公开(公告)号：EP3629379A1

公开(公告)日：2020-04-01

申请号：EP18790539.3

申请日：2018-04-26

申请人： National Institute of Information and Communications Technology ,  Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： HIGASHIWAKI, Masataka ,  NAKATA, Yoshiaki ,  KAMIMURA, Takafumi ,  WONG, Man Hoi ,  SASAKI, Kohei ,  WAKIMOTO, Daiki

IPC分类号： H01L29/24 ,  C30B23/08 ,  C30B29/16 ,  H01L21/336 ,  H01L21/338 ,  H01L29/12 ,  H01L29/423 ,  H01L29/47 ,  H01L29/49 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872

摘要： As an embodiment, provided is a Ga 2 O 3 -based semiconductor device 1a that has: a second Ga 2 O 3 -based crystal layer 11 containing a donor; and an N-doped region formed in the entire second Ga 2 O 3 -based crystal layer 11.

公开(公告)号：EP3933935A1

公开(公告)日：2022-01-05

申请号：EP21187580.2

申请日：2016-03-09

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： SASAKI, Kohei ,  GOTO, Ken ,  HIGASHIWAKI, Masataka ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/24 ,  C23C16/40 ,  C30B29/16 ,  H01L21/02 ,  H01L29/47

摘要： [Problem] To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

公开(公告)号：EP2765610B1

公开(公告)日：2018-12-26

申请号：EP12830340.1

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/20 ,  H01L29/04 ,  H01L29/36 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type ²-Ga 2 O 3 substrate (2); a ²-Ga 2 O 3 single crystal film (3), which is formed on the n-type ²-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the ²-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type ²-Ga 2 O 3 substrate (2) surface on the reverse side of the ²-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the ²-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the ²-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

公开(公告)号：EP2765610A1

公开(公告)日：2014-08-13

申请号：EP12830340.1

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/12 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/363 ,  H01L29/24 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type β-Ga 2 O 3 substrate (2); a β-Ga 2 O 3 single crystal film (3), which is formed on the n-type β-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the β-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type β-Ga 2 O 3 substrate (2) surface on the reverse side of the β-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the β-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the β-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

摘要翻译： 提供了高质量的Ga 2 O 3半导体元件。 作为本发明的一个实施方式，提供了包含n型²Ga 2 O 3基板（2）的Ga 2 O 3半导体元件（20）。 形成在n型2 Ga 2 O 3基板（2）上的2-Ga 2 O 3单晶膜（3）; 源极电极（22a，22b），其形成在2-Ga 2 O 3单晶膜（3）上; 形成在2-Ga 2 O 3单晶膜（3）的背面的n型²Ga 2 O 3衬底（2）表面上的漏极（25）; n型接触区域（23a，23b）分别形成在2 Ga 2 O 3单晶膜（3）中，并分别连接有源电极（22a，22b） 和形成在其上的栅极绝缘膜（26）的2 Ga 2 O 3单晶膜（3）上的栅电极（21）。

公开(公告)号：EP3151285A1

公开(公告)日：2017-04-05

申请号：EP16198900.9

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L29/812 ,  H01L21/336 ,  H01L21/338 ,  H01L29/24 ,  H01L29/36 ,  H01L29/15 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/157 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/772 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/78603 ,  H01L29/812 ,  H01L29/8126

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is a Ga 2 O 3 MESFET (30), which includes: an n-type β-Ga 2 O 3 single crystal film (3), which is formed on a high-resistance β-Ga 2 O 3 substrate (2) directly or with other layer therebetween; a source electrode (32) and a drain electrode (33), which are formed on the n-type β-Ga 2 O 3 single crystal film (3); and a gate electrode (31), which is formed on the n-type β-Ga 2 O 3 single crystal film (3) between the source electrode (32) and the drain electrode (33).

摘要翻译： 提供了高质量的Ga 2 O 3半导体元件。 提供了一种Ga 2 O 3 MESFET（30），其包括：形成在高电阻²-Ga 2 O 3衬底（2）上的n型Λ-Ga 2 O 3单晶膜（3） 直接或与其间的其它层; 源极电极（32）和漏电极（33），其形成在n型²-Ga 2 O 3单晶膜（3）上; 以及形成在源电极（32）和漏电极（33）之间的n型²-Ga 2 O 3单晶膜（3）上的栅电极（31）。

公开(公告)号：EP3588580A1

公开(公告)日：2020-01-01

申请号：EP18757087.4

申请日：2018-02-27

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/47

摘要： One embodiment of the present invention provides a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 which is formed from a Ga 2 O 3 single crystal; a second semiconductor layer 11 which is laminated on the first semiconductor layer 10 and has a trench 12 that opens to a surface 17, while being formed from a Ga 2 O 3 single crystal; an anode electrode 13 which is formed on the surface 17; a cathode electrode 14 which is formed on a surface of the first semiconductor layer 10, said surface being on the reverse side of the second semiconductor layer 11-side surface; an insulating film 15 which covers the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16 which is buried within the trench 12 of the second semiconductor layer 11 so as to be covered by the insulating film 15, while being in contact with the anode electrode 13. The second semiconductor layer 11 is configured from: a lower layer 11b which is on the first semiconductor layer side; and an upper layer 11a which is on the anode electrode 13 side, while having a higher donor concentration than the lower layer 11b.

公开(公告)号：EP3451388A1

公开(公告)日：2019-03-06

申请号：EP17789388.0

申请日：2017-04-20

申请人： Tamura Corporation

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/872 ,  H01L29/47 ,  H01L29/861 ,  H01L29/868

摘要： [Problem] To provide a trench MOS-type Schottky diode having a high withstand voltage and low loss. [Solution] According to one embodiment of the present invention, a trench MOS-type Schottky diode 1 is provided, said trench MOS-type Schottky diode having: a first semiconductor layer 10 formed of a Ga 2 O 3 single crystal; a second semiconductor layer 11, which is a layer laminated on the first semiconductor layer 10, and which has a trench 12 opened in a surface 17, said second semiconductor layer being formed of a Ga 2 O 3 single crystal; an anode electrode 13 formed on the surface 17; a cathode electrode 14 formed on the first semiconductor layer 10 surface on the reverse side of the second semiconductor layer 11; and an insulating film 15 covering the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16, which is embedded in the trench 12 of the second semiconductor layer 11 such that the trench MOS gate is covered with the insulating film 15, and which is in contact with the anode electrode 13.

公开(公告)号：EP4086974A1

公开(公告)日：2022-11-09

申请号：EP22176745.2

申请日：2017-04-20

申请人： Tamura Corporation

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/872 ,  H01L29/24 ,  H01L29/47 ,  H01L29/861 ,  H01L29/868 ,  H01L29/51 ,  H01L29/06 ,  H01L29/40

摘要： A trench MOS-type Schottky diode (1), comprising:
a first semiconductor layer (10) comprising an n-type Ga 2 O 3 -based single crystal containing a Group IV element as a donor;
a second semiconductor layer (11), comprising an n-type Ga 2 O 3 -based single crystal containing a Group IV element as a donor, laminated on the first semiconductor layer (10) and having trenches (12) opened on a surface (17) thereof opposite to the first semiconductor layer (10);
an anode electrode (13) formed on the surface (17) of the second semiconductor layer (11) opposite to the first semiconductor layer (10) and being in Schottky contact with the second semiconductor layer (11);
a cathode electrode (14) formed on a surface of the first semiconductor layer (10) opposite to the second semiconductor layer (11) and being in ohmic contact with the first semiconductor layer (10);
an insulating films (15) covering inner surfaces of the trenches (12) of the second semiconductor layer (11); and
a trench MOS gates (16) embedded in the trenches (12) of the second semiconductor layer (11) so as to be covered with the insulating films (15) and is in contact with the anode electrode (13),
wherein a donor concentration in the second semiconductor layer (11) is lower than the donor concentration in the first semiconductor layer (10),
wherein the donor concentration in the second semiconductor layer (11) is not less than 1.0×10 16 cm -3 and not more than 6.0×10 16 cm -3 , and
wherein a thickness of the second semiconductor layer (11) is not less than 4.5 µm and not more than 9 µm.

公开(公告)号：EP2765612A1

公开(公告)日：2014-08-13

申请号：EP12829607.6

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communication Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L21/338 ,  H01L29/26 ,  H01L29/812

CPC分类号： H01L29/7869 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/157 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/772 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/78603 ,  H01L29/812 ,  H01L29/8126

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is a Ga 2 O 3 MISFET (20), which includes: an n-type β-Ga 2 O 3 single crystal film (3), which is formed on a high-resistance β-Ga 2 O 3 substrate (2) directly or with other layer therebetween; a source electrode (22) and a drain electrode (23), which are formed on the n-type β-Ga 2 O 3 single crystal film (3); and a gate electrode (21), which is formed on the n-type β-Ga 2 O 3 single crystal film (3) between the source electrode (22) and the drain electrode (23).

摘要翻译： 提供了高质量的Ga 2 O 3半导体元件。 提供了一种Ga 2 O 3 MISFET（20），其包括：形成在高电阻²-Ga 2 O 3衬底（2）上的n型Λ-Ga 2 O 3单晶膜（3） 直接或与其间的其它层; 形成在n型²-Ga 2 O 3单晶膜（3）上的源电极（22）和漏电极（23）。 以及形成在源电极（22）和漏电极（23）之间的n型²-Ga 2 O 3单晶膜（3）上的栅电极（21）。

公开(公告)号：EP3273487A1

公开(公告)日：2018-01-24

申请号：EP16768439.8

申请日：2016-03-09

申请人： Tamura Corporation ,  National Institute of Information and Communication Technology ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： SASAKI, Kohei ,  GOTO, Ken ,  HIGASHIWAKI, Masataka ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： H01L29/872 ,  C23C16/40 ,  C30B29/16 ,  H01L21/329 ,  H01L29/24 ,  H01L29/47

CPC分类号： H01L29/872 ,  C23C16/40 ,  C23C16/4488 ,  C30B15/34 ,  C30B23/02 ,  C30B25/20 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/24 ,  H01L29/47 ,  H01L29/66969

摘要： [Problem]
To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

摘要翻译： [问题]提供具有优异的耐电压特性的Ga 2 O 3基高耐压肖特基势垒二极管。 根据本发明的一个实施例，提供了一种高耐压肖特基势垒二极管1，其具有：第一层10，其由包含第一IV族元素的第一Ga 2 O 3基单晶形成， 等于或低于5×1016cm-3的浓度，并且具有不小于1×1013但不大于6.0×1017cm-3的有效施主浓度; 第二层12，其由包含第二IV族元素的第二基于Ga 2 O 3的单晶形成，并且具有比第一层10更高的有效施主浓度，所述第二层被层压在第一层上 10; 形成在第一层10上的阳极电极14; 和形成在第二层12上的阴极电极15。