MEMS DEVICES AND FABRICATION THEREOF
    4.
    发明公开
    MEMS DEVICES AND FABRICATION THEREOF 审中-公开
    MEMS器件及其制造方法

    公开(公告)号:EP2285734A2

    公开(公告)日:2011-02-23

    申请号:EP09746201.4

    申请日:2009-05-06

    Applicant: NXP B.V.

    CPC classification number: B81B3/0086 B81B3/0078 B81B2201/016 B81B2203/0118

    Abstract: A MEMS device and method, comprising: a substrate; a beam; and a cavity located therebetween; the beam comprising a first beam layer and a second beam layer, the first beam layer being directly adjacent to the cavity, the second beam layer being directly adjacent to the first beam layer; the first beam layer comprising a metal or a metal alloy containing silicon; and the second beam layer comprising a metal or a metal alloy substantially not containing silicon. Preferably the second beam layer is thicker than the first beam layer e.g. at least five times thicker, and the first beam layer comprises a metal or alloy containing between 1 % and 2% of silicon. The second beam layer provides desired mechanical and/ or optical properties whilst the first beam layer prevents spiking.

    DISPOSITIF MICROMECANIQUE COMPORTANT UNE POUTRE MOBILE
    5.
    发明授权
    DISPOSITIF MICROMECANIQUE COMPORTANT UNE POUTRE MOBILE 有权
    与移动BAR微机械装置

    公开(公告)号:EP1846320B8

    公开(公告)日:2009-04-08

    申请号:EP06709238.7

    申请日:2006-02-02

    CPC classification number: B81C1/00666 B81B2201/016 B81C2201/0167

    Abstract: The invention relates to a micromechanical device comprising a mobile beam (1), said beam being attached by the two ends (2) thereof to a rigid frame (3) provided with two arms (4) each having two ends (5). The ends (5) of an arm (4) are respectively fixed to the two ends (2) of the mobile beam (1). Each arm (4) has a central part (6) arranged between the two ends (5) of the corresponding arm (4). A rear face of the central part (6) of each arm (4) is attached to a base support (10). The frame (3) comprises at least one stressed element (11) for adjusting the stressed state of the beam. The stressed element (11) can be centred between the front face and the rear face of the corresponding arm (4). The frame (3) can comprise pairs of front and rear stressed elements (11) which are respectively arranged on the front face and the rear face of the arms (4) in such a way that they face each other.

    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES
    7.
    发明授权
    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 有权
    用于生产机电MICRO SWITCH CMOS兼容SUBSTRATES

    公开(公告)号:EP1461828B1

    公开(公告)日:2008-01-23

    申请号:EP02803310.8

    申请日:2002-11-07

    Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    Microsystème électromécanique pouvant basculer entre deux positions stables
    10.
    发明公开
    Microsystème électromécanique pouvant basculer entre deux positions stables 有权
    Mikroelektromechanisches System mit zwei stableen Kipplagen

    公开(公告)号:EP1562207A1

    公开(公告)日:2005-08-10

    申请号:EP05290164.2

    申请日:2005-01-25

    Abstract: Un microsystème électromécanique comprend des éléments conducteurs disjoints, un premier élément déformable électromécaniquement pouvant basculer entre une première et une deuxième positions stables, des éléments de contact permettant la continuité électrique entre les éléments conducteurs disjoints, et des éléments de commande de basculement assurant le basculement du premier élément déformable, de manière à établir une continuité électrique entre les éléments conducteurs disjoints dans la première position stable par contact entre les éléments de contacts et à rompre cette continuité électrique par espacement des éléments de contact dans ladite deuxième position stable. Les éléments conducteurs disjoints ainsi que les éléments de contacts sont portés par le premier élément déformable.

    Abstract translation: 该系统具有梁(111)和电阻单元(121,122,132),以确保梁(110)在打开位置和关闭位置之间的切换。 通过接触臂(151,152)之间的接触,在处于闭合位置的两个不相交的导体(141,142)之间建立电连续性,并且通过使臂处于打开位置而将连续性断开。 打开和关闭位置对应于梁的屈曲位置。

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