公开(公告)号：EP3940772B1

公开(公告)日：2024-07-17

申请号：EP20893357.2

申请日：2020-06-15

IPC分类号： H01L23/485 ,  H01L21/60 ,  H01L23/31

CPC分类号： H01L23/3192 ,  H01L24/13 ,  H01L24/11 ,  H01L2224/1308420130101 ,  H01L2224/040120130101 ,  H01L2224/0555820130101 ,  H01L2224/1301820130101 ,  H01L2224/1301720130101 ,  H01L2224/1301620130101 ,  H01L2224/1190320130101 ,  H01L2224/1314720130101 ,  H01L2224/8181520130101 ,  H01L2224/1014520130101 ,  H01L2224/13120130101 ,  H01L2224/0564720130101 ,  H01L2224/0556820130101 ,  H01L2224/0557220130101 ,  H01L2224/034520130101 ,  H01L2224/0516620130101 ,  H01L2224/0508220130101 ,  H01L2224/1146220130101 ,  H01L2224/114720130101 ,  H01L2224/1183120130101 ,  H01L2224/1315520130101 ,  H01L2224/114520130101 ,  H01L2224/116120130101 ,  H01L2224/0391220130101 ,  H01L2224/036120130101 ,  H01L2224/11920130101 ,  H01L24/03 ,  H01L24/05 ,  H01L24/81 ,  H01L2224/130820130101 ,  H01L2224/1365520130101 ,  H01L2224/1307620130101 ,  H01L2924/384120130101 ,  H01L2924/351120130101 ,  H01L2224/1623720130101 ,  H01L2224/1622720130101 ,  H01L2224/1610520130101 ,  H01L2224/1605720130101 ,  H01L2224/1605820130101 ,  H01L2224/0362220130101 ,  H01L2224/0512420130101 ,  H01L2224/0514720130101 ,  H01L2224/0566620130101 ,  H01L2224/0568420130101 ,  H01L2224/1311120130101 ,  H01L2924/38120130101

公开(公告)号：EP4435152A2

公开(公告)日：2024-09-25

申请号：EP24191899.4

申请日：2017-10-25

申请人： Adeia Semiconductor Technologies LLC

发明人： UZOH, Cyprian, Emeka

IPC分类号： C25D7/12

CPC分类号： H01L24/81 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/1308420130101 ,  H01L2224/1626520130101 ,  H01L2224/1385520130101 ,  H01L2224/1162220130101 ,  H01L2224/1626820130101 ,  H01L2224/1605920130101 ,  H01L24/80 ,  H01L2224/040120130101 ,  H01L2224/055720130101 ,  H01L2224/0560920130101 ,  H01L2224/0561120130101 ,  H01L2224/0561620130101 ,  H01L2224/0562420130101 ,  H01L2224/0563920130101 ,  H01L2224/0564420130101 ,  H01L2224/0564720130101 ,  H01L2224/0565520130101 ,  H01L2224/0568420130101 ,  H01L2224/1146220130101 ,  H01L2224/1146420130101 ,  H01L2224/114720130101 ,  H01L2224/1300720130101 ,  H01L2224/1301920130101 ,  H01L2224/1310520130101 ,  H01L2224/1310920130101 ,  H01L2224/1311120130101 ,  H01L2224/1311620130101 ,  H01L2224/1312420130101 ,  H01L2224/1313920130101 ,  H01L2224/1314420130101 ,  H01L2224/1314720130101 ,  H01L2224/1315520130101 ,  H01L2224/1318420130101 ,  H01L2224/1356220130101 ,  H01L2224/1356420130101 ,  H01L2224/1365520130101 ,  H01L2224/1368420130101 ,  H01L2224/1380920130101 ,  H01L2224/1381120130101 ,  H01L2224/1384720130101 ,  H01L2224/1605820130101 ,  H01L2224/1614820130101 ,  H01L2224/291920130101 ,  H01L2224/8089520130101 ,  H01L2224/8089620130101 ,  H01L2224/8106520130101 ,  H01L2224/8107520130101 ,  H01L2224/8109120130101 ,  H01L2224/8119320130101 ,  H01L2224/8120320130101 ,  H01L2224/818120130101 ,  H01L2224/818420130101 ,  H01L2225/105820130101 ,  H01L2924/1531120130101 ,  H01L2224/810920130101 ,  H01L2224/0556820130101 ,  H01L2224/0391220130101 ,  H01L2224/8109920130101 ,  H01L2224/1100920130101 ,  H01L2225/0651320130101 ,  H01L2224/1650320130101 ,  H01L2224/0300920130101 ,  H01L2224/1380520130101 ,  H01L2224/8108520130101 ,  H01L2224/8035720130101 ,  H01L2224/055820130101 ,  H01L2224/0556220130101 ,  H01L2224/0556420130101 ,  H01L2224/0557120130101 ,  H01L2224/0557220130101 ,  H01L23/552 ,  H01L2224/8385620130101 ,  H01L2224/8386220130101 ,  H01L2224/9212520130101 ,  H01L2224/808120130101 ,  H01L2224/8098620130101 ,  H01L2224/1623720130101 ,  H01L2224/1614720130101 ,  H01L2224/0823720130101 ,  H01L2224/0514720130101 ,  H01L2224/0558220130101 ,  H01L2224/0558320130101 ,  H01L2224/0584720130101 ,  H01L2224/0584420130101 ,  H01L2224/0585520130101 ,  H01L2224/7310420130101 ,  H01L2224/7320420130101 ,  H05K3/4007 ,  H05K3/3436 ,  H05K2201/1024220130101 ,  H01L2224/803420130101 ,  H01L2224/8014120130101 ,  H01L2224/0814520130101 ,  C25D7/123 ,  C25D5/022 ,  C23C18/1653 ,  C25D5/48 ,  C25D5/10 ,  C25D5/18 ,  C25D3/38 ,  C25D5/605 ,  C25D5/12 ,  C23C18/1658

摘要： A bonded structure, comprising a first component including a first substrate having a first dielectric surface and a first conductive feature at the first dielectric surface; and a second component including a second substrate having a second dielectric surface and a second conductive feature at the second dielectric surface. The first dielectric surface is directly bonded to the second dielectric surface without an underfill. The first conductive feature is bonded to second conductive feature by way of a conductive bond region between the first and second conductive features, wherein the bond region comprises structural evidence of conductive nanoparticles employed in bonding the first conductive feature to the second conductive feature.

公开(公告)号：EP3885468B1

公开(公告)日：2024-08-14

申请号：EP19886247.6

申请日：2019-11-19

IPC分类号： C23F1/18 ,  C23F1/02 ,  H01L21/308 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/00

CPC分类号： C23F1/18 ,  H01L21/32134 ,  C23F1/02 ,  H01L21/76898 ,  H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/1302220130101 ,  H01L2224/0361420130101 ,  H01L2224/0516620130101 ,  H01L2224/0564720130101 ,  H01L2224/0507320130101 ,  H01L2224/114720130101 ,  H01L2224/1315520130101 ,  H01L2224/1311120130101 ,  H01L2224/1314420130101 ,  H01L2224/1314720130101 ,  H01L2224/1146220130101 ,  H01L2224/0391220130101 ,  H01L2224/040120130101

公开(公告)号：EP3781729B1

公开(公告)日：2024-09-25

申请号：EP19715960.1

申请日：2019-04-11

IPC分类号： C25D3/32 ,  C25D3/60 ,  H01L21/288 ,  H01L23/00

CPC分类号： H01L24/11 ,  C25D3/32 ,  C25D3/60 ,  H01L2224/1146220130101 ,  H01L2224/1301420130101 ,  H01L2924/1420130101 ,  H01L24/13

公开(公告)号：EP4425542A1

公开(公告)日：2024-09-04

申请号：EP23159311.2

申请日：2023-03-01

申请人： Imec VZW

发明人： DERAKHSHANDEH, Jaber ,  AMANTHAPADMANABHA RAO, Vadiraj Manjunath ,  WAN, Danny ,  BEYNE, Eric ,  DE GREVE, Kristiaan ,  POTOCNIK, Anton

IPC分类号： H01L23/00 ,  H10N69/00

CPC分类号： H10N69/00 ,  H01L24/13 ,  H01L24/11 ,  H01L2224/1146220130101 ,  H01L24/14 ,  H01L2224/140320130101 ,  H01L2224/1450520130101 ,  H01L2224/1451520130101 ,  H01L2224/1310920130101

摘要： According to the invention, superconducting solder bumps (17) are produced on a qubit substrate by electrodeposition. The substrate comprises qubit areas, and superconducting contact pads connected to the qubit areas. First a protection layer is formed on the substrate, and patterned so as to cover at least the qubit areas. Then one or more thin layers are deposited conformally on the patterned protection layer, said thin layers comprising at least a non-superconducting layer suitable for acting as a seed layer for the electrodeposition of the solder bumps. The seed layer is removed locally in areas which lie within the surface area of respective contact pads. This is done by producing and patterning a mask layer, so that openings are formed therein, and by removing the seed layer from the bottom of the openings. The solder bumps are formed by electrodeposition of the solder material on the bottom of said openings. After the formation of the solder bumps, the seed layer and the protection layer are removed.