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    Method for heating semiconductor wafer
    1.
    发明专利
    Method for heating semiconductor wafer 失效
    加热半导体波形的方法

    公开(公告)号：JPS59169125A

    公开(公告)日：1984-09-25

    申请号：JP4220383

    申请日：1983-03-16

    申请人： Ushio Inc

    发明人： ARAI TETSUHARU ,  MIMURA YOSHIKI

    IPC分类号： H01L21/26 ,  B28D5/00 ,  F27D5/00 ,  H01L21/00 ,  H01L21/268

    CPC分类号： H01L21/67115 ,  B28D5/00 ,  F27D5/0062 ,  H01L21/2686

    摘要： PURPOSE: To enable heating of the region requiring heating selectively as wall as to prevent overheat of the region not-requiring heating by reducing the degree of reflection of a surface of the region requiring heating to be smaller than that of the region not-requiring heating, after which the semiconductor wafer is irradiated with flashing light to be heated.
    CONSTITUTION: A film 7 consisting of silicon oxide of about 0.1μm thick is formed over the whole surface of a wafer 6. Next, the wafer 6 covered with the film 7 is held at a wafer-holding part of a sample table 5 in a heating oven and is heated preliminarily by a heater of the sample table 5 prior to irradiation with flashing light. When the temperature of the wafer 6 reaches about 350°C, it is heated by the irradiation with the flashing light over the whole surface by a light source S of the flashing light plane. With respect to this flashing light irradiation, it is a logical background that the degree of reflection of a surface of the region requiring heating of the wafer 6 becomes about 0.26 whereas that of the region not-requiring heating is about 0.31. Accordingly, the degree of reflection of a surface of the region requiring heating becomes smaller than that of the region not-requiring heating.
    COPYRIGHT: (C)1984,JPO&Japio

    摘要翻译： 目的：为了能够选择性地加热需要加热的区域作为壁，以防止不需要加热的区域的过热，将需要加热的区域的表面的反射程度降低到不需要加热的区域的反射程度 然后用要加热的闪光照射半导体晶片。 构成：在晶片6的整个表面上形成由约0.1μm厚的氧化硅组成的膜7.接下来，用膜7覆盖的晶片6被保持在样品台5的晶片保持部分 加热烘箱，并在用闪光照射之前由样品台5的加热器预先加热。 当晶片6的温度达到约350℃时，通过闪光的光源S在整个表面上用闪光照射来加热。 对于这种闪光照射，理想的背景是需要加热晶片6的区域的表面的反射程度为约0.26，而不需要加热的区域的反射程度为约0.31。 因此，需要加热的区域的表面的反射程度比不需要加热的区域的反射程度小。