SILICON NITRIDE SINTERED SUBSTRATE
    2.
    发明公开

    公开(公告)号:EP4174020A1

    公开(公告)日:2023-05-03

    申请号:EP21833222.9

    申请日:2021-06-29

    摘要: The present invention provides a silicon nitride sintered substrate capable of reducing contamination caused by a boron nitride powder or the like used as a releasing agent and problems in bonding strength and dielectric strength at the time of laminating metal layers or the like, where the contamination is caused by a network structure provided by a silicon nitride crystal formed on the surface of the substrate in an unpolished state after sintering a silicon nitride powder. The silicon nitride substrate in an unpolished state after sintering is a silicon nitride sintered substrate where a cumulative volume of pores having a diameter in a range of 1 to 10 µm is not more than 7.0 × 10 -5 mL/cm 2 in a measurement by a mercury porosimetry. Preferably, Ra of the surface is not more than 0.6 µm and arithmetic mean peak curvature (Spc) of a peak is not more than 4.5 [1/mm] .