公开(公告)号：EP1065709A4

公开(公告)日：2007-10-31

申请号：EP99949372

申请日：1999-10-22

申请人： ULTRACLEAN TECHNOLOGY RES INST ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  NITTA TAKAHISA

IPC分类号： H01L21/302 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065

CPC分类号： H01L21/67213 ,  H01L21/67167 ,  H01L21/6719

摘要： A semiconductor manufacturing apparatus which can process the surface of a wafer uniformly and requires a small installation floor area and has an excellent maintainability. The apparatus comprises a vacuum enclosure including at least one wafer mounting stage on its bottom plate, and a cylinder surrounding the wafer mounting stage, and at least one cylinder lifting mechanism disposed for each cylinder for moving the cylinder vertically to vary the clearance between the cylinder and the top plate or bottom plate of the vacuum enclosure and for separating the space outside the cylinder constituting a transfer chamber for transferring the wafer from the space inside the cylinder constituting a process chamber for processing the surface of the wafer, wherein the transfer chamber includes a wafer transfer mechanism for transferring the wafer between the process chamber and the transfer chamber through the clearance, the process chamber has a process chamber gas feed port and a process chamber gas exhaust port, and said transfer chamber has a transfer chamber gas feed port and a transfer chamber gas exhaust port.

公开(公告)号：EP1398826A4

公开(公告)日：2006-09-06

申请号：EP02738770

申请日：2002-06-19

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  GOTO TETSUYA

IPC分类号： H01L21/31 ,  C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/3222 ,  H01J37/32192

摘要： Installed in a processing vessel (22) is a mounting block (24) on which a semiconductor wafer (W) is mounted. Microwaves, which are generated by a microwave generator (76), are introduced into a processing vessel (22) through a planar antenna member (66). The planar antenna member (66) has a plurality of slits (84) arranged along a plurality of circumferences, the circumferences forming non-concentric circles. The plasma density distribution in the radial direction of the planar antenna member (66) becomes uniform.

公开(公告)号：EP0709897A4

公开(公告)日：1997-05-28

申请号：EP94903034

申请日：1993-12-21

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  SHIMADA HISAYUKI ,  HIRAYAMA MASAKI

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/316 ,  H01L21/336 ,  H01L23/14 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/49 ,  H01L29/51 ,  H01L29/786 ,  H01L29/772 ,  H01L21/20

CPC分类号： H01L29/513 ,  H01L21/28229 ,  H01L21/316 ,  H01L23/142 ,  H01L27/0688 ,  H01L27/092 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/517 ,  H01L29/66772 ,  H01L29/78618 ,  H01L29/78639 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/00

摘要： This semiconductor device has a large capacity of power driving, and can operate at a high speed. A first semiconductor region of a first conductivity type is formed on a metal substrate through a first insulating film. In the first semiconductor region, first source and drain regions of a second conductivity type are formed. Further, on the region which isolates the first source and drain regions, a first metallic gate electrode is formed through a second insulating film.

摘要翻译： 该半导体器件具有大功率驱动能力，并且可以高速运行。 第一导电类型的第一半导体区域通过第一绝缘膜形成在金属基板上。 在第一半导体区域中，形成第二导电类型的第一源极和漏极区域。 此外，在隔离第一源极和漏极区的区域上，第一金属栅电极通过第二绝缘膜形成。

公开(公告)号：EP1300875A4

公开(公告)日：2006-12-20

申请号：EP02707228

申请日：2002-03-28

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO T ,  HONGOH TOSHIAKI

IPC分类号： H01J37/32 ,  H05H1/46 ,  C23C16/50 ,  C23C16/511 ,  C23F4/00 ,  C30B25/10 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3222 ,  H01J37/32192 ,  H01J37/3244

摘要： A micro wave plasma processing device having a radial line slot antenna capable of suppressing an abnormal discharge to increase the exciting efficiency of micro wave plasma, wherein the tip part of a power supply line in a coaxial wave guide is separated from a slot plate forming a radiating surface at a connection part between the radial line slot antenna and the coaxial wave guide.

公开(公告)号：EP1377138A4

公开(公告)日：2005-04-06

申请号：EP02707231

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA SHIGETOSHI ,  GOTO TETSUYA

IPC分类号： H05H1/00 ,  B01J19/08 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/46

CPC分类号： H01J37/32266 ,  H01J37/32192 ,  H01J37/32954 ,  H01J37/3299

摘要： A micro wave plasma processing device, wherein micro wave is led into a process chamber through a wave guide (26) to generate plasma, the power of the reflected wave reflected by the plasma generated in the process chamber is monitored by a reflection monitor (40) and a power monitor (42), the frequency of the micro wave generated by a magnetron (24) is monitored by an incident monitor (36) and a frequency monitor (48), and a power fed to the magnetron (24) is controlled based on the monitored power and frequency of the reflected wave, whereby the density of the plasma can be controlled at a constant.

公开(公告)号：EP1376670A4

公开(公告)日：2005-04-06

申请号：EP02708713

申请日：2002-03-28

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  SUGAWA S ,  GOTO TETSUYA

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/3244 ,  H01J37/32192 ,  H01J37/32238

摘要： In a microwave plasma-processing device, a shower plate or plasma penetration window opposed to a board to be processed is recessed on the side opposed to the board to be processed, whereby a decrease in plasma density in the peripheral region of the board to be processed is compensated. As a result, even when plasma processing at low pressure, such as etching, is effected, stabilized uniform plasma is maintained in the vicinity of the surface of the board to be processed. Further, such arrangement enhances ignition of plasma.

摘要翻译： 在微波等离子体处理装置中，在与被处理基板相对的一侧凹入与被处理基板相对的喷淋板或等离子体渗透窗，从而使基板周边区域的等离子体密度降低 处理得到补偿。 其结果是，即使进行蚀刻等低压等离子体处理，也能够在被处理基板表面附近维持稳定的均匀的等离子体。 此外，这种布置增强了等离子体的点燃。

公开(公告)号：EP1439571A4

公开(公告)日：2005-09-21

申请号：EP02775374

申请日：2002-10-18

申请人： GOTO NAOHISA ,  OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： GOTO NAOHISA ,  OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  GOTO TETSUYA

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01J37/32229 ,  H01J37/32192

摘要： A microwave plasma processing device, comprising a processing container (12), a microwave generator (24), a wave guide tube (22) for guiding microwave from the microwave generator (24), and a microwave radiating member (19) for radiating the microwave having a wave length shortened by a wave-slowing plate (18) into a space inside the processing container, the wave guide tube (22) further comprising a single microwave output opening (22a) located at the position thereof corresponding to the center portion of the microwave radiating member (19).

公开(公告)号：EP1152646A4

公开(公告)日：2005-03-02

申请号：EP00977871

申请日：2000-11-22

申请人： TOKYO ELECTRON LTD ,  OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI ,  KAIHARA RYUU

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32623 ,  H01J37/32082 ,  H01J37/32587 ,  H01J37/3266 ,  H01J37/32697

摘要： A wafer (101) to be plasma-treated is placed on a first electrode (102). Means (103) applies a magnetic field to the wafer surface to be plasma-treated. In the periphery of the first electrode (102) is arranged an auxiliary electrode (104), on the back (105) of which a plasma is produced. Electrons in the plasma are drifted from the front (106) to back (105) of the auxiliary electrode (104) and vice versa.

公开(公告)号：EP0692926A4

公开(公告)日：1995-09-18

申请号：EP94904322

申请日：1994-01-14

申请人： OHMI TADAHIRO

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI

IPC分类号： H05H1/00

CPC分类号： H01J37/32935 ,  H05H1/0081

摘要： This instrument can measure parameters of a plasma accurately and easily even though the plasma is excited by a high-frequency. The instrument for measuring parameters of a plasma generated in a vacuum chamber by high-frequency discharge at a given frequency comprises a wire (106) for electrically connecting a first electrode (101) arranged in a space where a plasma is produced and a terminal (110) arranged outside the vacuum chamber for taking out signals, and a first insulator (105) so arranged as to cover at least a part of the surface of the wire therewith. The absolute value of the impedance at the given frequency between the first electrode and the ground when looking into the terminal side from the first electrode is five times or more the absolute value of the impedance at the given frequency between the first electrode and the plasma in a state where no direct current flows through the first electrode.

公开(公告)号：EP1626439A4

公开(公告)日：2008-04-16

申请号：EP04733935

申请日：2004-05-19

申请人： OHMI TADAHIRO ,  TOKYO ELECTRON LTD

发明人： OHMI TADAHIRO ,  HIRAYAMA MASAKI

IPC分类号： H01L21/31 ,  H01L21/314 ,  C23C16/02 ,  C23C16/26 ,  H01L21/312 ,  H01L21/316

CPC分类号： H01L21/0212 ,  C23C16/0245 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02315 ,  H01L21/3127

摘要： With a view toward enhancing the adhesion between a fluorinated carbon film and a substratum film, there is provided a method of forming a fluorinated carbon film on a substrate to be treated, characterized in that the method comprises the first step of, by means of a substrate treating unit, effecting plasma excitation of a rare gas and carrying out surface treatment of the substrate with the plasma-excited rare gas and the second step of forming a fluorinated carbon film on the resultant substrate, the substrate treating unit including a microwave antenna electrically connected to a microwave power source.