利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

79 条记录 (耗时 0.017 秒)

    METHOD FOR PRODUCING COMPOSITE WAFER PROVIDED WITH OXIDE SINGLE-CRYSTAL THIN FILM
    2.
    发明公开
    METHOD FOR PRODUCING COMPOSITE WAFER PROVIDED WITH OXIDE SINGLE-CRYSTAL THIN FILM 审中-公开
    生产提供有氧化物单晶薄膜的复合晶片的方法

    公开(公告)号：EP3306644A1

    公开(公告)日：2018-04-11

    申请号：EP16803411.4

    申请日：2016-06-01

    申请人： Shin-Etsu Chemical Co., Ltd.

    发明人： AKIYAMA, Shoji ,  KAWAI, Makoto

    IPC分类号： H01L21/02 ,  H01L21/265 ,  H01L21/425 ,  H01L27/12 ,  H01L41/187 ,  H01L41/312

    CPC分类号： H01L41/335 ,  B32B18/00 ,  B32B37/18 ,  B32B38/0036 ,  B32B38/10 ,  B32B2457/00 ,  C23C14/48 ,  C23C14/5833 ,  C30B29/30 ,  H01L21/02 ,  H01L21/76254 ,  H01L41/1873 ,  H01L41/312 ,  H03H9/02559

    摘要： Provided is a composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, provided is a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90°C or higher at which cracking is not caused; and applying ultrasonic vibration to the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

    摘要翻译： 本发明提供一种在支撑晶片上转印有氧化物单晶膜的复合晶片，所述膜为钽酸锂或铌酸锂膜，并且所述复合晶片不易在所述膜与所述膜之间的层压界面处产生裂纹或剥离 支持晶圆。 更具体而言，提供一种制造复合晶片的方法，包括以下步骤：从氧化物晶片的表面注入氢原子离子或分子离子以在其内部形成离子注入层; 对氧化物晶片的表面和支撑晶片的表面中的至少一个进行表面活化处理; 将表面粘合在一起以获得层压体; 在90℃或更高的温度下对层压体进行热处理，在该温度下不会产生裂纹; 对该热处理层叠体施加超声波振动，使其沿着离子注入层分裂而得到复合晶片。

    Method and apparatus for smoothing surfaces on an atomic scale
    9.
    发明公开
    Method and apparatus for smoothing surfaces on an atomic scale 审中-公开
    对于在原子尺度上的表面平滑化的方法和装置

    公开(公告)号：EP1437424A3

    公开(公告)日：2004-08-18

    申请号：EP03253404.2

    申请日：2003-05-30

    申请人： Veeco Instruments Inc.

    发明人： Kools, Jacques C. S. ,  Devasahayam, Adrian J.

    IPC分类号： C23C14/02 ,  C23C14/22

    CPC分类号： C23C14/5833 ,  C23C14/022 ,  C23F4/00 ,  H01F41/302 ,  H01J37/32357 ,  H01L21/32115

    摘要： A method and an apparatus for smoothing surfaces on an atomic scale. The invention performs smoothing of surfaces by use of a low energy ion or neutral noble gas beam, which may be formed in an ion source or a remote plasma source. The smoothing process may comprise a post-deposition atomic smoothing step (e.g., an assist smoothing step) in a multilayer fabrication procedure. The invention utilizes combinations of relatively low particle energy (e.g., below the sputter threshold of the material) and near normal incidence angles, which achieve improved smoothing of a surface on an atomic scale with substantially no etching of the surface.