类号： H01L21/8247 ,  G11C11/402 ,  G11C11/405 ,  H01L21/8242 ,  H01L27/108 ,  H01L27/115 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/105 ,  G11C16/0425 ,  G11C16/0433 ,  H01L21/84 ,  H01L27/108 ,  H01L27/11517 ,  H01L27/1156 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/13

摘要： The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material.

摘要翻译： 该半导体装置包括源极线，位线，第一信号线，第二信号线，字线，并联连接在源极线和位线之间的存储器单元，第一驱动器电路，电连接到源极线 以及位线，电连接到第一信号线的第二驱动器电路，电连接到第二信号线的第三驱动器电路，以及电连接到字线的第四驱动器电路。 存储器单元包括：包括第一栅电极，第一源电极和第一漏电极的第一晶体管;包括第二栅电极，第二源电极和第二漏电极的第二晶体管;以及电容器。 第二晶体管包括氧化物半导体材料。

公开(公告)号：EP2070019A1

公开(公告)日：2009-06-17

申请号：EP07829066.5

申请日：2007-09-26

申请人： Semiconductor Energy Laboratory Co, Ltd.

发明人： SAITO, Toshihiko ,  SHIONOIRI, Yutaka ,  KATO, Kiyoshi

IPC分类号： G06K19/07 ,  G06K17/00 ,  H01L21/822 ,  H01L27/04

CPC分类号： H01L27/12 ,  G06K19/0701 ,  G06K19/0715 ,  G06K19/0723 ,  H01L21/84

摘要： An object of the present invention is to provide a semiconductor device which can obtain the high potential necessary for writing data to a memory, using a small circuit area. In the present invention, by using as input voltage of a booster circuit not the conventionally used output VDD of a regulator circuit 104, but rather an output VDD0 of a rectifier circuit portion 103, which is a higher potential than the VDD, the high potential necessary for writing data to a memory can be obtained with a small circuit area.

摘要翻译： 本发明的一个目的是提供一种半导体器件，它可以利用小的电路面积获得将数据写入存储器所需的高电位。 在本发明中，通过使用升压电路的输入电压而不是调节电路104的传统使用的输出VDD，而是比VDD更高的整流电路部分103的输出VDD0，高电位 将数据写入存储器所需要的电路面积很小。

公开(公告)号：EP2502272B1

公开(公告)日：2015-04-15

申请号：EP10831470.9

申请日：2010-10-29

申请人： Semiconductor Energy Laboratory Co. Ltd.

发明人： KATO, Kiyoshi ,  KOYOMA, Jun

IPC分类号： H01L27/105 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/00 ,  H01L27/088 ,  H01L27/10 ,  H01L27/108 ,  H01L29/786 ,  H03K3/037 ,  H03K3/356 ,  H03K19/00 ,  H03K19/0948 ,  H03K19/096 ,  G11C14/00 ,  G11C7/04 ,  G11C16/04 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L27/12 ,  H03K3/286

CPC分类号： H03K3/356104 ,  G11C7/04 ,  G11C14/0063 ,  G11C16/045 ,  G11C2211/4016 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/28202 ,  H01L21/28211 ,  H01L27/105 ,  H01L27/1203 ,  H01L27/1225 ,  H01L29/6659 ,  H03K3/0375 ,  H03K3/286 ,  H03K3/356 ,  H03K3/356121 ,  H03K3/356173

公开(公告)号：EP2519972A1

公开(公告)日：2012-11-07

申请号：EP10840858.4

申请日：2010-12-02

申请人： Semiconductor Energy Laboratory Co. Ltd.

发明人： SHIONOIRI, Yutaka ,  MIYAKE, Hiroyuki ,  KATO, Kiyoshi

IPC分类号： H01L27/105 ,  G11C11/401 ,  G11C11/405 ,  H01L21/8234 ,  H01L21/8242 ,  H01L27/06 ,  H01L27/088 ,  H01L27/10 ,  H01L27/108

CPC分类号： H01L27/1052 ,  G11C16/0433 ,  H01L27/115 ,  H01L27/1156 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/78648 ,  H01L29/7869

摘要： It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.

公开(公告)号：EP2517245A1

公开(公告)日：2012-10-31

申请号：EP10839180.6

申请日：2010-12-01

申请人： Semiconductor Energy Laboratory Co. Ltd.

发明人： YAMAZAKI, Shunpei ,  KOYAMA, Jun ,  KATO, Kiyoshi

IPC分类号： H01L27/105 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8247 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/10 ,  H01L27/108 ,  H01L27/11 ,  H01L27/115 ,  H01L29/786 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L27/1255 ,  G11C16/0433 ,  G11C16/26 ,  H01L21/84 ,  H01L27/108 ,  H01L27/10805 ,  H01L27/10873 ,  H01L27/11 ,  H01L27/1108 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/1156 ,  H01L27/11803 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/7869

摘要： An object of the present invention is to provide a semiconductor device having a novel structure in which in a data storing time, stored data can be stored even when power is not supplied, and there is no limitation on the number of writing. A semiconductor device includes a first transistor including a first source electrode and a first drain electrode; a first channel formation region for which an oxide semiconductor material is used and to which the first source electrode and the first drain electrode are electrically connected; a first gate insulating layer over the first channel formation region; and a first gate electrode over the first gate insulating layer. One of the first source electrode and the first drain electrode of the first transistor and one electrode of a capacitor are electrically connected to each other.

摘要翻译： 本发明的一个目的是提供一种具有新颖结构的半导体器件，其中在数据存储时间中，即使当没有供电时也可以存储存储的数据，并且写入次数没有限制。 一种半导体器件包括：第一晶体管，包括第一源电极和第一漏电极; 第一沟道形成区，其使用氧化物半导体材料并且所述第一源电极和所述第一漏电极电连接到所述第一沟道形成区; 在第一沟道形成区上方的第一栅极绝缘层; 以及第一栅极绝缘层上的第一栅电极。 第一晶体管的第一源电极和第一漏电极中的一个与电容器的一个电极彼此电连接。