公开(公告)号：EP1287549A4

公开(公告)日：2007-05-30

申请号：EP02716485

申请日：2002-01-24

申请人： KIM KI-BUM

发明人： KIM KI-BUM

IPC分类号： G03F7/20 ,  H01L21/26 ,  A61N5/00 ,  B82B3/00 ,  G03C5/00 ,  G21G5/00 ,  H01J27/00 ,  H01J37/317 ,  H01L21/00 ,  H01L21/027 ,  H01L21/324 ,  H01L21/335 ,  H01L21/336 ,  H01L21/42 ,  H01L21/477 ,  H01L21/8232 ,  H01L29/06 ,  H01L29/78 ,  H01L29/788

CPC分类号： H01J37/3174 ,  B82Y5/00 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/70408 ,  Y10S430/143

摘要： The present invention relates generally to an apparatus and a method for forming a pattern, and in particular, to an apparatus and a method for forming a pattern for the formation of quantum dots or wires with 1 ∩ 50 nm dimension using the atomic array of a crystalline material and to the manufacture of functional devices that have such a structure. In the present invention, the functional device means an electronic, magnetic, or optical device that can be fabricated by procedures including the formation process of quantum dots or wires.

公开(公告)号：EP1676306A2

公开(公告)日：2006-07-05

申请号：EP04795793.1

申请日：2004-10-21

申请人： NanoDynamics, Inc.

发明人： DORFMAN, Benjamin F.

IPC分类号： H01L21/42 ,  H05H1/24 ,  B01J3/06 ,  B32B9/00

CPC分类号： C23C16/30 ,  C01B32/05 ,  C23C16/452 ,  C30B25/105 ,  C30B29/04 ,  Y10T428/24975

摘要： The present invention generally provides carbon materials and methods for producing the carbon materials that include a polymer-like bonded carbon network, a diamond-like bonded carbon network, a graphene-like bonded carbon network, and at least one stabilizing network of at least one alloying element. The material may further include hydrogen, silicone, and oxygen. The carbon materials are generally produced using plasma deposition while accounting for both thermal and incident particle impact activation for surface reactions, which beneficially enables the production of the carbon material at relevantly low incident flux energy and/or relatively low substrate temperatures.

公开(公告)号：EP1147242A1

公开(公告)日：2001-10-24

申请号：EP99961807.7

申请日：1999-12-10

申请人： Tokyo Electron Limited

发明人： JOHNSON, Wayne, L.

IPC分类号： C23C16/00 ,  H01L21/26 ,  H01L21/42

CPC分类号： H01J37/32458 ,  H01J37/321 ,  H01J37/32522

摘要： A chamber housing (2) enclosing a plasma region (10) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a substantially vertically extending wall (4) surrounding a space (6) corresponding to the plasma region (10), the housing member (2) having a plurality of openings (32), and electrically conductive elements forming an electrostatic shield around the space; a plurality of dielectric members (36) each having a peripheral edge and each disposed to close a respective opening (32); and sealing members (40, 40', 42, 42') forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members (36).

公开(公告)号：EP0033138B1

公开(公告)日：1984-04-18

申请号：EP81100462.1

申请日：1981-01-22

申请人： Hitachi, Ltd.

发明人： Saitou, Norio ,  Ozasa, Susumu ,  Kuroda, Katsuhiro

IPC分类号： H01L21/42

CPC分类号： H01J37/304

公开(公告)号：EP1794781A2

公开(公告)日：2007-06-13

申请号：EP05728347.5

申请日：2005-03-17

申请人： International Business Machines Corporation

发明人： CALLEGARI, Alessandro, C. ,  COHEN, Stephan, A. ,  DOANY, Fuad, E.

IPC分类号： H01L21/26 ,  H01L21/42 ,  H01L21/324 ,  H01L21/477

CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

摘要： A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior art SiCOH dielectric films that are not subjected to the inventive deep ultra-violet (DUV) is disclosed. The improved properties include reduced current leakage which is achieved without adversely affecting (increasing) the dielectric constant of the SiCOH dieletric film. In accordance with the present invention, a SiCOH dielectric film exhibiting reduced current leakage and improved reliability is obtained by subjecting an as deposited SiCOH dielectric film to a DUV laser anneal. The DUV laser anneal step of the present invention likely removes the weakly bonded C from the film, thus improving leakage current.

公开(公告)号：EP1494271A4

公开(公告)日：2006-05-03

申请号：EP03744003

申请日：2003-03-06

申请人： HAMAMATSU PHOTONICS KK

发明人： FUJII YOSHIMARO ,  FUKUYO FUMITSUGU ,  FUKUMITSU KENSHI ,  UCHIYAMA NAOKI

IPC分类号： B23K26/38 ,  H01L21/78 ,  B23K26/40 ,  B23K101/40 ,  H01L21/26 ,  H01L21/30 ,  H01L21/301 ,  H01L21/324 ,  H01L21/42 ,  H01L21/46 ,  H01L21/477 ,  H05K3/00

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/063 ,  B23K26/40 ,  B23K26/4075 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

摘要翻译： 一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域 在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

公开(公告)号：EP0069823A1

公开(公告)日：1983-01-19

申请号：EP82102220.9

申请日：1982-03-18

申请人： IBM DEUTSCHLAND GMBH ,  International Business Machines Corporation

发明人： Bohlen, Harald, Dipl.-Phys. ,  Engelke, Helmut, Dr. Dipl.-Phys. ,  Greschner, Johann, Dr. Dipl.-Phys. ,  Mühl, Reinhold ,  Nehmiz, Peter, Dr. Dipl.-Phys. ,  Trumpp, Hans-Joachim, Dr. Dipl.-Phys.

IPC分类号： G03F9/00 ,  G03F7/20 ,  H01J37/20 ,  H01J37/304 ,  H01L21/68 ,  H01L21/26 ,  H01L21/42 ,  G02B27/00 ,  H05K3/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F9/00 ,  G03F9/7053 ,  H01J37/3045

摘要： zur gegenseitigen Ausrichtung (Registrieren) von Maske und Substrat bei Röntgenstrahl- oder Korpuskularstrahllithographie wird ein Elektronenstrahl (16; Fig. 1) verwendet, der kollateral mit dem Belichtungsstrahl (tonen- oder Röntgenstrahl) verläuft und während des eigentlichen Belichtungsvorgangs unterdrückt wird. Zur Einkopplung des Elektronenstrahls in den Belichtungsstrahlengang wird ein Magnetfeld (7) verwendet; die genaue relative Lage von Maske zu Substrat wird während des Ausrichtvorgangs durch Kippung des Elektronenstrahls ermittelt und die Feinausrichtung während des Belichtens durch entsprechende Kippung des lonenstrahls bzw. Verschiebung des Substrats relativ zum Röntgenstrahl durchgeführt. Die zur Belichtung verwendete Maske (10) besteht aus einer sehr dünnen Siliciumschicht mit einem Musterbereich und einem räumlich davon getrennten Registerbereich. Der Registerbereich besteht aus einer Vielzahl von Durchbrüchen, der Musterbereich aus Sacklöchern.

摘要翻译： 用于掩模和基板与X射线或Korpuskularstrahllithographie的相互对准（寄存器），电子束（16），使用哪个collat​​erally延伸到曝光束（离子束或X射线），并且实际曝光过程期间被抑制。 对于电子束到一个磁场的曝光光路的联接器（7）被使用; 所述掩模基底的精确相对位置通过倾斜电子束，并通过对应的相对于X射线束的衬底的离子束或位移的倾斜曝光期间执行精细对准的对准期间确定。 用于曝光（10），所述掩模由具有图案区域和一个在空间上分开的寄存器范围的非常薄的硅层。 包括多个孔，盲孔的图案区域的寄存器区。

公开(公告)号：EP0062367A1

公开(公告)日：1982-10-13

申请号：EP82200319.0

申请日：1982-03-11

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Wotherspoon, John Thomas Mclean

IPC分类号： H01L31/18 ,  H01L21/42

CPC分类号： H01L31/18 ,  H01L21/42 ,  H01L21/423 ,  H01L31/1032 ,  Y10S438/971

摘要： In the manufacture of an infra-red radiation detector device, a body (10) of p-type cadmium mercury telluride is bombarded with ions (11) to etch away a part (21) of the body (10) and to produce from the etched-away part of the body an excess concentration of mercury which acts as a dopant source converting an adjacent part (22) of the body (10) into n-type material. The energy of the bombarding ions is less than 30 keV, and by appropriately choosing the ion dose this conversion can be effected over a depth considerably greater than the penetration depth of the ions (11). A p-n junction (23) can be fabricated in this way for a photo-voltaic detector. The conductivity type conversion may even be effected through the body thickness. The etching and conversion can be localised by masking part of the body surface (20) against the ion bombardment.

公开(公告)号：EP1794781A4

公开(公告)日：2010-10-20

申请号：EP05728347

申请日：2005-03-17

申请人： IBM

发明人： CALLEGARI ALESSANDRO C ,  COHEN STEPHAN A ,  DOANY FUAD E

IPC分类号： H01L21/26 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01L21/76801 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02354 ,  H01L21/268 ,  H01L21/3122 ,  H01L21/31633 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  Y10T428/249978

公开(公告)号：EP1147242A4

公开(公告)日：2007-05-02

申请号：EP99961807

申请日：1999-12-10

申请人： TOKYO ELECTRON LTD

发明人： JOHNSON WAYNE L

IPC分类号： H05H1/46 ,  B01J19/08 ,  C23C16/00 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/26 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/42 ,  H05H1/00

CPC分类号： H01J37/32458 ,  H01J37/321 ,  H01J37/32522

摘要： A chamber housing (2) enclosing a plasma region (10) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a substantially vertically extending wall (4) surrounding a space (6) corresponding to the plasma region (10), the housing member (2) having a plurality of openings (32), and electrically conductive elements forming an electrostatic shield around the space; a plurality of dielectric members (36) each having a peripheral edge and each disposed to close a respective opening (32); and sealing members (40, 40', 42, 42') forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members (36).