摘要:
PROBLEM TO BE SOLVED: To provide a functional material capable of forming wiring, an electrode, a filling structure, a sealing structure, or a joining structure with high quality and high reliability, which is free from generation of voids, cracks, and the like, and to provide an electronic device.SOLUTION: The functional material according to the present invention contains at least two kinds of particles selected from first metal composite particles, second metal composite particles, and third metal composite particles. Each of the first metal composite particles, the second metal composite particles, and the third metal composite particles contain a plurality of kinds of metal components. The melting point T1 (°C) of the first metal composite particles, the melting point T2 (°C) of the second metal composite particles, and the melting point T3 (°C) of the third metal composite particles satisfy a relationship of T1>T2>T3.
摘要:
PROBLEM TO BE SOLVED: To provide an electronic apparatus in which when connecting an external electric conductor or an electronic component to metalized wiring, it is possible to ensure oxidation resistance and to securely ensure electrical conduction between them.SOLUTION: A base plate 11 has metalized wiring 12. The metalized wiring 12 includes a metalized layer 121 and a synthetic resin film 122. The metalized layer 121 includes a high melting-point metal component and a low melting-point metal component, and the high melting-point metal component and the low melting-point metal component are diffusion-bonded to each other. The synthetic resin film 122 covers a surface of the metalized layer 121 and has a film thickness ranging 5 nm to 1000 nm.
摘要:
PROBLEM TO BE SOLVED: To provide a functional material which can achieve a dense metal/alloy filling structure, and is applicable to an electrode material, electrolytic material, wiring material, electronic component bonding material, sputtering target, and the like, and to provide an electronic device in which the functional material is applied to a functional part, an electromagnetic wave absorbing/shielding device and a method suitable for production thereof.SOLUTION: A binding region 1 has a nanocomposite structure containing an intermetallic compound or a metallic compound, and filling the periphery of metal/alloy particles 3 with a size of 200 nm or less. The binding region may have a nanocomposite structure containing a crystalline or amorphous glass component or ceramic. The metal/alloy particles 3 have a nanocomposite structure, and the minimum full size is preferably 1 μm or less.
摘要:
PROBLEM TO BE SOLVED: To provide an electronic apparatus having metallized wiring which is excellent in conductivity, electrochemical stability, oxidation resistance, filling properties, compactness, and mechanical and physical strength, which achieves high bonding force and adhesive force to a substrate and high quality and high reliability.SOLUTION: A substrate 11 has metallized wiring 12 having a predetermined pattern. The metallized wiring 12 includes a metallized layer 121 and an insulation layer 122. The metallized layer 121 includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusely joined to each other. The insulation layer 122 is formed concurrently with the metallized layer 121 and covers an outer surface of the metallized layer 121. An electronic component 14 electrically connects with the metallized layer 121 of the metallized wiring 12.
摘要:
PROBLEM TO BE SOLVED: To provide an inexpensive light-emitting diode that achieves the large light-emission quantity, high luminous efficiency, and uniform surface light-emission, a light-emitting device using the same, a lighting device, a display, and a signal light. SOLUTION: A semiconductor light-emitting layer 2 is laminated on one side of a substrate 1. Electrodes 411-414 for supplying electric energy to the semiconductor light-emitting layer 2 are composed of a conductor filled in micropores 511-514 penetrating through the substrate and reaching the semiconductor light-emitting layer 2. COPYRIGHT: (C)2011,JPO&INPIT