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    Imide oligomer, and polyimide resin formed by heat curing thereof
    133.
    发明专利
    Imide oligomer, and polyimide resin formed by heat curing thereof 审中-公开
    聚酰亚胺和聚酰胺树脂通过热固化形成

    公开(公告)号：JP2012197403A

    公开(公告)日：2012-10-18

    申请号：JP2011084895

    申请日：2011-03-19

    Applicant: Pi R & D Co Ltd ,  株式会社ピーアイ技術研究所

    Inventor： NISHINO HIDEO

    IPC: C08G73/10

    Abstract: PROBLEM TO BE SOLVED: To provide an imide oligomer that is easy to be thermoformed and to be heat-cured at low temperatures to then be formed to a polyimide resin having the excellent heat resistance, and showing a large elongation at break.SOLUTION: This imide oligomer is characterized by having only two or more molecules per tetramer of 2,3,3', 4'-biphenyl tetracarboxylic dianhydride of a non-axially symmetric aromatic acid anhydride, the main molecule of 1,4-bis(4-aminophenoxy)benzene, and two or less molecules of 3,4-diaminodiphenyl ether, with the crosslinkable end of 4-ethynyl phthalic anhydride residue.

    Abstract translation: 要解决的问题：提供易于热成型并在低温下热固化然后形成为具有优异耐热性的聚酰亚胺树脂并显示出大的断裂伸长率的酰亚胺低聚物。 解决方案：该酰亚胺低聚物的特征在于每个四分子只有两个或更多个分子的非轴对称芳族酸酐的2,3,3'，4'-联苯四羧酸二酐，主分子为1,4 双（4-氨基苯氧基）苯和两个或更少的3,4-二氨基二苯醚分子，其中可交联的4-乙炔基邻苯二甲酸酐残基末端。 版权所有（C）2013，JPO＆INPIT

    Probe pin and method for manufacturing probe pin
    134.
    发明专利
    Probe pin and method for manufacturing probe pin 有权
    用于制造探针的探针和方法

    公开(公告)号：JP2012137416A

    公开(公告)日：2012-07-19

    申请号：JP2010290752

    申请日：2010-12-27

    Applicant: Mitsubishi Cable Ind Ltd ,  Pi R & D Co Ltd ,  三菱電線工業株式会社 ,  株式会社ピーアイ技術研究所

    Inventor： KAMIBAYASHI HIROYUKI ,  NAGATO TOYOKAZU ,  NAKAJIMA SHINTARO ,  GOSHIMA TOSHIYUKI

    IPC: G01R1/067 ,  H01L21/66

    Abstract: PROBLEM TO BE SOLVED: To provide a probe pin that is coated with an insulating film with a uniform thickness, is less varied in the thickness of the coated film from other probes, is coated with an electrodeposited film never fused with another insulating film even in a high temperature atmosphere and has a tip portion with the electrodeposited film peeled off without deformation.SOLUTION: An insulator including block copolymer polyimide having a siloxane skeleton in a molecular skeleton and having an anionic group in a molecule is electrodeposited on a thin metal wire 110, whereby forming an electrodeposited film part 130. A portion of the electrodeposited film part 130 in at least one end portion of the thin metal wire 110 is peeled and removed off with a polar solvent.

    Abstract translation: 要解决的问题：为了提供涂覆有均匀厚度的绝缘膜的探针，其它探针的涂膜厚度变化较小，涂覆有未与另一绝缘体熔合的电沉积膜 即使在高温气氛中也具有电子沉积膜的尖端部而没有变形的剥离。 解决方案：将具有分子骨架中的硅氧烷骨架并且在分子中具有阴离子基团的嵌段共聚物聚酰亚胺的绝缘体电沉积在细金属线110上，由此形成电沉积膜部分130.一部分电沉积膜 薄金属线110的至少一个端部中的部分130被剥离并用极性溶剂去除。 版权所有（C）2012，JPO＆INPIT

    Solar battery and method of manufacturing the same
    139.
    发明专利
    Solar battery and method of manufacturing the same 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：JP2012038915A

    公开(公告)日：2012-02-23

    申请号：JP2010177633

    申请日：2010-08-06

    Applicant: National Institute Of Advanced Industrial & Technology ,  Pi R & D Co Ltd ,  株式会社ピーアイ技術研究所 ,  独立行政法人産業技術総合研究所

    Inventor： TAKATO HIDETAKA ,  SAKATA ISAO ,  KIKUCHI YASUO ,  WIN MOSE ,  GOSHIMA TOSHIYUKI ,  SATO TAKAHIRO

    IPC: H01L31/04 ,  H01L31/052

    CPC classification number: Y02E10/52 ,  Y02E10/546

    Abstract: PROBLEM TO BE SOLVED: To provide a technique for achieving a high-efficiency crystal silicon solar battery having a partial contact structure on the back side through a simpler manufacturing process at a lower cost.SOLUTION: The solar battery comprises: a crystal silicon substrate of a first conductivity type made of monocrystalline or polycrystalline silicon; an impurity diffusion layer of a second conductivity type formed on the side of a light-receiving plane of the crystal silicon substrate; a first electrode formed on a surface of the impurity diffusion layer on the side of the light-receiving plane of the crystal silicon substrate; a second electrode formed on the back side of the crystal silicon substrate; and a backside reflection layer of polyimide or polyamide imide formed on the backside surface of the crystal silicon substrate, and having openings. The second electrode makes contact with the backside surface of the crystal silicon substrate through the openings.

    Abstract translation: 要解决的问题：通过较简单的制造工艺，以较低的成本提供一种在后侧实现部分接触结构的高效率晶体硅太阳能电池的技术。 解决方案：太阳能电池包括：由单晶或多晶硅制成的第一导电类型的晶体硅衬底; 形成在所述晶体硅衬底的光接收面侧的第二导电类型的杂质扩散层; 形成在所述晶体硅衬底的所述光接收面一侧的所述杂质扩散层的表面上的第一电极; 形成在所述晶体硅衬底的背面上的第二电极; 以及形成在晶体硅衬底的背面上并具有开口的聚酰亚胺或聚酰胺酰亚胺的背面反射层。 第二电极通过开口与晶体硅衬底的背面接触。 版权所有（C）2012，JPO＆INPIT

    Polyimide resin composition for semiconductor apparatus, method for forming film in semiconductor apparatus and semiconductor apparatus
    140.
    发明专利
    Polyimide resin composition for semiconductor apparatus, method for forming film in semiconductor apparatus and semiconductor apparatus 有权
    用于半导体装置的聚酰亚胺树脂组合物，在半导体装置和半导体装置中形成薄膜的方法

    公开(公告)号：JP2011178855A

    公开(公告)日：2011-09-15

    申请号：JP2010043166

    申请日：2010-02-26

    Applicant: Mitsubishi Electric Corp ,  Pi R & D Co Ltd ,  三菱電機株式会社 ,  株式会社ピーアイ技術研究所

    Inventor： GOTO TOSHIYUKI ,  SEGAWA SHIGEMASA ,  WIN MAW SOE ,  YAMASHITA JUNICHI ,  TAKANASHI TAKESHI

    IPC: C08L79/08 ,  C08G73/10 ,  C09D11/00 ,  C09D11/322 ,  C09D11/36 ,  H01L21/312 ,  H01L21/60

    CPC classification number: C08G73/1042 ,  C08G73/106 ,  C08L79/08 ,  C09D179/08 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/19041 ,  H01L2924/00

    Abstract: PROBLEM TO BE SOLVED: To provide a polyimide resin composition for a semiconductor apparatus, which has rheological characteristics suitable for screen printing and dispense coating, improved wettability to each coating substrate, continuously prints 500 times or more, does not cause blisters, cissing and pinholes after printing and coating or during drying and curing and coats a prescribed part, a method for forming a film in a semiconductor apparatus using the same and a semiconductor apparatus having a film formed by the method as an insulating film, a protective film, etc.
    SOLUTION: The polyimide resin composition for a semiconductor apparatus is a heat-resistant polyimide resin soluble in a mixed solvent of a first organic solvent (A) and a second organic solvent (B) and contains a polyimide resin, which contains an alkyl group and/or perfluoroalkyl group in a repeating unit of the polyimide and has thixotropic properties, in the mixed solvent.
    COPYRIGHT: (C)2011,JPO&INPIT

    Abstract translation: 解决问题的方案为了提供一种半导体装置的聚酰亚胺树脂组合物，其具有适用于丝网印刷和分配涂布的流变特性，改善了对每个涂布基材的润湿性，连续印刷500次以上不会引起水泡， 在印刷和涂布之后或在干燥和固化期间进行切割和针孔，并且涂覆规定的部分，在使用其的半导体装置中形成膜的方法以及具有通过该方法形成的膜作为绝缘膜的半导体装置，保护膜 等。解决方案：用于半导体装置的聚酰亚胺树脂组合物是可溶于第一有机溶剂（A）和第二有机溶剂（B）的混合溶剂中的耐热聚酰亚胺树脂，并且含有聚酰亚胺树脂， 其在聚酰亚胺的重复单元中含有烷基和/或全氟烷基，并且在混合溶剂中具有触变性。 版权所有（C）2011，JPO＆INPIT

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