-
公开(公告)号：EP2197782A1
公开(公告)日：2010-06-23
申请号：EP08794128.2
申请日：2008-09-10
申请人： Smoltek AB
IPC分类号： B82B1/00 , B82B3/00 , C23C16/22 , H01L21/285 , H01L21/768 , H01L23/52 , H01L23/538
摘要： An apparatus, comprising two conductive surfaces or layers and a nanostructure assembly bonded to the two conductive surfaces or layers to create electrical or thermal connections between the two conductive surfaces or layers, and a method of making same.
-
公开(公告)号：EP1945840B1
公开(公告)日：2017-03-08
申请号：EP06850481.0
申请日：2006-08-28
申请人： Smoltek AB
IPC分类号： D01F9/127 , D01F9/08 , H01L51/00 , H01L21/04 , H01L23/373 , C01B32/15 , C23C16/04 , C23C16/26 , H01J1/304 , H01J3/02 , H01J9/02
CPC分类号： B82Y30/00 , B01J23/755 , B01J23/76 , B82Y10/00 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J2201/30469 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L51/0048 , H01L51/0052 , H01L2221/1089 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
-
3.发明公开HIGH ASPECT RATIO TEMPLATE FOR LITHOGRAPHY, METHOD OF MAKING THE SAME TEMPLATE AND USE OF THE TEMPLATE FOR PERFORATING A SUBSTRATE AT NANOSCALE 审中-公开原有的高宽比光刻，方法生产该文件，并使用该模板射孔ON纳米尺度A SUBSTRATE
公开(公告)号：EP2307928A2
公开(公告)日：2011-04-13
申请号：EP09777381.6
申请日：2009-07-23
申请人： Smoltek AB
发明人： MUHAMMAD, Amin Saleem , BRUD, David , BERG, Jonas , KABIR, Mohammad, Shafiqul , DESMARIS, Vincent
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/932
摘要： Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.
-
公开(公告)号：EP2197782B1
公开(公告)日：2020-03-04
申请号：EP08794128.2
申请日：2008-09-10
申请人： Smoltek AB
IPC分类号： B82B1/00 , B82B3/00 , H01L21/60 , H01L23/488 , H01L23/498 , H01L21/58 , C23C16/22
-
5.发明公开DEPOSITION AND SELECTIVE REMOVAL OF CONDUCTING HELPLAYER FOR NANOSTRUCTURE PROCESSING 审中-公开主席团成员辅助层纳米结构加工中的应用及选择性脱除
公开(公告)号：EP2250661A1
公开(公告)日：2010-11-17
申请号：EP09715679.8
申请日：2009-02-20
申请人： Smoltek AB
IPC分类号： H01L21/18 , H01L21/203 , H01L21/302 , H01L21/3205 , H01L29/06 , H01L51/00 , H01L21/363
CPC分类号： C23C16/26 , B82Y10/00 , B82Y40/00 , C01B32/15 , C23C16/503 , G02B6/26 , H01B13/0026 , H01L21/0237 , H01L21/02491 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/4871 , H01L21/76802 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/3677 , H01L23/3737 , H01L23/49827 , H01L23/5226 , H01L23/53276 , H01L29/0665 , H01L29/66439 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
-
6.发明公开INTERCONNECTS AND HEAT DISSIPATORS BASED ON NANOSTRUCTURES 有权NANOSTRUKTUR-ENTHALTENDE INTEGRIERTE SCHALTUNG
公开(公告)号：EP1945840A2
公开(公告)日：2008-07-23
申请号：EP06850481.0
申请日：2006-08-28
申请人： Smoltek AB
IPC分类号： D01F9/127 , D01F9/08 , H01L51/00 , H01L21/04 , H01L23/373 , C01B31/02 , C23C16/04 , C23C16/26 , H01J1/304 , H01J3/02 , H01J9/02
CPC分类号： B82Y30/00 , B01J23/755 , B01J23/76 , B82Y10/00 , D01F9/08 , D01F9/127 , H01B1/04 , H01J1/304 , H01J2201/30469 , H01L21/76876 , H01L21/76885 , H01L23/53276 , H01L51/0048 , H01L51/0052 , H01L2221/1089 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides for nanostnictures grown on a conducting or insulating substrate, and a method of making the same. The nanostructures grown according to the claimed method are suitable for interconnects and/or as heat dissipators in electronic devices.
摘要翻译： 本发明提供在导电或绝缘基板上生长的纳米图案及其制造方法。 根据所要求保护的方法生长的纳米结构适用于电子设备中的互连和/或散热器。
-
公开(公告)号：EP2250661B1
公开(公告)日：2020-04-08
申请号：EP09715679.8
申请日：2009-02-20
申请人： Smoltek AB
IPC分类号： H01L21/18 , H01L21/203 , H01L21/302 , H01L21/3205 , H01L29/06 , H01L21/363 , B82Y40/00 , B82Y10/00 , C01B32/15 , C23C16/26 , C23C16/503
-
8.发明授权CONTROLLED GROWTH OF A NANOSTRUCTURE ON A SUBSTRATE, AND ELECTRON EMISSION DEVICES BASED ON THE SAME 有权在基底上，应根据电子发射器件的纳米结构的控制生长
公开(公告)号：EP1874986B1
公开(公告)日：2013-01-23
申请号：EP06733343.5
申请日：2006-04-25
申请人： Smoltek AB
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
-
9.发明公开CONTROLLED GROWTH OF A NANOSTRUCTURE ON A SUBSTRATE, AND ELECTRON EMISSION DEVICES BASED ON THE SAME 有权在基底上，应根据电子发射器件的纳米结构的控制生长
公开(公告)号：EP1874986A1
公开(公告)日：2008-01-09
申请号：EP06733343.5
申请日：2006-04-25
申请人： Smoltek AB
CPC分类号： C23C16/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/34 , C01B2202/36 , C23C16/26 , D01F9/08 , D01F9/127 , H01J1/304 , H01J3/022 , H01J9/025 , H01J2201/30469 , H01J2237/31786 , H01L51/0003 , H01L51/0048 , H01L51/0512 , Y10S977/813 , Y10S977/827 , Y10S977/832 , Y10S977/932 , Y10S977/939
摘要： The present invention provides a method for nanostructures grown on a metal underlayer, and a method of making the same. The grown nanostructures based on the claimed method are suitable for manufacturing electronic devices such as an electron beam writer, and a field emission display.
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.017 秒)
