公开(公告)号：EP3828934A1

公开(公告)日：2021-06-02

申请号：EP19840408.9

申请日：2019-07-25

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： MURATA, Kenichi ,  JOEI, Masahiro ,  KOGA, Fumihiko ,  YAGI, Iwao ,  HIRATA, Shintarou ,  TOGASHI, Hideaki ,  SAITO, Yosuke ,  TAKAHASHI, Shingo

IPC分类号： H01L27/146 ,  H01L27/30 ,  H04N5/335

摘要： Provided is a solid-state image capturing element including a semiconductor substrate (300) and first and second photoelectric conversion parts (500, 600) configured to convert light into electric charge. The first and the second photoelectric conversion parts (500 and 600) each have a laminated structure including an upper electrode (502, 602), a lower electrode (508, 608), a photoelectric conversion film (504, 604) sandwiched between the upper electrode and the lower electrode, and an accumulation electrode facing the upper electrode through the photoelectric conversion film and an insulating film (510, 610). The lower electrode (508, 608) of each of the first and the second photoelectric conversion parts (500, 600) is electrically connected with a common electric charge accumulation part (314) through a common penetration electrode (460) provided in common to the first and the second photoelectric conversion parts (500, 600) and penetrating through the semiconductor substrate (300), the common electric charge accumulation part (314) being provided in common to the first and the second photoelectric conversion parts (500, 600) in the semiconductor substrate (300).

公开(公告)号：EP3799122A1

公开(公告)日：2021-03-31

申请号：EP19807172.2

申请日：2019-04-19

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： JOEI, Masahiro ,  MURATA, Kenichi ,  KOGA, Fumihiko ,  YAGI, Iwao ,  HIRATA, Shintarou ,  TOGASHI, Hideaki ,  SAITO, Yosuke

IPC分类号： H01L27/146 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8234 ,  H01L23/522 ,  H01L27/088 ,  H01L27/30 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H04N5/374

摘要： A solid-state imaging element with pixel transistors and wires capable of efficiently outputting and transferring a pixel signal from a stacked photoelectric conversion film while suppressing an increase in manufacturing cost, and a manufacturing method thereof are provided.
There is provided a solid-state imaging element which includes a semiconductor substrate; a first photoelectric conversion unit provided on the semiconductor substrate; and a control unit provided so as to be stacked with the first photoelectric conversion unit and including a plurality of pixel transistors for controlling the first photoelectric conversion unit, in which the first photoelectric conversion unit includes a second electrode, a first photoelectric conversion film provided above the second electrode and converting light into charges, and a first electrode provided on the first photoelectric conversion film, the plurality of pixel transistors include an amplification transistor that amplifies and outputs the charges as a pixel signal, and a channel formation region of the amplification transistor is made of an oxide semiconductor layer.

公开(公告)号：EP3809466A1

公开(公告)日：2021-04-21

申请号：EP19819237.9

申请日：2019-06-11

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： TOGASHI, Hideaki ,  YAGI, Iwao ,  JOEI, Masahiro ,  KOGA, Fumihiko ,  MURATA, Kenichi ,  HIRATA, Shintarou ,  SAITO, Yosuke ,  FURUKAWA, Akira

IPC分类号： H01L27/146 ,  H01L27/30 ,  H04N5/369

摘要： There is provided a solid-state image sensor, a solid-state imaging device, an electronic apparatus, and a method of manufacturing a solid-state image sensor capable of improving characteristics. There is provided a solid-state image sensor (10) including a stacked structure that includes a semiconductor substrate (500), a first photoelectric converter (PD 200) provided above the semiconductor substrate and converting light into charges, and a second photoelectric converter (PD 100) provided above the first photoelectric converter and converting light into charges, where the first photoelectric converter and the second photoelectric converter include a photoelectric conversion stacked structure in which a common electrode (102, 202), a photoelectric conversion film (104, 204), and a readout electrode (108, 208) are stacked so that the first photoelectric converter and the second photoelectric converter are in a line-symmetrical relationship with each other with a vertical plane perpendicular to a stacking direction of the stacked structure as an axis of symmetry.

公开(公告)号：EP3490003A1

公开(公告)日：2019-05-29

申请号：EP17831086.8

申请日：2017-07-20

申请人： Sony Corporation ,  Sony Semiconductor Solutions Corporation

发明人： HIROSE, Yohei ,  YAGI, Iwao ,  HIRATA, Shintarou ,  MOGI, Hideaki ,  BANDO, Masashi ,  ENOKI, Osamu

IPC分类号： H01L27/30 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L27/146 ,  H01L31/10 ,  H01L51/42 ,  H04N5/369

摘要： [Solving Means]
A first solid-state imaging element according to an embodiment of the present disclosure includes a bottom-electrode; a top-electrode opposed to the bottom-electrode; a photoelectric conversion layer provided between the bottom-electrode and the top-electrode and including a first organic semiconductor material; and an upper inter-layer provided between the top-electrode and the photoelectric conversion layer, and including a second organic semiconductor material having a halogen atom in a molecule at a concentration in a range from 0 volume % or more to less than 0.05 volume %.

公开(公告)号：EP3306689A1

公开(公告)日：2018-04-11

申请号：EP16803065.8

申请日：2016-05-19

申请人： Sony Semiconductor Solutions Corporation

发明人： HASEGAWA, Yuta ,  MATSUZAWA, Nobuyuki ,  OBANA, Yoshiaki ,  TAKEMURA, Ichiro ,  NAKAYAMA, Norikazu ,  SHIMOKAWA, Masami ,  YAMAGUCHI, Tetsuji ,  YAGI, Iwao ,  MOGI, Hideaki

IPC分类号： H01L51/42 ,  H01L27/146 ,  H01L31/10

CPC分类号： H01L27/307 ,  H01L27/146 ,  H01L27/14647 ,  H01L27/14689 ,  H01L27/286 ,  H01L31/10 ,  H01L51/001 ,  H01L51/0046 ,  H01L51/0047 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/008 ,  H01L51/4253 ,  H01L51/4273 ,  Y02E10/549

摘要： A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

摘要翻译： 根据本公开的实施例的光电转换元件包括：彼此面对的第一电极和第二电极; 以及设置在所述第一电极和所述第二电极之间并且包括具有彼此不同的母骨架的第一有机半导体材料，第二有机半导体材料和第三有机半导体材料的光电转换层。 第一有机半导体材料是富勒烯和富勒烯衍生物之一。 单层膜形式的第二有机半导体材料在可见光区域中的最大光吸收波长的线性吸收系数比第一有机半导体材料的单层膜和单层膜 第三有机半导体材料。 第三有机半导体材料具有等于或高于第二有机半导体材料的HOMO能级的值。

公开(公告)号：EP4425558A1

公开(公告)日：2024-09-04

申请号：EP22886454.2

申请日：2022-09-02

申请人： Sony Semiconductor Solutions Corporation

发明人： IIJIMA, Tadashi ,  SUZUKI, Ryosuke ,  YAGI, Iwao ,  JOEI, Masahiro ,  MURATA, Kenichi

IPC分类号： H01L27/146

CPC分类号： Y02E10/549 ,  H01L27/146

摘要： A solid-state imaging device includes: a pixel section that includes a transparent semiconductor formed in an effective pixel region of an insulator, an organic photoelectric conversion film formed on the transparent semiconductor on a side opposite to the insulator, and a transparent electrode formed on the organic photoelectric conversion film on a side opposite to the transparent semiconductor; a coupling section disposed in the insulator in a peripheral region around the effective pixel region, the coupling section being coupled to a circuit that supplies electricity to the transparent electrode; and a wiring line that electrically couples the transparent electrode and the coupling section to each other, and is formed by a transparent electrode material.

公开(公告)号：EP4131386A1

公开(公告)日：2023-02-08

申请号：EP21778942.9

申请日：2021-03-24

申请人： Sony Semiconductor Solutions Corporation ,  Sony Group Corporation

发明人： JOEI, Masahiro ,  HIRATA, Shintarou ,  YUKAWA, Tomiyuki ,  SUZUKI, Ryosuke ,  NAKANO, Hiroshi ,  HAYASHI, Toshihiko ,  TAKAGUCHI, Ryotaro ,  YAGI, Iwao ,  MURATA, Kenichi

IPC分类号： H01L27/18

摘要： An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode; a third electrode; a photoelectric conversion layer; and a semiconductor layer. The first electrode and the second electrode are disposed in parallel. The third electrode is disposed to be opposed to the first electrode and the second electrode. The photoelectric conversion layer is provided between the first electrode and second electrode and the third electrode. The semiconductor layer is provided between the first electrode and second electrode and the photoelectric conversion layer. The semiconductor layer has a first layer and a second layer stacked therein in order from the photoelectric conversion layer side. The second layer has an energy level at a lowest edge of a conduction band that is shallower than an energy level of the first layer at a lowest edge of a conduction band.

公开(公告)号：EP3549183A1

公开(公告)日：2019-10-09

申请号：EP17822790.6

申请日：2017-11-29

申请人： Sony Corporation

发明人： HASEGAWA, Yuta ,  BANDO, Masashi ,  HIRATA, Shintarou ,  MOGI, Hideaki ,  YAGI, Iwao ,  UJIIE Yasuharu ,  NEGISHI, Yuki

IPC分类号： H01L51/42 ,  H01L27/30

公开(公告)号：EP2169711A1

公开(公告)日：2010-03-31

申请号：EP08790782.0

申请日：2008-07-01

申请人： Sony Corporation

发明人： YAGI, Iwao

IPC分类号： H01L21/336 ,  G02F1/1368 ,  H01L29/786 ,  H01L51/05

CPC分类号： H01L51/0541 ,  G02F1/136227 ,  G02F2001/13685 ,  G02F2202/02 ,  H01L27/3246 ,  H01L29/66742

摘要： A semiconductor device 19-1 includes a source electrode 3s and a drain electrode 3d disposed on a substrate 1, an insulating partition wall 5, which has a first opening 5a reaching end portions of the source electrode 3s and the drain electrode 3d and between these electrodes 3s-3d and which is disposed on the substrate 1, a channel portion semiconductor layer 7a, which is composed of a semiconductor layer 7 formed from above the partition wall 5 and which is disposed on the bottom portion of the first opening 5a while being separated from the semiconductor 7 on the partition wall 5, a gate insulating film 9 formed all over the surface from above the semiconductor layer 7 including the channel portion semiconductor layer 7a, and a gate electrode 11a disposed on the gate insulating film 9 while overlapping the channel portion semiconductor layer 7a.

摘要翻译： 一种半导体器件，包括：19-1上的绝缘隔壁5，其具有第一开口5a到达源电极3s的端部和漏电极3d和论文之间的源电极3s和漏电极3d设置在基板1 电极3S-3d和所有其上的基板1处理完毕，其在第一开口5a的底部配设在所述构成从分隔壁5的上方形成的半导体层7的沟道部半导体层7a中，所有和全部而被 从在隔壁5上的半导体7分离，栅极绝缘膜9形成了遍布从包括沟道部半导体层7a上的半导体层7上方的表面，和设置在所述栅极的栅极电极11a的绝缘膜9而重叠 沟道部半导体层7a上。

公开(公告)号：EP2110856A1

公开(公告)日：2009-10-21

申请号：EP08710726.4

申请日：2008-01-28

申请人： Sony Corporation ,  Riken

发明人： NOMOTO, Kazumasa ,  HIRAI, Nobukazu ,  YASUDA, Ryoichi ,  YAGI, Iwao ,  MINARI, Takeo ,  TSUKAGOSHI, Kazuhito ,  AOYAGI, Yoshinobu

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L51/05

CPC分类号： H01L51/001 ,  H01L51/0516 ,  H01L51/0529 ,  H01L51/0545

摘要： The present invention provides a method for making a thin film semiconductor device having a bottom-gate, bottom-contact-type thin film transistor structure finer in size with satisfactory characteristics, in which the interface between a gate insulating film and a thin film semiconductor layer can be maintained at satisfactory conditions without being affected by formation of source/drain electrodes. A first gate insulating film (7-1) covering a gate electrode (5) on a substrate (3) is formed, and a pair of source/drain electrodes (9) is formed on the first gate insulating film (7-1). Subsequently, a second gate insulating film (7-2) is selectively formed only on the first gate insulating film (7-2) exposed from the source/drain electrodes (9). Next, a thin film semiconductor layer (11) continuously covering from the source/drain electrodes (9) to the first gate insulating film (7-1) through the second gate insulating film (7-2) is formed while making contact with the source/drain electrodes (9). A method for making a thin film semiconductor device (1) is characterized as such.

摘要翻译： 本发明提供一种制造薄膜半导体器件的方法，该薄膜半导体器件具有尺寸较小且具有令人满意的特性的底栅，底接触型薄膜晶体管结构，其中栅极绝缘膜和薄膜半导体层 可以在令人满意的条件下保持不受源/漏电极形成的影响。 形成覆盖基板（3）上的栅极（5）的第一栅极绝缘膜（7-1），在第一栅极绝缘膜（7-1）上形成有一对源极/漏极（9） 。 随后，仅在从源极/漏极（9）露出的第一栅极绝缘膜（7-2）上选择性地形成第二栅极绝缘膜（7-2）。 接下来，形成通过第二栅极绝缘膜（7-2）从源极/漏极（9）到第一栅极绝缘膜（7-1）连续覆盖的薄膜半导体层（11），同时与 源极/漏极（9）。 制造薄膜半导体器件（1）的方法的特征如下。