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6 条记录 (耗时 0.009 秒)

    POLISHING SOLUTION FOR CMP AND METHOD OF POLISHING
    1.
    发明公开
    POLISHING SOLUTION FOR CMP AND METHOD OF POLISHING 审中-公开
    抛光液的CMP及研磨方法

    公开(公告)号：EP1936673A4

    公开(公告)日：2011-01-05

    申请号：EP06811509

    申请日：2006-10-10

    申请人： HITACHI CHEMICAL CO LTD

    发明人： SHINODA TAKASHI ,  NOBE SHIGERU ,  SAKURADA TAKAFUMI ,  OOMORI YOSHIKAZU ,  KIMURA TADAHIRO

    IPC分类号： H01L21/321 ,  B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304

    CPC分类号： C09G1/02 ,  C23F3/04 ,  H01L21/30625 ,  H01L21/31055 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76865

    摘要： The invention provides polishing slurry for CMP for suppressing corrosion of wiring lines of a conductive substance, or for suppressing bimetallic corrosion of a barrier conductor and conductive substance, by suppressing electrons from being transferred at near the boundaries between a barrier conductor and a conductive substance such as copper. The invention provides polishing slurry for CMP for polishing at least a conductor layer and a conductive substance layer in contact with the conductor layer, wherein the absolute value of the potential difference between the conductive substance and the conductor at 50 ± 5°C is 0.25 V or less in the polishing slurry when a positive electrode and a negative electrode of a potentiometer are connected to the conductive substance and the conductor, respectively. The polishing slurry for CMP preferably comprises at least one compound selected from heterocyclic compounds containing any one of hydroxyl group, carbonyl group, carboxyl group, amino group, amide group and sulfinyl group, and containing at least one of nitrogen and sulfur atoms.

    COMPOSITION, METHODS OF FORMING LOW-PERMITTIVITY FILM FROM THE COMPOSITION, LOW-PERMITTIVITY FILM, AND ELECTRONIC PART HAVING THE LOW-PERMITTIVITY FILM
    3.
    发明公开
    COMPOSITION, METHODS OF FORMING LOW-PERMITTIVITY FILM FROM THE COMPOSITION, LOW-PERMITTIVITY FILM, AND ELECTRONIC PART HAVING THE LOW-PERMITTIVITY FILM 审中-公开
    组成，工艺生产具有这种组合物的低传输，低渗透电子零件与低渗透性的薄膜薄膜薄膜

    公开(公告)号：EP1236772A4

    公开(公告)日：2005-03-23

    申请号：EP00961015

    申请日：2000-09-14

    申请人： HITACHI CHEMICAL CO LTD

    发明人： NARITA TAKENORI ,  MORISIMA HIROYUKI ,  NOBE SHIGERU ,  ENOMOTO KAZUHIRO ,  SAKURAI HARUAKI ,  TERADA NOBUKO

    IPC分类号： B05D7/24 ,  C08L101/00 ,  C09D183/04 ,  C09D201/00 ,  C08L83/04

    CPC分类号： C08L33/00 ,  C08L31/04 ,  C08L33/12 ,  C08L83/04 ,  C08L101/00 ,  C09D183/04 ,  C09D201/00 ,  H01L2924/0002 ,  C08L83/00 ,  C08L2666/04 ,  C08L2666/14 ,  H01L2924/00

    摘要： The present invention provides a composition comprising (a) a thermally decomposable polymer and (b) a siloxane oligomer evenly dissolved in (c) an organic solvent; a composition comprising (a) a thermally decomposable polymer, (b) a siloxane oligomer, and (c)' an organic solvent in which both of the ingredients (a) and (b) are soluble; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith and then heating the resulting film to condense the siloxane oligomer and remove the thermally decomposable polymer; a method for forming a low-permittivity film characterized by applying the composition to a substrate to form a composite film comprising the thermally decomposable polymer and the siloxane oligomer evenly compatibilized therewith, subsequently conducting a first heating step in which the siloxane oligomer is crosslinked while keeping the thermally decomposable polymer remaining in the film, and then conducting a second heating step in which the thermally decomposable polymer is removed; a low-permittivity film formed by either of the methods for low-permittivity film formation; and an electronic part having the low-permittivity film.

    摘要翻译： 本发明提供一种组合物，其包含（a）一种可热分解的聚合物和（b）硅氧烷低聚物（c）中，以有机溶解均匀溶剂; 的组合物，其包含（a）一种可热分解的聚合物，（b）一种硅氧烷低聚物，和（c）“，其中的有机溶剂这两种成分（a）和（b）是可溶的; 用于形成低电容率通过将组合物施加到基底以形成膜表征的方法的复合膜，其包括可热分解的聚合物和硅氧烷低聚物，它有均匀相容那里，然后加热所得到的电影以冷凝硅氧烷低聚物和除去可热分解的 聚合物; 用于形成低电容率通过将组合物施加到基底以形成膜表征的方法的复合膜，其包括可热分解的聚合物和硅氧烷低聚物，它有均匀相容那里，随后进行第一加热步骤，其中硅氧烷低聚物被交联，同时保持 热分解的聚合物留在薄膜中，然后进行，其中，热分解的聚合物被除去的第二加热步骤; 低介电常数膜形成由低介电常数膜形成的方法中任一; 和电子部件具有低电容率的电影。