MEMORY BLOCK MANAGEMENT
    2.
    发明授权

    公开(公告)号:EP2404240B1

    公开(公告)日:2018-07-18

    申请号:EP10749034.4

    申请日:2010-02-24

    CPC classification number: G06F12/0246 G06F2212/7202 G06F2212/7209 G11C29/76

    Abstract: Various embodiments include one or more memory devices having at least two planes of physical blocks organized into super blocks, with each super block including a physical block from each of the at least two planes. Embodiments include determining defective blocks within the planes. If none of the blocks at a particular block position are determined to be defective, embodiments include assigning the blocks at the particular block position to a super block, and if one or more of the blocks at a particular block position are determined to be defective, embodiments include: assigning the blocks at the particular block position determined to be defective to a super block; and assigning a respective replacement block to the super block for each of the one or more blocks at the particular block position determined to be defective. The respective replacement block is selected from a number of blocks within a respective one of the planes that includes the respective block determined to be defective.

    COMPTEUR EN MÉMOIRE FLASH
    3.
    发明公开
    COMPTEUR EN MÉMOIRE FLASH 审中-公开
    闪存计数器

    公开(公告)号:EP3246819A1

    公开(公告)日:2017-11-22

    申请号:EP16198174.1

    申请日:2016-11-10

    Abstract: L'invention concerne un procédé de stockage d'au moins un compteur (Ci) dans une mémoire flash, dans lequel chaque page (Pl) de la mémoire affectée au stockage du ou des compteurs comporte : des données d'entête incluant un premier mot (MD11) destiné à contenir un numéro (1) de la page, un mot (Ci) par compteur pour stocker une première valeur de celui-ci, et un deuxième mot (MD12) destiné à contenir un code de contrôle d'erreur calculé en tenant compte des premières valeurs ; des trames (Fj) ayant toutes un même nombre de mots, chaque trame étant destinée à contenir une valeur indépendante des données de la trame, au moins une occurrence d'un identifiant (i) d'un compteur, chaque trame écrite représentant un incrément ou décrément de la valeur du compteur concerné par rapport à sa première valeur.

    Abstract translation: 本发明涉及一种用于在闪存中存储至少一个计数器(Ci)的方法,其中分配用于存储一个或多个计数器的存储器的每个页面(P1)包括:包括第一字 (MD11),用于保存页面的数量(1),每个计数器用于存储其第一值的字(Ci)以及用于包含计算的错误控制码的第二字(MD12) 考虑到第一个值; 全部具有相同字数的帧(Fj),每个帧意图包含独立于帧数据的值,计数器的标识符(i)的至少一次出现,每个写入帧表示增量 或者将有关计数器的值相对于其第一个值递减。

    MICROCOMPUTER APPARATUS, PROGRAM REWRITING SYSTEM AND REWRITING PROGRAM
    4.
    发明授权
    MICROCOMPUTER APPARATUS, PROGRAM REWRITING SYSTEM AND REWRITING PROGRAM 有权
    微型计算机设备,程序重写系统和重写程序

    公开(公告)号:EP3057101B1

    公开(公告)日:2017-08-30

    申请号:EP16152107.5

    申请日:2016-01-20

    Inventor: SHIZUKA, Satoshi

    Abstract: A first process part controls, based on data of a FLASH status 0 area included in a first block of a flash ROM, a rewriting process including erasing, writing and verifying on blocks of the flash ROM storing a user program to be rewritten based on a description of a user program for rewriting. A second process part carries out the rewriting process without regard to the data of the FLASH status 0 area. The first process part does not carry out writing on the FLASH status 0 area in the rewriting process on the first block of the flash ROM but carries out writing on the FLASH status 0 area based on the description of the user program for rewriting after carrying out the rewriting process on a last block of the flash ROM.

    Abstract translation: 第一处理部分基于闪存ROM的第一块中包括的FLASH状态0区域的数据来控制包括在存储要被重写的用户程序的闪存ROM的块的擦除,写入和验证的重写处理,所述用户程序基于 描述用于重写的用户程序。 第二处理部分执行重写处理而不考虑FLASH状态0区域的数据。 第一处理部分在闪存ROM的第一块上的重写处理中不对FLASH状态0区域进行写入,而是在执行之后基于用于重写的用户程序的描述在FLASH状态0区域上执行写入 闪存ROM的最后一个块的重写过程。

    MICROCOMPUTER APPARATUS, PROGRAM REWRITING SYSTEM AND REWRITING PROGRAM
    6.
    发明公开
    MICROCOMPUTER APPARATUS, PROGRAM REWRITING SYSTEM AND REWRITING PROGRAM 有权
    MIKROCOMPUTERVORRICHTUNG,UMSCHREIBUNGSPROGRAMM的程序设计系统

    公开(公告)号:EP3057101A1

    公开(公告)日:2016-08-17

    申请号:EP16152107.5

    申请日:2016-01-20

    Inventor: SHIZUKA, Satoshi

    Abstract: A first process part controls, based on data of a FLASH status 0 area included in a first block of a flash ROM, a rewriting process including erasing, writing and verifying on blocks of the flash ROM storing a user program to be rewritten based on a description of a user program for rewriting. A second process part carries out the rewriting process without regard to the data of the FLASH status 0 area. The first process part does not carry out writing on the FLASH status 0 area in the rewriting process on the first block of the flash ROM but carries out writing on the FLASH status 0 area based on the description of the user program for rewriting after carrying out the rewriting process on a last block of the flash ROM.

    Abstract translation: 第一处理部分基于闪存ROM的第一块中包括的FLASH状态0区域的数据进行控制,包括擦除,写入和验证存储要被重写的用户程序的闪存ROM的块的重写处理,其基于 描述重写用户程序。 第二处理部分不考虑FLASH状态0区域的数据来执行重写处理。 第一处理部件在闪存ROM的第一块上的重写处理中不对FLASH状态0区域进行写入,但是在执行用于写入的用户程序的描述之后,在FLASH状态0区域上执行写入 闪存ROM的最后一个块上的重写过程。

    ATOMIC WRITE COMMAND SUPPORT IN A SOLID STATE DRIVE
    7.
    发明公开
    ATOMIC WRITE COMMAND SUPPORT IN A SOLID STATE DRIVE 审中-公开
    在固态驱动器中的原子写命令支持

    公开(公告)号:EP2972890A1

    公开(公告)日:2016-01-20

    申请号:EP14768294.2

    申请日:2014-03-12

    Abstract: A method of performing an atomic write command in a data storage device comprising a volatile memory and a plurality of non-volatile memory devices configured to store a plurality of physical pages. The method may comprise storing data in a plurality of logical pages (L-Pages), each associated with a logical address. A logical-to-physical address translation map may be maintained in the volatile memory, and may be configured to enable determination of a physical location, within one or more of the physical pages, of the data referenced by each logical address. The data specified by a received atomic write command may be stored one or more L-Pages. Updates to the entry or entries in the translation map associated with the L-Page(s) storing the data specified by the atomic write command may be deferred until all L-Pages storing data specified by the atomic write command have been written in a power-safe manner.

    Abstract translation: 一种在包括易失性存储器和被配置为存储多个物理页面的多个非易失性存储器设备的数据存储设备中执行原子写入命令的方法。 该方法可以包括将数据存储在多个逻辑页面(L-Pages)中,每个逻辑页面与逻辑地址相关联。 逻辑到物理地址转换映射可以被保存在易失性存储器中,并且可以被配置为使得能够确定每个逻辑地址所引用的数据在一个或多个物理页面内的物理位置。 由接收的原子写入命令指定的数据可以被存储一个或多个L-Pages。 与存储由原子写入命令指定的数据的L-Page关联的转换映射中的一个或多个条目的更新可以被推迟,直到存储由原子写入命令指定的数据的所有L页面已经被写入功率 - 安全的态度。

    Information processing apparatus, control circuit, and control method
    9.
    发明公开
    Information processing apparatus, control circuit, and control method 审中-公开
    信息处理装置,控制电路和控制方法

    公开(公告)号:EP2816482A1

    公开(公告)日:2014-12-24

    申请号:EP14169085.9

    申请日:2014-05-20

    Abstract: An information processing apparatus includes: a storage device that includes a plurality of storage areas; a first counter that counts, among blocks each including a plurality of storage areas included in the storage device, number of transfer candidate blocks including the storage areas in which written data is invalidated; a second counter that counts, among the blocks, number of reserve blocks in which no data is written in the respective storage areas; a determination unit that determines whether transfer processing is to be started in accordance with a result of comparing a count value of the first counter with a count value of the second counter; and a transfer unit that transfers only valid data written in the respective storage areas of the transfer candidate block to the reserve block when the determination unit determines that the transfer processing is to be started.

    Abstract translation: 一种信息处理设备包括:存储装置,其包括多个存储区域; 第一计数器,在包括存储装置中包括的多个存储区域的块中,计数包括其中写入数据被无效的存储区域的传送候选块的数量; 第二计数器,用于在块中计数其中没有数据写入各个存储区中的预留块的数量; 确定单元,其根据将所述第一计数器的计数值与所述第二计数器的计数值进行比较的结果来确定是否开始传送处理; 以及传送单元,当确定单元确定要开始传送处理时,仅将传送候选块的相应存储区中写入的有效数据传送到保留块。

    Method and system for recovery of metadata in a flash memory system
    10.
    发明公开
    Method and system for recovery of metadata in a flash memory system 有权
    Verfahren und System zur Widergewinnung von Metadata eines Flash-Speicher-Systems

    公开(公告)号:EP2793132A2

    公开(公告)日:2014-10-22

    申请号:EP14166928.3

    申请日:2008-11-19

    Abstract: A system and method for managing the storage of data in non-volatile memory is described. In an aspect, the data may be described by metadata and a transaction log file that are checkpointed from a volatile memory into the non-volatile memory. Actions that take place between the last checkpointing of a metadata segment and log file segment are discovered by scanning the non-volatile memory blocks, taking account of a record of the highest sector in each block that is known to have been recorded. Any later transactions are discovered and used to update the recovered metadata so that the metadata correctly represents the stored data.

    Abstract translation: 描述用于管理非易失性存储器中的数据的存储的系统和方法。 在一方面,数据可以由元数据和从易失性存储器检查到非易失性存储器的事务日志文件来描述。 通过扫描非易失性存储器块来考虑在元数据段的最后检查点和​​日志文件段之间发生的操作,考虑到每个块中已知已被记录的最高扇区的记录。 任何后来的事务被发现并用于更新恢复的元数据,以便元数据正确地表示存储的数据。

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