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    PIEZOELECTRIC OSCILLATION DEVICE, METHOD FOR MANUFACTURING A PIEZOELECTRIC OSCILLATION DEVICE, AND ETCHING METHOD OF STRUCTURAL COMPONENTS FORMING A PIEZOELECTRIC OSCILLATION DEVICE
    4.
    发明公开
    PIEZOELECTRIC OSCILLATION DEVICE, METHOD FOR MANUFACTURING A PIEZOELECTRIC OSCILLATION DEVICE, AND ETCHING METHOD OF STRUCTURAL COMPONENTS FORMING A PIEZOELECTRIC OSCILLATION DEVICE 审中-公开
    压电振动，制造方法压电振动和蚀刻结构件具有压电振荡MAKE

    公开(公告)号：EP2381575A1

    公开(公告)日：2011-10-26

    申请号：EP09834925.1

    申请日：2009-12-24

    申请人： Daishinku Corporation

    发明人： KOHDA, Naoki ,  YOSHIOKA, Hiroki

    IPC分类号： H03H9/02 ,  H01L23/02 ,  H03H3/02

    CPC分类号： H01L41/332 ,  B01D2325/02 ,  C23C8/40 ,  C23C12/00 ,  H01L23/3731 ,  H01L23/3732 ,  H01L23/3733 ,  H01L31/18 ,  H01L31/1804 ,  H01L41/23 ,  H01L41/25 ,  H01L41/29 ,  H01L41/33 ,  H01L2924/0002 ,  H03H3/02 ,  H03H9/0547 ,  H03H9/0552 ,  H03H9/1035 ,  H03H9/19 ,  H03H2003/045 ,  H03H2003/0457 ,  Y10T29/42 ,  H01L2924/00

    摘要： A piezoelectric resonator device includes a piezoelectric resonator plate where an excitation electrode is formed, and an upper lid member and a lower lid member that hermetically seal the excitation electrode, the piezoelectric resonator plate having a joining region where the upper lid member is joined and a joining region where the lower lid member is joined, on front and back main surfaces, the upper lid member having a joining region on one main surface where the piezoelectric resonator plate is joined, and the lower lid member having a joining region on one main surface where the piezoelectric resonator plate is joined. A joining material is formed on each of the joining region of the piezoelectric resonator plate, the joining region of the upper lid member, and the joining region of the lower lid member. The joining region of the piezoelectric resonator plate and the joining region of the upper lid member are joined to each other via a joining material, and the joining region of the piezoelectric resonator plate and the joining region of the lower lid member are joined to each other via a joining material. At least one of a substrate of the joining region of the piezoelectric resonator plate, a substrate of the joining region of the upper lid member, and a substrate of the joining region of the lower lid member has a roughened surface.

    摘要翻译： 一种压电谐振装置包括：压电振动片，其中在激励电极上形成，并且在上盖构件和下盖构件并密封所述激励电极，具有在上部盖构件接合的接合区域和所述压电振动板 接合，其中所述下盖构件接合，在正面和背面的主表面区域，一个主表面上具有接合区域的上盖构件，其中所述压电振动板接合，并具有在一个主表面的接合区域中的下盖构件 其中所述压电振动板接合。 的接合材料被形成在每个压电谐振器板，所述上盖构件的接合区域和所述下盖构件的接合区域的接合区域的。 所述压电振动板的接合区域和所述上盖构件的接合区域经由接合材料彼此接合，和压电谐振器板的接合区域和所述下盖构件的接合区域接合到海誓山盟 经由接合材料。 至少所述压电振动板的接合区域的基板中的一个，所述上盖构件的接合区域的基片和所述下盖构件的接合区域的衬底具有粗糙的表面。

    Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same
    5.
    发明公开
    Thin film piezoelectric bulk acoustic wave resonator and radio frequency filter using the same 审中-公开
    PiezoelektrischerDünnfilm-Volumenwellenresonator und Hochfrequenzfilter damit

    公开(公告)号：EP1887689A1

    公开(公告)日：2008-02-13

    申请号：EP07002097.9

    申请日：2007-01-31

    申请人： Hitachi Media Electronics Co., Ltd.

    发明人： Isobe, Atsushi, c/o Hitachi, Ltd., IP Group ,  Asai, Kengo, c/o Hitachi, Ltd., IP Group ,  Matsumoto, Hisanori, c/o Hitachi, Ltd., IP Group ,  Shibagaki, Nobuhiko, c/o Hitachi, Ltd., IP Group

    IPC分类号： H03H9/17 ,  H03H9/13 ,  H03H9/02 ,  H03H9/56

    CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/173 ,  H03H9/175 ,  H03H9/564 ,  H03H9/568 ,  H03H9/605 ,  H03H2003/0428 ,  H03H2003/0457 ,  H03H2003/0471

    摘要： An object of the present invention is to provide an inexpensive thin film piezoelectric bulk acoustic wave resonator that allows fine-tuning of a resonant frequency. A thin film piezoelectric bulk acoustic wave resonator of the present invention has a laminated structure including a piezoelectric thin film (5), and a first metal electrode film (3) and a second metal electrode film (4) between which part of the piezoelectric thin film (5) is sandwiched; the first metal electrode film (3) has a plurality of holes (7) formed on an electrode plane opposite to the second metal electrode film (4) and having a depth equivalent to at least the thickness of the first metal electrode film (3); and if a combined thickness of top and bottom electrode layers (3,4) and the piezoelectric thin film (5) is ht, the covering ratio (σ) of the electrode plane of the first metal electrode film (3) satisfies a condition 0

    摘要翻译： 本发明的目的是提供一种廉价的薄膜压电体声波谐振器，其允许谐振频率的微调。 本发明的薄膜压电体声波谐振器具有包括压电薄膜（5）和第一金属电极薄膜（3）和第二金属电极薄膜（4）的叠层结构，其中压电薄膜 薄膜（5）夹在中间; 第一金属电极膜（3）具有形成在与第二金属电极膜（4）相反的电极面上并具有至少等于第一金属电极膜（3）的厚度的深度的多个孔（7） ; 并且如果顶部和底部电极层（3,4）和压电薄膜（5）的组合厚度为ht，则第一金属电极膜（3）的电极平面的覆盖比（¡）满足条件0 每1.28 ht的距离<Ã<1。

    Bulk acoustic wave resonator, bulk acoustic wave filter and their corresponding methods of manufacture
    6.
    发明公开
    Bulk acoustic wave resonator, bulk acoustic wave filter and their corresponding methods of manufacture 审中-公开
    Volumenschallwellenresonator，Volumenschallwellenfilter und entsprechende Verfahren zur Herstellung。

    公开(公告)号：EP2439844A2

    公开(公告)日：2012-04-11

    申请号：EP11167021.2

    申请日：2011-05-23

    申请人： RichWave Technology Corp.

    发明人： Mao, Shau-Gang ,  Deng, Wei-Kung

    IPC分类号： H03H3/04 ,  H03H9/13 ,  H03H9/58 ,  H03H9/02

    CPC分类号： H03H9/02228 ,  H03H3/04 ,  H03H9/132 ,  H03H9/584 ,  H03H2003/0457 ,  Y10T29/42

    摘要： A bulk acoustic wave (BAW) resonator (38) includes a substrate (30), and two electrodes (32, 36) stacked on the substrate (30), and at least one piezoelectric layer (34) interposed between the two electrodes (32, 36). The two electrodes (32, 36) and the piezoelectric layer (34) are at least partially overlapped with each other in a vertical projection direction, and one of the two electrodes (32, 36) has a plurality of openings (32A, 36A).

    摘要翻译： 体积声波（BAW）谐振器（38）包括衬底（30）和堆叠在衬底（30）上的两个电极（32,36）以及置于两个电极（32）之间的至少一个压电层（34） ，36）。 两个电极（32,36）和压电层（34）在垂直投影方向上至少部分地彼此重叠，并且两个电极（32,36）中的一个具有多个开口（32A，36A） 。