公开(公告)号：EP3629379A1

公开(公告)日：2020-04-01

申请号：EP18790539.3

申请日：2018-04-26

申请人： National Institute of Information and Communications Technology ,  Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： HIGASHIWAKI, Masataka ,  NAKATA, Yoshiaki ,  KAMIMURA, Takafumi ,  WONG, Man Hoi ,  SASAKI, Kohei ,  WAKIMOTO, Daiki

IPC分类号： H01L29/24 ,  C30B23/08 ,  C30B29/16 ,  H01L21/336 ,  H01L21/338 ,  H01L29/12 ,  H01L29/423 ,  H01L29/47 ,  H01L29/49 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872

摘要： As an embodiment, provided is a Ga 2 O 3 -based semiconductor device 1a that has: a second Ga 2 O 3 -based crystal layer 11 containing a donor; and an N-doped region formed in the entire second Ga 2 O 3 -based crystal layer 11.

公开(公告)号：EP3151285A1

公开(公告)日：2017-04-05

申请号：EP16198900.9

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L29/812 ,  H01L21/336 ,  H01L21/338 ,  H01L29/24 ,  H01L29/36 ,  H01L29/15 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/157 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/772 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/78603 ,  H01L29/812 ,  H01L29/8126

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is a Ga 2 O 3 MESFET (30), which includes: an n-type β-Ga 2 O 3 single crystal film (3), which is formed on a high-resistance β-Ga 2 O 3 substrate (2) directly or with other layer therebetween; a source electrode (32) and a drain electrode (33), which are formed on the n-type β-Ga 2 O 3 single crystal film (3); and a gate electrode (31), which is formed on the n-type β-Ga 2 O 3 single crystal film (3) between the source electrode (32) and the drain electrode (33).

摘要翻译： 提供了高质量的Ga 2 O 3半导体元件。 提供了一种Ga 2 O 3 MESFET（30），其包括：形成在高电阻²-Ga 2 O 3衬底（2）上的n型Λ-Ga 2 O 3单晶膜（3） 直接或与其间的其它层; 源极电极（32）和漏电极（33），其形成在n型²-Ga 2 O 3单晶膜（3）上; 以及形成在源电极（32）和漏电极（33）之间的n型²-Ga 2 O 3单晶膜（3）上的栅电极（31）。

公开(公告)号：EP3933935A1

公开(公告)日：2022-01-05

申请号：EP21187580.2

申请日：2016-03-09

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： SASAKI, Kohei ,  GOTO, Ken ,  HIGASHIWAKI, Masataka ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/24 ,  C23C16/40 ,  C30B29/16 ,  H01L21/02 ,  H01L29/47

摘要： [Problem] To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

公开(公告)号：EP2765610B1

公开(公告)日：2018-12-26

申请号：EP12830340.1

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/20 ,  H01L29/04 ,  H01L29/36 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type ²-Ga 2 O 3 substrate (2); a ²-Ga 2 O 3 single crystal film (3), which is formed on the n-type ²-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the ²-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type ²-Ga 2 O 3 substrate (2) surface on the reverse side of the ²-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the ²-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the ²-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

公开(公告)号：EP2765610A1

公开(公告)日：2014-08-13

申请号：EP12830340.1

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/12 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/363 ,  H01L29/24 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type β-Ga 2 O 3 substrate (2); a β-Ga 2 O 3 single crystal film (3), which is formed on the n-type β-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the β-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type β-Ga 2 O 3 substrate (2) surface on the reverse side of the β-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the β-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the β-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

摘要翻译： 提供了高质量的Ga 2 O 3半导体元件。 作为本发明的一个实施方式，提供了包含n型²Ga 2 O 3基板（2）的Ga 2 O 3半导体元件（20）。 形成在n型2 Ga 2 O 3基板（2）上的2-Ga 2 O 3单晶膜（3）; 源极电极（22a，22b），其形成在2-Ga 2 O 3单晶膜（3）上; 形成在2-Ga 2 O 3单晶膜（3）的背面的n型²Ga 2 O 3衬底（2）表面上的漏极（25）; n型接触区域（23a，23b）分别形成在2 Ga 2 O 3单晶膜（3）中，并分别连接有源电极（22a，22b） 和形成在其上的栅极绝缘膜（26）的2 Ga 2 O 3单晶膜（3）上的栅电极（21）。

公开(公告)号：EP3761374A1

公开(公告)日：2021-01-06

申请号：EP19761259.1

申请日：2019-02-25

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc. ,  TDK Corporation

发明人： SASAKI, Kohei ,  FUJITA, Minoru ,  HIRABAYASHI, Jun ,  ARIMA, Jun

IPC分类号： H01L29/872 ,  C30B29/16 ,  C30B33/08 ,  H01L21/329 ,  H01L29/41 ,  H01L29/47 ,  H01L29/861 ,  H01L29/868 ,  H01L29/94

摘要： Provided is a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 that is formed from a Ga 3 O 3 single crystal; a second semiconductor layer 11 that is formed from a Ga 3 O 3 single crystal and has a trench 12; an anode electrode 13; a cathode electrode 14; an insulating film 15; and a trench electrode 16. This trench MOS Schottky diode 1 is configured such that the second semiconductor layer 11 has an insulating dry etching damaged layer 11a, which has a thickness of 0.8 µm or less, in a region that includes the inner surface of the trench 12.

公开(公告)号：EP3588580A1

公开(公告)日：2020-01-01

申请号：EP18757087.4

申请日：2018-02-27

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/47

摘要： One embodiment of the present invention provides a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 which is formed from a Ga 2 O 3 single crystal; a second semiconductor layer 11 which is laminated on the first semiconductor layer 10 and has a trench 12 that opens to a surface 17, while being formed from a Ga 2 O 3 single crystal; an anode electrode 13 which is formed on the surface 17; a cathode electrode 14 which is formed on a surface of the first semiconductor layer 10, said surface being on the reverse side of the second semiconductor layer 11-side surface; an insulating film 15 which covers the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16 which is buried within the trench 12 of the second semiconductor layer 11 so as to be covered by the insulating film 15, while being in contact with the anode electrode 13. The second semiconductor layer 11 is configured from: a lower layer 11b which is on the first semiconductor layer side; and an upper layer 11a which is on the anode electrode 13 side, while having a higher donor concentration than the lower layer 11b.

公开(公告)号：EP4404276A1

公开(公告)日：2024-07-24

申请号：EP22869716.5

申请日：2022-08-03

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： TAKATSUKA, Akio ,  SASAKI, Kohei

IPC分类号： H01L29/868 ,  H01L29/201 ,  H01L29/861

CPC分类号： H01L29/868 ,  H01L29/201 ,  H01L29/861

摘要： Provided is a p-n junction diode which can achieve both of the achievement of a low turn-on voltage and the reduction in a leak current even when the p-n junction diode has a simple structure. In one embodiment, a p-n junction diode 1 is provided, which is provided with an n-type semiconductor layer 11 that is composed of a single crystal of an n-type semiconductor having a chemical composition represented by the formula: (GaxAlyIn1-x-y)2O3 (0

公开(公告)号：EP4383315A1

公开(公告)日：2024-06-12

申请号：EP22853114.1

申请日：2022-08-03

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： SASAKI, Kohei ,  LIN, Chia-Hung

IPC分类号： H01L21/365 ,  C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/20 ,  H01L29/24

CPC分类号： C23C16/40 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02107 ,  H01L21/20 ,  H01L29/24

摘要： Provided is a gallium oxide-based semiconductor substrate configured to allow the formation, by HVPE, of a gallium oxide-based epitaxial film having a small film thickness distribution, a small donor concentration distribution, and a low crystal defect density. Also provided are a semiconductor wafer including the semiconductor substrate and the epitaxial film, and a method for manufacturing the semiconductor wafer. As one embodiment, provided is a semiconductor substrate 10 in which at least one main surface thereof is a crystal growth base surface 11. The semiconductor substrate 10 comprises a single crystal of a gallium oxide-based semiconductor. The growth base surface 11 is the (001) plane. In a continuous region of 70 area% or more of the growth base surface 11, the off angle in the [010] direction is in the range from greater than -0.3° to -0.01°, or in the range from 0.01° to smaller than 0.3°. In said region of the growth base surface 11, the off angle in the [001] direction is in the range from -1° to 1°. The diameter of the semiconductor substrate 10 is 2 inches or more.

公开(公告)号：EP4084064A1

公开(公告)日：2022-11-02

申请号：EP20905852.8

申请日：2020-12-21

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： MACHIDA, Nobuo ,  SASAKI, Kohei

IPC分类号： H01L23/50 ,  H01L21/60 ,  H01L29/872

摘要： Provided is a semiconductor device that has, mounted on a lead frame, a vertical semiconductor element which uses a Ga 2 O 3 -based semiconductor as the material of a substrate and epitaxial layer, the semiconductor device being capable of effectively releasing heat from the semiconductor device to the lead frame. As one embodiment, a semiconductor device 1 is provided which comprises: a lead frame 20 that has a projection 200 on the surface; and an SBD 10 that is mounted face down on the lead frame 20 and includes a substrate 11 which is made of a Ga 2 O 3 -based semiconductor, an epitaxial layer 12 which is stacked on the substrate 11 and made of the Ga 2 O 3 -based semiconductor, a cathode electrode 13 which is connected to the substrate 11, and an anode electrode 14 which is connected to the epitaxial layer 12 and has a field plate part 140 on an outer peripheral part. The SBD 10 is fixed on the projection 200, and an outer peripheral part 120 of the epitaxial layer 12 is located right above a flat part 201 of the lead frame 20.