公开(公告)号：EP3651210A1

公开(公告)日：2020-05-13

申请号：EP18828534.0

申请日：2018-06-12

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： SASAKI, Kohei ,  WAKIMOTO, Daiki ,  KOISHIKAWA, Yuki ,  THIEU Quang Tu

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/06 ,  H01L29/24 ,  H01L29/47

摘要： Provided is a Schottky barrier diode which is configured from a Ga 2 O 3 semiconductor, and which has a lower turn-on voltage than conventional Schottky barrier diodes. One embodiment of the present invention provides a Schottky barrier diode 1 which is provided with: a semiconductor layer 10 that is formed of a Ga 2 O 3 single crystal; an anode electrode 11 that forms a Schottky junction with the semiconductor layer 10 and has a portion which is in contact with the semiconductor layer 10, while being formed from Mo or W; and a cathode electrode 12. This Schottky barrier diode 1 has a turn-on voltage of from 0.3 V to 0.5 V (inclusive).

公开(公告)号：EP3591711A1

公开(公告)日：2020-01-08

申请号：EP18761989.5

申请日：2018-02-19

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： SASAKI, Kohei ,  WAKIMOTO, Daiki ,  KOISHIKAWA, Yuki ,  THIEU Quang Tu

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/06 ,  H01L29/47

摘要： Provided is a Schottky barrier diode which is configured from a Ga 2 O 3 -based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diode 1 is provided which has: a semiconductor layer 10 configured from a Ga 2 O 3 -based single crystal; an anode electrode 11 which forms a Schottky junction with the semiconductor layer 10, and has a portion which contacts the semiconductor layer 10 and is composed of Fe or Cu; and a cathode electrode 12.

公开(公告)号：EP3629379A1

公开(公告)日：2020-04-01

申请号：EP18790539.3

申请日：2018-04-26

申请人： National Institute of Information and Communications Technology ,  Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： HIGASHIWAKI, Masataka ,  NAKATA, Yoshiaki ,  KAMIMURA, Takafumi ,  WONG, Man Hoi ,  SASAKI, Kohei ,  WAKIMOTO, Daiki

IPC分类号： H01L29/24 ,  C30B23/08 ,  C30B29/16 ,  H01L21/336 ,  H01L21/338 ,  H01L29/12 ,  H01L29/423 ,  H01L29/47 ,  H01L29/49 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872

摘要： As an embodiment, provided is a Ga 2 O 3 -based semiconductor device 1a that has: a second Ga 2 O 3 -based crystal layer 11 containing a donor; and an N-doped region formed in the entire second Ga 2 O 3 -based crystal layer 11.

公开(公告)号：EP2933359A1

公开(公告)日：2015-10-21

申请号：EP13853138.9

申请日：2013-10-09

申请人： Tamura Corporation ,  Koha Co., Ltd.

发明人： WATANABE, Shinya ,  WAKIMOTO, Daiki ,  IIZUKA, Kazuyuki ,  KOSHI, Kimiyoshi ,  MASUI, Takekazu

IPC分类号： C30B29/16 ,  C30B15/34 ,  C30B15/36

摘要： Provided is a method for growing a β-Ga 2 O 3 single crystal, which enables the production of a plate-like β-Ga 2 O 3 single crystal having high crystal quality. In one embodiment, a method for growing a β-Ga 2 O 3 single crystal employing an EFG method is provided, said method comprising the steps of: bringing a plate-like seed crystal (20) into contact with a Ga203 melt (12), wherein the plate-like seed crystal (20) comprises a β-Ga 2 O 3 single crystal having a defect density of 5x10 5 /cm 2 or less in the whole region; and pulling up the seed crystal (20) to grow a β-Ga 2 O 3 single crystal (25).

摘要翻译： 提供一种生长²-Ga 2 O 3单晶的方法，其能够生产具有高晶体质量的板状²-Ga 2 O 3单晶。 在一个实施方案中，提供了使用EFG方法生长2-Ga 2 O 3单晶的方法，所述方法包括以下步骤：使板状晶种（20）与Ga 2 O 3熔体（12）接触， 其特征在于，所述板状晶种（20）包括在整个区域中缺陷密度为5×10 5 / cm 2以下的ζ-Ga 2 O 3单晶; 并拉起晶种（20）以生长2-Ga 2 O 3单晶（25）。

公开(公告)号：EP2933359B1

公开(公告)日：2020-03-11

申请号：EP13853138.9

申请日：2013-10-09

申请人： Tamura Corporation ,  Koha Co., Ltd.

发明人： WATANABE, Shinya ,  WAKIMOTO, Daiki ,  IIZUKA, Kazuyuki ,  KOSHI, Kimiyoshi ,  MASUI, Takekazu

IPC分类号： C30B29/16 ,  C30B15/34 ,  C30B15/36

公开(公告)号：EP2858094A1

公开(公告)日：2015-04-08

申请号：EP13798034.8

申请日：2013-05-27

申请人： Tamura Corporation ,  Koha Co., Ltd.

发明人： IIZUKA, Kazuyuki ,  WATANABE, Shinya ,  KOSHI, Kimiyoshi ,  WAKIMOTO, Daiki ,  YAMASHITA, Yoshihiro ,  SATO, Shinkuro

IPC分类号： H01L21/205 ,  C23C16/34 ,  C30B25/18 ,  C30B29/38 ,  H01L33/16 ,  H01L33/32

CPC分类号： H01L29/2003 ,  C30B25/183 ,  C30B25/186 ,  C30B29/16 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32

摘要： Provided is a semiconductor laminate structure having a Ga 2 O 3 substrate and a nitride semiconductor layer with high crystal quality on the Ga 2 O 3 substrate, and also provided is a semiconductor element containing this semiconductor laminate structure. In one embodiment, this semiconductor laminate structure ( 1 ) is provided with a β-Ga 2 O 3 substrate ( 2 ) comprising β- Ga 2 O 3 crystal in which the surface inclined from the (- 201 ) surface in the [ 102 ] direction is the primary surface ( 2 a), and a nitride semiconductor layer ( 4 ) comprising an Al x Ga y In z N ( 0 ≤x≤ 1 , 0 ≤y≤ 1 , 0 ≤z≤ 1 , x+y+z= 1 ) crystal formed by epitaxial crystal growth on the primary surface ( 2 a) of the β-Ga 2 O 3 substrate ( 2 ).

摘要翻译： 本发明提供一种在Ga 2 O 3基板上具有Ga 2 O 3基板和高结晶性的氮化物半导体层的半导体层叠结构，还提供包含该半导体层积结构的半导体元件。 在一个实施方式中，该半导体层叠结构体（1）具有包含β-Ga 2 O 3结晶的β-Ga 2 O 3基板（2），其中从[ - 102]方向上的（ - 201）表面倾斜的表面是主表面 2a）;以及氮化物半导体层（4），其包括通过外延晶体生长在所述初级线圈上形成的AlxGayInzN（0≤x≤1,0≤y≤1,0≤z≤1，x + y + z = 1）晶体 β-Ga 2 O 3基板（2）的表面（2a）。