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公开(公告)号:JP2012186431A
公开(公告)日:2012-09-27
申请号:JP2011050361
申请日:2011-03-08
Inventor: SEKINE SHIGENOBU , SEKINE YURINA
CPC classification number: H05K1/097 , H01L23/49866 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L31/022425 , H01L31/0682 , H01L33/62 , H01L2224/16145 , H01L2224/16225 , H01L2224/2929 , H01L2224/293 , H01L2224/81191 , H01L2224/81193 , H01L2224/81395 , H01L2224/81903 , H01L2224/83191 , H01L2224/83192 , H01L2224/8359 , H01L2224/83605 , H01L2224/83609 , H01L2224/83611 , H01L2224/83613 , H01L2224/83618 , H01L2224/83624 , H01L2224/83639 , H01L2224/83644 , H01L2224/83647 , H01L2224/83655 , H01L2224/8366 , H01L2224/83666 , H01L2224/83669 , H01L2224/83701 , H01L2224/83799 , H01L2224/83815 , H01L2224/83825 , H01L2224/83851 , H01L2224/83886 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/00011 , H01L2924/01327 , H01L2924/12041 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H05K1/111 , H05K2201/0338 , H05K2201/099 , Y02E10/547 , Y02P70/611 , H01L2924/00 , H01L2224/8159 , H01L2924/00014 , H01L2224/81799 , H01L2924/00012 , H01L2224/81639 , H01L2224/81647 , H01L2224/81644 , H01L2224/81669 , H01L2224/81666 , H01L2224/81624 , H01L2224/81618 , H01L2224/8166 , H01L2224/81655 , H01L2224/81611 , H01L2224/81609 , H01L2224/81613 , H01L2224/81605 , H01L2224/29075
Abstract: PROBLEM TO BE SOLVED: To provide an electronic apparatus which is excellent in conductivity, electrochemical stability, oxidation resistance, repletion, denseness, and mechanical and physical strength and has a high quality metalization wiring having high bonding and adhesive force to substrates and achieving high reliability.SOLUTION: A substrate 11 has metalization wiring 12 having a predetermined pattern. The metalization wiring 12 includes a metalization layer 121 and an insulation layer 122. The metalization layer 121 includes a high melting metal component and a low melting metal component, and the high melting metal component and the low melting metal component are diffusively joined to each other. The insulation layer 122 is formed at the same time as the metalization layer 121 and covers an exterior surface of the metalization layer 121. An electronic component 14 electrically connects with the metalization layer 121 of the metalization wiring 12.
Abstract translation: 要解决的问题:提供导电性,电化学稳定性,抗氧化性,补充性,致密性和机械和物理强度优异的电子设备,并且具有对基底具有高粘合力和粘合力的高质量金属化布线, 实现高可靠性。 解决方案:基板11具有预定图案的金属化布线12。 金属化布线12包括金属化层121和绝缘层122.金属化层121包括高熔点金属成分和低熔点金属成分,高熔点金属成分和低熔点金属成分彼此扩散接合 。 绝缘层122与金属化层121同时形成并覆盖金属化层121的外表面。电子部件14与金属化布线12的金属化层121电连接。(C )2012,JPO&INPIT
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公开(公告)号:JP4778120B1
公开(公告)日:2011-09-21
申请号:JP2011050361
申请日:2011-03-08
Applicant: 有限会社ナプラ
IPC: H05K1/09
CPC classification number: H05K1/097 , H01L23/49866 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L31/022425 , H01L31/0682 , H01L33/62 , H01L2224/16145 , H01L2224/16225 , H01L2224/2929 , H01L2224/293 , H01L2224/81191 , H01L2224/81193 , H01L2224/81395 , H01L2224/81903 , H01L2224/83191 , H01L2224/83192 , H01L2224/8359 , H01L2224/83605 , H01L2224/83609 , H01L2224/83611 , H01L2224/83613 , H01L2224/83618 , H01L2224/83624 , H01L2224/83639 , H01L2224/83644 , H01L2224/83647 , H01L2224/83655 , H01L2224/8366 , H01L2224/83666 , H01L2224/83669 , H01L2224/83701 , H01L2224/83799 , H01L2224/83815 , H01L2224/83825 , H01L2224/83851 , H01L2224/83886 , H01L2225/06517 , H01L2225/06541 , H01L2225/06572 , H01L2924/00011 , H01L2924/01327 , H01L2924/12041 , H01L2924/14 , H01L2924/1431 , H01L2924/1434 , H05K1/111 , H05K2201/0338 , H05K2201/099 , Y02E10/547 , Y02P70/611 , H01L2924/00 , H01L2224/8159 , H01L2924/00014 , H01L2224/81799 , H01L2924/00012 , H01L2224/81639 , H01L2224/81647 , H01L2224/81644 , H01L2224/81669 , H01L2224/81666 , H01L2224/81624 , H01L2224/81618 , H01L2224/8166 , H01L2224/81655 , H01L2224/81611 , H01L2224/81609 , H01L2224/81613 , H01L2224/81605 , H01L2224/29075
Abstract: An electronic device includes a substrate and an electronic component. The substrate has a metallized trace. The metallized trace has a metallized layer and an insulation layer. The metallized layer has a high melting point metal component and a low melting point metal component, the high melting point metal component and the low melting point metal component being diffusion bonded together. The insulation layer is formed simultaneously with the metallized layer to cover an outer surface of the metallized layer. The electronic component is electrically connected to the metallized layer.
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