摘要:
A negative working resist composition comprising (a) an alkali-soluble resin, (b) an aromatic compound having at least two groups of the formula: -OCH₂OR¹ wherein R¹ is alkyl or aralkyl, (c) a photoacid generator, and (d) a solvent, can form fine patterns with high resolution when exposed to deep UV, KrF excimer laser light, etc. due to high light transmittance and high sensitivity.
摘要:
A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
摘要:
A polymer composition comprising (i) a polymer (a) having a monomer unit containing a functional group A which becomes alkali-soluble by heating in the presence of an acid, (ii) a polymer (b) having a monomer unit containing a functional group B which also becomes alkali-soluble, but less easily than the functional group A, by heating in the presence of an acid, and if necessary in addition to (i) and (ii) or in place of (ii), (iii) a phenolic compound having a weight-average molecular weight of 300 to 15,000 gives together with an photoacid generator a resist material suitable for forming a pattern excellent in sensitivity, resolution, mask linearity and other properties.
摘要:
A negative working resist composition comprising (a) an alkali-soluble resin, (b) an aromatic compound having at least two groups of the formula: -OCH₂OR¹ wherein R¹ is alkyl or aralkyl, (c) a photoacid generator, and (d) a solvent, can form fine patterns with high resolution when exposed to deep UV, KrF excimer laser light, etc. due to high light transmittance and high sensitivity.
摘要翻译:一种负性抗蚀剂组合物,其包含(a)碱溶性树脂,(b)具有至少两个下式的-OCH 2 OR 1的芳族化合物,其中R 1是烷基或芳烷基,(c)光酸 发生器和(d)溶剂,由于高透光率和高灵敏度而暴露于深UV,KrF准分子激光等时,可以形成具有高分辨率的精细图案。
摘要:
A resist composition for deep ultraviolet light comprising (a) one of the following resin components (i)-(iii): (i) a resin which becomes alkali-soluble by eliminating protective groups by the action of an acid, (ii) a combination of an alkali-soluble resin and a dissolution-inhibiting compound, and (iii) a combination of an alkali-soluble resin and a crosslinkable compound, (b) an acid generater, (c) a special anthracene derivative, and (d) a solvent, is suitable for forming a pattern using deep ultraviolet light, KrF excimer laser light, etc., on a highly reflective substrate having level differences due to absorption of undesirable reflected deep ultraviolet light.