公开(公告)号：EP3228584A4

公开(公告)日：2018-07-04

申请号：EP15865926

申请日：2015-07-31

申请人： CSMC TECHNOLOGIES FAB1 CO LTD

发明人： JING ERRONG

IPC分类号： B81C1/00

CPC分类号： B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

摘要： A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate (10), wherein the substrate (10) comprises a first silicon layer (100), a buried oxide layer (200) and a second silicon layer (300) that are laminated sequentially; patterning the first silicon layer (100) and exposing the buried oxide layer (200) to form a rectangular upper electrode plate (120) separated from a peripheral region (140), wherein the upper electrode plate (120) and the peripheral region (140) are connected by only using a cantilever beam (130), and forming, on the peripheral region (140), a recessed portion (110) exposing the buried oxide layer (200); patterning the second silicon layer (300) and exposing the buried oxide layer (200) to form a back cavity (310), wherein the back cavity (310) is located in a region of the second silicon layer (300) corresponding to the upper electrode plate (120), covers 40% to 60% of the area of the region corresponding to the upper electrode plate (120), and is close to one end of the cantilever beam (130); exposing the second silicon layer (300), and suspending the upper electrode plate (120) and the cantilever beam (130); and respectively forming an upper contact electrode (400) and a lower contact electrode (500) on the second silicon layer (300).

公开(公告)号：EP3247134A1

公开(公告)日：2017-11-22

申请号：EP16206878.7

申请日：2016-12-23

申请人： STMicroelectronics S.r.l.

发明人： VARISCO, Igor ,  LAMAGNA, Luca ,  ADORNO, Silvia ,  PERLETTI, Matteo ,  GATTERE, Gabriele ,  VALZASINA, Carlo ,  CONTI, Sebastiano

IPC分类号： H04R19/00 ,  H04R31/00 ,  B81C1/00

CPC分类号： H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C1/00166 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

摘要： A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

摘要翻译： 一种MEMS声换能器（20），其设置有：半导体材料的衬底（21），其具有相对于竖直方向（z）相对的后表面（21b）和前表面（21a）; 形成在所述基板（21）内的从所述背面（21b）延伸到所述前表面（21a）的第一空腔（22）; 设置在所述上​​表面（21a）处并悬挂在所述第一腔体（22）上方并沿其周边锚定到所述基底（21）的膜（23）; 以及包括耦合到所述膜（23）的多个可动电极（29）和耦合到所述衬底（21）并且面向相应的可动电极（29）以形成的多个固定电极（30）的梳状指状电极布置 感测电容器，其中由于入射声压波导致膜（23）的变形导致感测电容器的电容变化（ΔC）。 特别地，梳形电极装置相对于膜（23）垂直放置并且与其平行地延伸。

公开(公告)号：EP3228584A1

公开(公告)日：2017-10-11

申请号：EP15865926.8

申请日：2015-07-31

申请人： CSMC Technologies Fab1 Co., Ltd.

发明人： JING, Errong

IPC分类号： B81C1/00

CPC分类号： B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

摘要： A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate (10), wherein the substrate (10) comprises a first silicon layer (100), a buried oxide layer (200) and a second silicon layer (300) that are laminated sequentially; patterning the first silicon layer (100) and exposing the buried oxide layer (200) to form a rectangular upper electrode plate (120) separated from a peripheral region (140), wherein the upper electrode plate (120) and the peripheral region (140) are connected by only using a cantilever beam (130), and forming, on the peripheral region (140), a recessed portion (110) exposing the buried oxide layer (200); patterning the second silicon layer (300) and exposing the buried oxide layer (200) to form a back cavity (310), wherein the back cavity (310) is located in a region of the second silicon layer (300) corresponding to the upper electrode plate (120), covers 40% to 60% of the area of the region corresponding to the upper electrode plate (120), and is close to one end of the cantilever beam (130); exposing the second silicon layer (300), and suspending the upper electrode plate (120) and the cantilever beam (130); and respectively forming an upper contact electrode (400) and a lower contact electrode (500) on the second silicon layer (300).

摘要翻译： 一种用于制造MEMS扭转静电致动器的方法，包括：提供衬底（10），其中衬底（10）包括第一硅层（100），掩埋氧化物层（200）和第二硅层 依次层压; 图案化第一硅层（100）并暴露掩埋氧化物层（200）以形成与外围区域（140）分离的矩形上电极板（120），其中上电极板（120）和外围区域 ）通过仅使用悬臂梁（130）连接，并且在外围区域（140）上形成暴露掩埋氧化物层（200）的凹陷部分（110）; 图案化第二硅层（300）并暴露掩埋氧化物层（200）以形成后腔（310），其中后腔（310）位于第二硅层（300）的对应于第一硅层 所述电极板120覆盖所述上电极板120对应区域面积的40％〜60％，并靠近所述悬臂梁130的一端。 暴露第二硅层（300），并悬挂上电极板（120）和悬臂梁（130）; 并在第二硅层（300）上分别形成上接触电极（400）和下接触电极（500）。