公开(公告)号：EP3731728B1

公开(公告)日：2024-09-25

申请号：EP18897089.1

申请日：2018-12-27

IPC分类号： A61B1/06 ,  A61B5/00 ,  A61B18/20 ,  A61B18/22 ,  A61B18/24 ,  A61B1/04 ,  A61B1/05 ,  G01J3/02 ,  G01J3/10 ,  G01J3/28 ,  G01J3/32 ,  G01J3/36 ,  G01J3/433 ,  G01J3/50 ,  G01J3/51

CPC分类号： A61B1/0638 ,  A61B1/00006 ,  A61B1/043 ,  A61B1/045 ,  A61B1/05 ,  A61B1/051 ,  G01J3/0208 ,  G01J3/021 ,  G01J3/0218 ,  G01J3/0232 ,  G01J3/0235 ,  G01J3/0264 ,  G01J3/027 ,  G01J3/10 ,  G01J2003/10220130101 ,  G01J2003/121320130101 ,  G01J3/2823 ,  G01J2003/282620130101 ,  G01J3/32 ,  G01J3/36 ,  G01J3/433 ,  G01J2003/433420130101 ,  G01J3/501 ,  G01J3/513 ,  A61B1/0655 ,  H04N23/56 ,  H04N23/555 ,  H04N23/45 ,  H04N23/741 ,  H04N23/74 ,  H04N25/533 ,  H04N23/125 ,  H04N25/532 ,  H04N25/135

公开(公告)号：EP3840364B1

公开(公告)日：2024-09-04

申请号：EP21156027.1

申请日：2016-11-11

IPC分类号： H04N25/60 ,  H04N25/709 ,  H04N25/76

CPC分类号： H01L27/14669 ,  H01L27/14612 ,  H04N25/531 ,  H04N25/709 ,  H04N25/76 ,  H10K39/32 ,  H10K85/311 ,  H04N25/532 ,  H04N25/62

公开(公告)号：EP4429262A2

公开(公告)日：2024-09-11

申请号：EP24190879.7

申请日：2016-11-11

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： MIYAKE, Yasuo ,  MURAKAMI, Masashi ,  TAMAKI, Tokuhiko ,  SATOU, Yoshiaki

IPC分类号： H04N25/76

CPC分类号： H01L27/14669 ,  H01L27/14612 ,  H04N25/531 ,  H04N25/709 ,  H04N25/76 ,  H10K39/32 ,  H10K85/311 ,  H04N25/532 ,  H04N25/62

摘要： An imaging device includes: unit pixel cells each including a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and second electrode, a charge accumulation region electrically connected to the first electrode, and a signal detection circuit electrically connected to the charge accumulation region; and a voltage supply circuit electrically connected to the second electrode, the voltage supply circuit supplying a first voltage to the second electrode in an exposure period that is a period for accumulating charges generated by photoelectric conversion in the charge accumulation region, the voltage supply circuit supplying a second voltage that is different from the first voltage to the second electrode in a non-exposure period. The start and end of the exposure period is common to the unit pixel cells.

公开(公告)号：EP3562147B1

公开(公告)日：2024-08-07

申请号：EP19165461.5

申请日：2019-03-27

IPC分类号： H04N25/772 ,  G01J1/44

CPC分类号： G01J2001/44220130101 ,  H04N25/773 ,  H04N25/532

公开(公告)号：EP4443117A2

公开(公告)日：2024-10-09

申请号：EP24186794.4

申请日：2018-06-26

申请人： Meta Platforms Technologies, LLC

发明人： Liu, Xinqiao

IPC分类号： G01J1/44 ,  H03K5/24 ,  G01J1/42 ,  H01L27/146

CPC分类号： G01J2001/44620130101 ,  G01J1/44 ,  G01J2001/44820130101 ,  G01J1/4228 ,  H01L27/1465 ,  H01L27/1461 ,  H01L27/1464 ,  H01L27/14636 ,  H04N25/575 ,  H04N25/772 ,  H04N25/79 ,  H04N25/532 ,  H04N25/78

摘要： Examples of a pixel cell are disclosed. In one example, a pixel cell may include a first semiconductor layer including a photodiode and one or more transistor devices configured to convert charges generated by the photodiode into an analog signal. The pixel cell may also include a second semiconductor layer including one or more transistor devices configured to convert the analog signal to one or more digital signals. The first semiconductor layer and the second semiconductor layer may form a stack structure. In another example, a pixel cell may include a photodiode and a capacitor. The pixel cell may be operated, in a first mode of measurement, to measure the charges stored at the capacitor when the capacitor is electrically coupled with the photodiode, and in a second mode of measurement, to measure the charges stored at the capacitor when the capacitor is electrically isolated from the photodiode.

公开(公告)号：EP4418675A3

公开(公告)日：2024-10-02

申请号：EP24182889.6

申请日：2018-08-22

申请人： Sony Semiconductor Solutions Corporation

发明人： YASU, Yohtaro ,  HANZAWA, Katsuhiko

IPC分类号： H01L27/146 ,  H04N25/532 ,  H04N25/671 ,  H04N25/779 ,  H04N25/78 ,  H04N25/79 ,  H04N25/76 ,  G01S7/4863

CPC分类号： G01S7/4863 ,  H01L27/14634 ,  H01L27/14636 ,  H04N25/79 ,  H04N25/7795 ,  H04N25/532 ,  H04N25/779 ,  H04N25/78 ,  H04N25/671

摘要： A sensor chip includes: a pixel array unit that has a rectangular-shaped area in which a plurality of sensor elements are arranged in an array pattern; and a global control circuit, in which driving elements simultaneously driving the sensor elements are arranged in one direction, and each of the driving elements is connected to a control line disposed for each one column of the sensor elements, that is arranged to have a longitudinal direction to be along a long side of the pixel array unit. For example, the present technology can be applied to ToF sensor.

公开(公告)号：EP4418675A2

公开(公告)日：2024-08-21

申请号：EP24182889.6

申请日：2018-08-22

申请人： Sony Semiconductor Solutions Corporation

发明人： YASU, Yohtaro ,  HANZAWA, Katsuhiko

IPC分类号： H04N25/71

CPC分类号： G01S7/4863 ,  H01L27/14634 ,  H01L27/14636 ,  H04N25/79 ,  H04N25/7795 ,  H04N25/532 ,  H04N25/779 ,  H04N25/78 ,  H04N25/671

摘要： A sensor chip includes: a pixel array unit that has a rectangular-shaped area in which a plurality of sensor elements are arranged in an array pattern; and a global control circuit, in which driving elements simultaneously driving the sensor elements are arranged in one direction, and each of the driving elements is connected to a control line disposed for each one column of the sensor elements, that is arranged to have a longitudinal direction to be along a long side of the pixel array unit. For example, the present technology can be applied to ToF sensor.