利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

651 条记录 (耗时 0.021 秒)

    MULTILAYER FILM STRUCTURE AND PRODUCTION METHOD THEREFOR
    1.
    发明公开
    MULTILAYER FILM STRUCTURE AND PRODUCTION METHOD THEREFOR 审中-公开

    公开(公告)号：EP4321659A1

    公开(公告)日：2024-02-14

    申请号：EP22784653.2

    申请日：2022-04-01

    申请人： Tosoh Corporation

    发明人： UEOKA, Yoshihiro ,  SUEMOTO, Yuya ,  MESUDA, Masami

    IPC分类号： C30B29/38 ,  C23C14/06 ,  C30B25/06 ,  H01L21/20 ,  H01L21/203 ,  H01L33/32

    摘要： An object is to provide at least one of a multilayer film structure having high crystallinity and high flatness and a method for producing the multilayer film structure and is further to provide at least one of a multilayer film structure that includes a SiC substrate and a nitride-based film formed on the substrate by a sputtering process and that can be applied to power devices and a method for producing the multilayer film structure. A multilayer film structure includes a SiC substrate and a film disposed on the SiC substrate and containing a nitride-based material at least containing Ga, wherein the multilayer film structure has an off-angle of 0.03° or more and 8° or less with respect to a Silicon face of a (0001) plane of a SiC single crystal forming the SiC substrate and the film containing the nitride-based material has a C content of 2 × 10 19 atoms/cm 3 or less and a Cl content of 2 × 10 18 atoms/cm 3 or less.

    SIC SUBSTRATE PRODUCTION METHOD
    2.
    发明公开
    SIC SUBSTRATE PRODUCTION METHOD 审中-公开

    公开(公告)号：EP4012077A1

    公开(公告)日：2022-06-15

    申请号：EP20849437.7

    申请日：2020-08-05

    申请人： Kwansei Gakuin Educational Foundation ,  Toyota Tsusho Corporation

    发明人： KANEKO, Tadaaki ,  KOJIMA, Kiyoshi

    IPC分类号： C30B29/36 ,  C30B25/20 ,  C30B33/12 ,  H01L21/203 ,  H01L21/205 ,  H01L21/304

    摘要： The present invention addresses the problem of providing a novel SiC substrate production method. The SiC substrate production method according to the present invention comprises an etching step S10 of etching a SiC base substrate 10, a crystal growth step S20 of growing a SiC substrate layer 13 on the SiC base substrate 10 to produce a SiC substrate body 20, and a peeling step S30 of peeling at least a portion of the SiC substrate body 20 to produce a SiC substrate 30, the method being characterized in that each of the etching step S10 and the crystal growth step S20 is a step of arranging the SiC base substrate 10 and a SiC material 40 so as to face each other and heating the SiC base substrate 10 and the SiC material 40 so as to form a temperature gradient between the SiC base substrate 10 and the SiC material 40.

    PHOTONIC INTEGRATED CIRCUIT WITH SPUTTERED SEMICONDUCTOR MATERIAL
    5.
    发明公开
    PHOTONIC INTEGRATED CIRCUIT WITH SPUTTERED SEMICONDUCTOR MATERIAL 审中-公开

    公开(公告)号：EP3859413A1

    公开(公告)日：2021-08-04

    申请号：EP21154002.6

    申请日：2021-01-28

    申请人： Viavi Solutions Inc.

    发明人： HOUCK, William D. ,  BILGER, Markus

    IPC分类号： G02B6/12 ,  G02B6/13 ,  G02B6/136 ,  H01L21/02 ,  H01L21/203 ,  C23C14/34 ,  C23C14/35 ,  G02B6/132

    摘要： A sputtering system may inject hydrogen and a sputtering gas into a chamber of the sputtering system, which may cause at least one layer of a hydrogenated semiconductor material, such as hydrogenated silicon (Si:H), to be sputtered onto a substrate disposed in the chamber until the at least one layer has a thickness that satisfies a threshold. In some implementations, the hydrogen and the sputtering gas may be injected into the chamber of the sputtering system while a temperature in the chamber is in a range from 145 degrees Celsius to 165 degrees Celsius. Accordingly, in some implementations, the sputtered layer of the hydrogenated semiconductor material may have one or more optical properties that satisfy a threshold to enable operation in a 9xx nanometer wavelength regime and at larger wavelengths.