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公开(公告)号：JP2014241389A
公开(公告)日：2014-12-25
申请号：JP2014010616
申请日：2014-01-23
Inventor： SEKINE SHIGENOBU , SEKINE YURINA
Abstract: 【課題】磁場反転が生じ難く、高保磁力を維持し得る永久磁石を用いた電気・機械エネルギ変換装置及び産業機械を提供すること。【解決手段】移動子3は、12極の永久磁石301〜312を含んでいる。永久磁石301〜312は、金属又は合金の焼結体であって、強磁性相と、非磁性相とのナノコンポジット構造でなる。非磁性相は、エピタキシャル成長酸化物であって、強磁性相の境界又は強磁性相内に膜状又は粒子状で存在し、強磁性相に対する歪吸収作用を行う。【選択図】図1
Abstract translation: 要解决的问题：提供一种使用能够保持高矫顽力的永磁体的机电能量转换装置和工业机械，几乎不产生磁场反转。解决方案：动子3包括12极永磁体301至312. 永磁体301〜312是金属或合金的烧结体，由铁磁性相和非磁性相的纳米复合结构构成。 非磁性相是外延生长氧化物，并且存在于铁磁相的界面或铁磁相中的膜状或粒状，并对铁磁相进行变形吸收效果。
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公开(公告)号：JP2014063725A
公开(公告)日：2014-04-10
申请号：JP2013171259
申请日：2013-08-21
Inventor： SEKINE SHIGENOBU , SEKINE YURINA
IPC: H01B1/22 , B22F1/00 , B22F9/00 , C22C9/02 , C22C12/00 , C22C13/00 , C22C13/02 , H01B1/00 , H01L21/288 , H01L21/3205 , H01L21/768 , H01L23/522 , H05K1/09 , H05K1/11
CPC classification number: H01L23/53233 , B22F1/0003 , C22C1/0425 , H01L23/481 , H01L23/49827 , H01L23/49883 , H01L23/5328 , H01L2224/0557 , H01L2224/131 , H01L2224/16146 , H01L2224/16227 , H01L2224/81825 , H01L2224/8183 , H01L2924/0002 , H01L2924/00 , H01L2924/00014 , H01L2924/014
Abstract: PROBLEM TO BE SOLVED: To provide a functional material capable of forming wiring, an electrode, a filling structure, a sealing structure, or a joining structure with high quality and high reliability, which is free from generation of voids, cracks, and the like, and to provide an electronic device.SOLUTION: The functional material according to the present invention contains at least two kinds of particles selected from first metal composite particles, second metal composite particles, and third metal composite particles. Each of the first metal composite particles, the second metal composite particles, and the third metal composite particles contain a plurality of kinds of metal components. The melting point T1 (°C) of the first metal composite particles, the melting point T2 (°C) of the second metal composite particles, and the melting point T3 (°C) of the third metal composite particles satisfy a relationship of T1>T2>T3.
Abstract translation: 要解决的问题：为了提供能够形成布线的功能材料，电极，填充结构，密封结构或具有高质量和高可靠性的接合结构，其不产生空隙，裂纹等 ，并提供电子器件。解决方案：根据本发明的功能材料包含选自第一金属复合颗粒，第二金属复合颗粒和第三金属复合颗粒中的至少两种颗粒。 第一金属复合颗粒，第二金属复合颗粒和第三金属复合颗粒中的每一个都含有多种金属组分。 第一金属复合颗粒的熔点T1（℃），第二金属复合颗粒的熔点T2（℃）和第三金属复合颗粒的熔点T3（℃）满足关系式T1 > T2> T3。
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公开(公告)号：JP2013229376A
公开(公告)日：2013-11-07
申请号：JP2012098837
申请日：2012-04-24
Inventor： SEKINE SHIGENOBU , SEKINE YURINA
CPC classification number: H01L23/48 , H01B1/22 , H01L21/4867 , H01L21/563 , H01L23/498 , H01L23/49838 , H01L23/49866 , H01L23/49883 , H01L23/49894 , H01L24/03 , H01L24/05 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/81 , H01L25/0657 , H01L25/16 , H01L31/022425 , H01L31/0682 , H01L33/62 , H01L2224/0332 , H01L2224/0341 , H01L2224/03848 , H01L2224/0401 , H01L2224/05023 , H01L2224/05205 , H01L2224/05209 , H01L2224/05211 , H01L2224/05213 , H01L2224/05318 , H01L2224/05324 , H01L2224/05338 , H01L2224/05339 , H01L2224/05344 , H01L2224/05347 , H01L2224/05355 , H01L2224/0536 , H01L2224/05366 , H01L2224/05369 , H01L2224/05562 , H01L2224/0569 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/17181 , H01L2224/32225 , H01L2224/33181 , H01L2224/73204 , H01L2224/81191 , H01L2224/81192 , H01L2224/81375 , H01L2224/81395 , H01L2224/81505 , H01L2224/81509 , H01L2224/81511 , H01L2224/81513 , H01L2224/81618 , H01L2224/81624 , H01L2224/81638 , H01L2224/81639 , H01L2224/81644 , H01L2224/81647 , H01L2224/81655 , H01L2224/8166 , H01L2224/81666 , H01L2224/81669 , H01L2224/831 , H01L2225/06513 , H01L2225/06517 , H01L2225/06548 , H01L2225/06572 , H01L2924/00014 , H01L2924/01327 , H01L2924/12041 , H01L2924/15747 , H01L2933/0016 , H01L2933/0066 , Y02E10/547 , H01L2924/01014 , H01L2924/00 , H01L2224/05552
Abstract: PROBLEM TO BE SOLVED: To provide an electronic apparatus in which when connecting an external electric conductor or an electronic component to metalized wiring, it is possible to ensure oxidation resistance and to securely ensure electrical conduction between them.SOLUTION: A base plate 11 has metalized wiring 12. The metalized wiring 12 includes a metalized layer 121 and a synthetic resin film 122. The metalized layer 121 includes a high melting-point metal component and a low melting-point metal component, and the high melting-point metal component and the low melting-point metal component are diffusion-bonded to each other. The synthetic resin film 122 covers a surface of the metalized layer 121 and has a film thickness ranging 5 nm to 1000 nm.
Abstract translation: 要解决的问题：为了提供一种电子设备，其中当将外部电导体或电子部件连接到金属化布线时，可以确保抗氧化性并且可靠地确保它们之间的导电。解决方案：基板11具有金属化 金属化布线12包括金属化层121和合成树脂膜122.金属化层121包括高熔点金属成分和低熔点金属成分，高熔点金属成分和高熔点金属成分 低熔点金属成分彼此扩散接合。 合成树脂膜122覆盖金属化层121的表面，膜厚为5nm〜1000nm。
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4.发明专利
公开(公告)号：JP2013143216A
公开(公告)日：2013-07-22
申请号：JP2012002034
申请日：2012-01-10
Inventor： SEKINE SHIGENOBU , SEKINE YURINA
IPC: H01B1/16 , B22F3/11 , B22F3/26 , C22C1/10 , H01B1/02 , H01B1/18 , H01B13/00 , H01L21/285 , H01L21/288 , H01L23/00 , H01L23/14 , H01L29/06 , H05K1/09
CPC classification number: H01L2924/0002 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a functional material which can achieve a dense metal/alloy filling structure, and is applicable to an electrode material, electrolytic material, wiring material, electronic component bonding material, sputtering target, and the like, and to provide an electronic device in which the functional material is applied to a functional part, an electromagnetic wave absorbing/shielding device and a method suitable for production thereof.SOLUTION: A binding region 1 has a nanocomposite structure containing an intermetallic compound or a metallic compound, and filling the periphery of metal/alloy particles 3 with a size of 200 nm or less. The binding region may have a nanocomposite structure containing a crystalline or amorphous glass component or ceramic. The metal/alloy particles 3 have a nanocomposite structure, and the minimum full size is preferably 1 μm or less.
Abstract translation: 要解决的问题：提供能够实现致密的金属/合金填充结构的功能材料，并且可应用于电极材料，电解材料，布线材料，电子部件接合材料，溅射靶等，并且提供 将功能材料应用于功能部件的电子装置，电磁波吸收/屏蔽装置以及适于其制造的方法。解决方案：结合区域1具有包含金属间化合物或金属化合物的纳米复合结构，以及 填充尺寸为200nm以下的金属/合金粒子3的周边。 结合区可以具有包含结晶或非晶玻璃组分或陶瓷的纳米复合结构。 金属/合金粒子3具有纳米复合结构，最小全尺寸优选为1μm以下。
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公开(公告)号：JP2013048187A
公开(公告)日：2013-03-07
申请号：JP2011186353
申请日：2011-08-29
Inventor： SEKINE SHIGENOBU , SEKINE YURINA
IPC: H05K1/09 , G02F1/13357 , H01L31/04 , H01L31/042 , H01L33/48 , H05K3/28 , H05K3/34
CPC classification number: Y02E10/50
Abstract: PROBLEM TO BE SOLVED: To provide an electronic apparatus having metallized wiring which is excellent in conductivity, electrochemical stability, oxidation resistance, filling properties, compactness, and mechanical and physical strength, which achieves high bonding force and adhesive force to a substrate and high quality and high reliability.SOLUTION: A substrate 11 has metallized wiring 12 having a predetermined pattern. The metallized wiring 12 includes a metallized layer 121 and an insulation layer 122. The metallized layer 121 includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusely joined to each other. The insulation layer 122 is formed concurrently with the metallized layer 121 and covers an outer surface of the metallized layer 121. An electronic component 14 electrically connects with the metallized layer 121 of the metallized wiring 12.
Abstract translation: 解决的问题：提供一种具有导电性，电化学稳定性，抗氧化性，填充性，紧凑性和机械和物理强度优异的金属化布线的电子设备，其实现了对基板的高粘结力和粘合力 质量高，可靠性高。 解决方案：基板11具有预定图案的金属化布线12。 金属化布线12包括金属化层121和绝缘层122.金属化层121包括高熔点金属组分和低熔点金属组分，并且高熔点金属组分和低熔点金属组分是扩散的 相互加入 绝缘层122与金属化层121同时形成并覆盖金属化层121的外表面。电子部件14与金属化布线12的金属化层121电连接。（C）2013， JPO和INPIT
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Patent Agency Ranking6.发明专利Light-emitting diode, light-emitting device, lighting device, display, and signal light 有权发光二极管，发光装置，照明装置，显示器和信号灯
公开(公告)号：JP2011060996A
公开(公告)日：2011-03-24
申请号：JP2009208992
申请日：2009-09-10
Inventor： SEKINE SHIGENOBU , SEKINE YURINA , KUWANA RYOJI
IPC: H01L33/36 , G02F1/13357 , H01L33/50
CPC classification number: H01L33/382
Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive light-emitting diode that achieves the large light-emission quantity, high luminous efficiency, and uniform surface light-emission, a light-emitting device using the same, a lighting device, a display, and a signal light. SOLUTION: A semiconductor light-emitting layer 2 is laminated on one side of a substrate 1. Electrodes 411-414 for supplying electric energy to the semiconductor light-emitting layer 2 are composed of a conductor filled in micropores 511-514 penetrating through the substrate and reaching the semiconductor light-emitting layer 2. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：为了提供实现大发光量，高发光效率和均匀的表面发光的廉价的发光二极管，使用该发光装置的发光装置，照明装置， 显示和信号灯。 解决方案：半导体发光层2层叠在基板1的一侧上。用于向半导体发光层2供电的电极411-414由填充有微孔511-514的导体构成，穿透 通过基板并到达半导体发光层2.版权所有（C）2011，JPO＆INPIT
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公开(公告)号：JP2010283034A
公开(公告)日：2010-12-16
申请号：JP2009133363
申请日：2009-06-02
Inventor： SEKINE SHIGENOBU , SEKINE YURINA , KIMURA RYUJI
IPC: H01L21/3205 , H01L21/768 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To provide a metal filling apparatus for filling the fine space of an object with a metallic filler without generating a recessing and an air gap, a void and the like and being capable of achieving the reduction of a cost and an improvement in a treatment efficiency. SOLUTION: The metal filling apparatus includes: a first support 10 supporting the object 2 from the reverse side of the opening surfaces of the fine space under the state opening one of the opening surfaces of the fine space; and a second support 11 being joined with the first support 10 from the opening-surface side and sealing the object 2 in a treatment chamber A. The metal filling apparatus further includes: a molten-metal feeder 12 feeding the treatment chamber A with a molten metal M; and a pressure controller 13 controlling a pressure in the treatment chamber A. The metal filling apparatus includes a pressure means pressurizing the treatment chamber A until the molten metal is cured by a cooling after the inside of the fine space is filled with the molten metal M. COPYRIGHT: (C)2011,JPO&INPIT
Abstract translation: 要解决的问题：提供一种金属填充设备，用于用金属填料填充物体的细小空间，而不产生凹陷和气隙，空隙等，并且能够实现成本的降低 并提高治疗效率。 解决方案：金属填充设备包括：第一支撑件10，其在打开微细空间的一个开口表面的状态下从微细空间的开口表面的相反侧支撑物体2; 并且第二支撑件11从开口表面侧与第一支撑件10接合并将物体2密封在处理室A中。金属填充设备还包括：熔融金属进料器12，将处理室A与熔融的 金属M 以及控制处理室A中的压力的压力控制器13.金属填充装置包括对处理室A进行加压的压力装置，直到在精细空间的内部填充有熔融金属M之后通过冷却固化熔融金属 版权所有（C）2011，JPO＆INPIT
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8.发明专利Nano spherical particle having composite structure, powder and method for producing the same 有权具有复合结构的纳米球形颗粒，粉末及其制造方法
公开(公告)号：JP2008038163A
公开(公告)日：2008-02-21
申请号：JP2006210361
申请日：2006-08-01
Inventor： SEKINE SHIGENOBU , SEKINE YURINA
IPC: B22F1/00 , B01J19/08 , B22F9/10 , B82B1/00 , B82B3/00 , C01B21/064 , C01B31/36 , C01B33/02 , C01B35/02
Abstract: PROBLEM TO BE SOLVED: To provide a nano spherical particle which has a desired composition, is excellent in application properties and is suitable for realizing high efficiency elements and devices having various functions, to provide a powder, and to provide a method for producing a nano spherical particle capable of realizing a collection rate sufficiently satisfying industrial utilizability. SOLUTION: The melt of a raw material metal is fed to the surface of a pan disk rotating at a high speed in an argon inert gas atmosphere, is scattered as droplets by acting centrifugal force, and is rapidly cooled by being made in contact with the gas atmosphere, so as to be spherical particles, Thereafter, the obtained spherical particles are subjected to plasma reaction crystallization treatment where they are collided and reacted with argon ions in a plasma rotating flow, thus the components of the raw material metal are decomposed into nanosizes, and are simultaneously contacted with a reactive gas component or a vapor component. In this way, the nano spherical particles with a nanocomposite structure having a particle diameter of COPYRIGHT: (C)2008,JPO&INPIT
Abstract translation: 要解决的问题：为了提供具有所需组成的纳米球形颗粒，其应用性能优异并且适用于实现具有各种功能的高效元素和装置，以提供粉末，并提供一种方法 生产能够实现充分满足工业利用率的收集速率的纳米球形颗粒。 解决方案：将原料金属熔体送入在氩气惰性气体环境中以高速旋转的盘式盘的表面，作为离心力作为液滴散发，并通过制成 与气体气氛接触，形成球状粒子，然后将所得球形粒子进行等离子体反应结晶处理，与等离子体旋转流中的氩离子发生碰撞并反应，原料金属成分为 分解成纳米尺寸，同时与反应性气体组分或蒸汽组分接触。 以这种方式，可以获得具有粒径<1μm且球形度≤20％的纳米复合结构的纳米球形颗粒。 此外，粉末包括它。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2005320195A
公开(公告)日：2005-11-17
申请号：JP2004138434
申请日：2004-05-07
Inventor： SEKINE SHIGENOBU , NAGUMO TAKANORI , OKADA KEIJI , KIKUCHI KAZUO , OGAWA MASATAKA , MORI HIROSHI , KAMEI TAKAHIRO
IPC: C01B33/02
Abstract: PROBLEM TO BE SOLVED: To provide silicon fine particles whose particle sizes are nano-order and the inside of each of which has an amorphous or crystalline structure.
SOLUTION: The spherical polycrystalline or amorphous silicon fine particles having nano-meter sizes are obtained by supplying molten silicon onto a dish-shaped disk rotating at high speed, scattering the molten silicon as droplets by applying a centrifugal force to it, dispersing silicon particles obtained by rapidly cooling the scattered droplets in an inert gas atmosphere into a liquid medium, and repeating an operation of passing the dispersion through a small diameter nozzle under pressure.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 要解决的问题：提供粒径为纳米级的硅微细颗粒，其每一个都具有无定形或结晶结构。 解决方案：具有纳米尺寸的球形多晶或非晶硅微粒通过将熔融硅供给到高速旋转的盘形盘上而获得，通过向其施加离心力将熔融硅作为液滴散射，分散 通过将惰性气体气氛中的散射液滴迅速冷却到液体介质中而获得的硅颗粒，并且重复使分散体在压力下通过小直径喷嘴的操作。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2015035483A
公开(公告)日：2015-02-19
申请号：JP2013165314
申请日：2013-08-08
Inventor： SEKINE SHIGENOBU , IKEDA HIROAKI , SEKINE YURINA
IPC: H01L23/12 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L25/065 , H01L25/07 , H01L25/18
CPC classification number: H01L23/49827 , H01L21/76879 , H01L21/76898 , H01L23/481 , H01L23/49894 , H01L23/522 , H01L2924/0002 , H01L2924/00
Abstract: 【課題】狭ピッチTSV構造を持つ配線基板及びその製造方法を提供すること。【解決手段】絶縁部5は、半導体基板1の厚み方向に形成された溝又は孔の内部121に充填された絶縁物でなる。柱状導体311〜316は、絶縁部5の面内に狭ピッチd1、d2で配置され、かつ、厚み方向に延びる溝又は孔の内部に充填されたものである。【選択図】図1
Abstract translation: 要解决的问题：提供具有窄间距TSV结构的布线板; 并提供布线板的制造方法。解决方案：布线板包括：绝缘部件5，其由填充在半导体基板1的厚度方向上的槽或孔的内部的绝缘体构成; 柱状导体311-316，其以窄间距d1，d2布置在绝缘部分5的平面中，并且填充沿厚度方向延伸的凹槽或孔的内部。
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