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1.发明公开HIGH ASPECT RATIO TEMPLATE FOR LITHOGRAPHY, METHOD OF MAKING THE SAME TEMPLATE AND USE OF THE TEMPLATE FOR PERFORATING A SUBSTRATE AT NANOSCALE 审中-公开原有的高宽比光刻，方法生产该文件，并使用该模板射孔ON纳米尺度A SUBSTRATE
公开(公告)号：EP2307928A2
公开(公告)日：2011-04-13
申请号：EP09777381.6
申请日：2009-07-23
申请人： Smoltek AB
发明人： MUHAMMAD, Amin Saleem , BRUD, David , BERG, Jonas , KABIR, Mohammad, Shafiqul , DESMARIS, Vincent
IPC分类号： G03F7/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , Y10S977/932
摘要： Template and method of making high aspect ratio template, stamp, and imprinting at nanoscale using nanostructures for the purpose of lithography, and to the use of the template to create perforations on materials and products.
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2.发明公开DEPOSITION AND SELECTIVE REMOVAL OF CONDUCTING HELPLAYER FOR NANOSTRUCTURE PROCESSING 审中-公开主席团成员辅助层纳米结构加工中的应用及选择性脱除
公开(公告)号：EP2250661A1
公开(公告)日：2010-11-17
申请号：EP09715679.8
申请日：2009-02-20
申请人： Smoltek AB
IPC分类号： H01L21/18 , H01L21/203 , H01L21/302 , H01L21/3205 , H01L29/06 , H01L51/00 , H01L21/363
CPC分类号： C23C16/26 , B82Y10/00 , B82Y40/00 , C01B32/15 , C23C16/503 , G02B6/26 , H01B13/0026 , H01L21/0237 , H01L21/02491 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L21/4871 , H01L21/76802 , H01L21/76876 , H01L21/76877 , H01L21/76879 , H01L23/3677 , H01L23/3737 , H01L23/49827 , H01L23/5226 , H01L23/53276 , H01L29/0665 , H01L29/66439 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method for making one or more nanostructures is disclosed, the method comprising: depositing a conducting layer on an upper surface of a substrate; depositing a patterned layer of catalyst on the conducting layer; growing the one or more nanostructures on the layer of catalyst; and selectively removing the conducting layer between and around the one or more nanostructures. A device is also disclosed, comprising a substrate, wherein the substrate comprises one or more exposed metal islands separated by one or more insulating areas; a conducting helplayer disposed on the substrate covering at least some of the one or more exposed metal islands or insulating areas; a catalyst layer disposed on the conducting helplayer; and one or more nanostructures disposed on the catalyst layer.
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公开(公告)号：EP2250661B1
公开(公告)日：2020-04-08
申请号：EP09715679.8
申请日：2009-02-20
申请人： Smoltek AB
IPC分类号： H01L21/18 , H01L21/203 , H01L21/302 , H01L21/3205 , H01L29/06 , H01L21/363 , B82Y40/00 , B82Y10/00 , C01B32/15 , C23C16/26 , C23C16/503
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