電気・機械エネルギ変換装置及びそれを用いた産業機械
    1.
    发明专利
    電気・機械エネルギ変換装置及びそれを用いた産業機械 审中-公开
    机电能量转换装置及其使用的工业机械

    公开(公告)号:JP2014241389A

    公开(公告)日:2014-12-25

    申请号:JP2014010616

    申请日:2014-01-23

    摘要: 【課題】磁場反転が生じ難く、高保磁力を維持し得る永久磁石を用いた電気・機械エネルギ変換装置及び産業機械を提供すること。【解決手段】移動子3は、12極の永久磁石301〜312を含んでいる。永久磁石301〜312は、金属又は合金の焼結体であって、強磁性相と、非磁性相とのナノコンポジット構造でなる。非磁性相は、エピタキシャル成長酸化物であって、強磁性相の境界又は強磁性相内に膜状又は粒子状で存在し、強磁性相に対する歪吸収作用を行う。【選択図】図1

    摘要翻译: 要解决的问题:提供一种使用能够保持高矫顽力的永磁体的机电能量转换装置和工业机械,几乎不产生磁场反转。解决方案:动子3包括12极永磁体301至312. 永磁体301〜312是金属或合金的烧结体,由铁磁性相和非磁性相的纳米复合结构构成。 非磁性相是外延生长氧化物,并且存在于铁磁相的界面或铁磁相中的膜状或粒状,并对铁磁相进行变形吸收效果。

    集積回路装置
    4.
    发明专利
    集積回路装置 有权
    集成电路设备

    公开(公告)号:JP2015032752A

    公开(公告)日:2015-02-16

    申请号:JP2013162647

    申请日:2013-08-05

    摘要: 【課題】能動素子及び受動素子を高密度で配置した薄型の集積回路装置を提供すること。【解決手段】半導体基板101と、能動素子Q1と、受動素子PS2とを含む。能動素子Q1は、半導体基板101によって構成されており、受動素子PS2は、半導体基板1の厚み方向に設けられた溝状又は孔状の要素形成領域111、112、113の内部に充填された機能要素532、322、521を含む。【選択図】図1

    摘要翻译: 要解决的问题:提供其中以高密度布置有源元件和无源元件的薄集成电路器件。解决方案:半导体衬底101包括有源元件Q1和无源元件PS2。 有源元件Q1由半导体衬底101构成。无源元件PS2包括填充在沿厚度方向的槽状或孔状元件形成区域111,112和113中的功能元件532,322和521。 半导体衬底1。

    Functional material
    5.
    发明专利
    Functional material 有权
    功能材料

    公开(公告)号:JP2014063725A

    公开(公告)日:2014-04-10

    申请号:JP2013171259

    申请日:2013-08-21

    摘要: PROBLEM TO BE SOLVED: To provide a functional material capable of forming wiring, an electrode, a filling structure, a sealing structure, or a joining structure with high quality and high reliability, which is free from generation of voids, cracks, and the like, and to provide an electronic device.SOLUTION: The functional material according to the present invention contains at least two kinds of particles selected from first metal composite particles, second metal composite particles, and third metal composite particles. Each of the first metal composite particles, the second metal composite particles, and the third metal composite particles contain a plurality of kinds of metal components. The melting point T1 (°C) of the first metal composite particles, the melting point T2 (°C) of the second metal composite particles, and the melting point T3 (°C) of the third metal composite particles satisfy a relationship of T1>T2>T3.

    摘要翻译: 要解决的问题:为了提供能够形成布线的功能材料,电极,填充结构,密封结构或具有高质量和高可靠性的接合结构,其不产生空隙,裂纹等 ,并提供电子器件。解决方案:根据本发明的功能材料包含选自第一金属复合颗粒,第二金属复合颗粒和第三金属复合颗粒中的至少两种颗粒。 第一金属复合颗粒,第二金属复合颗粒和第三金属复合颗粒中的每一个都含有多种金属组分。 第一金属复合颗粒的熔点T1(℃),第二金属复合颗粒的熔点T2(℃)和第三金属复合颗粒的熔点T3(℃)满足关系式T1 > T2> T3。

    Functional material, electronic device, electromagnetic wave absorbing/shielding device and manufacturing method therefor
    7.
    发明专利
    Functional material, electronic device, electromagnetic wave absorbing/shielding device and manufacturing method therefor 有权
    功能材料,电子设备,电磁波吸收/屏蔽装置及其制造方法

    公开(公告)号:JP2013143216A

    公开(公告)日:2013-07-22

    申请号:JP2012002034

    申请日:2012-01-10

    CPC分类号: H01L2924/0002 H01L2924/00

    摘要: PROBLEM TO BE SOLVED: To provide a functional material which can achieve a dense metal/alloy filling structure, and is applicable to an electrode material, electrolytic material, wiring material, electronic component bonding material, sputtering target, and the like, and to provide an electronic device in which the functional material is applied to a functional part, an electromagnetic wave absorbing/shielding device and a method suitable for production thereof.SOLUTION: A binding region 1 has a nanocomposite structure containing an intermetallic compound or a metallic compound, and filling the periphery of metal/alloy particles 3 with a size of 200 nm or less. The binding region may have a nanocomposite structure containing a crystalline or amorphous glass component or ceramic. The metal/alloy particles 3 have a nanocomposite structure, and the minimum full size is preferably 1 μm or less.

    摘要翻译: 要解决的问题:提供能够实现致密的金属/合金填充结构的功能材料,并且可应用于电极材料,电解材料,布线材料,电子部件接合材料,溅射靶等,并且提供 将功能材料应用于功能部件的电子装置,电磁波吸收/屏蔽装置以及适于其制造的方法。解决方案:结合区域1具有包含金属间化合物或金属化合物的纳米复合结构,以及 填充尺寸为200nm以下的金属/合金粒子3的周边。 结合区可以具有包含结晶或非晶玻璃组分或陶瓷的纳米复合结构。 金属/合金粒子3具有纳米复合结构,最小全尺寸优选为1μm以下。

    Electronic apparatus
    8.
    发明专利
    Electronic apparatus 有权
    电子设备

    公开(公告)号:JP2013048187A

    公开(公告)日:2013-03-07

    申请号:JP2011186353

    申请日:2011-08-29

    CPC分类号: Y02E10/50

    摘要: PROBLEM TO BE SOLVED: To provide an electronic apparatus having metallized wiring which is excellent in conductivity, electrochemical stability, oxidation resistance, filling properties, compactness, and mechanical and physical strength, which achieves high bonding force and adhesive force to a substrate and high quality and high reliability.SOLUTION: A substrate 11 has metallized wiring 12 having a predetermined pattern. The metallized wiring 12 includes a metallized layer 121 and an insulation layer 122. The metallized layer 121 includes a high melting point metal component and a low melting point metal component, and the high melting point metal component and the low melting point metal component are diffusely joined to each other. The insulation layer 122 is formed concurrently with the metallized layer 121 and covers an outer surface of the metallized layer 121. An electronic component 14 electrically connects with the metallized layer 121 of the metallized wiring 12.

    摘要翻译: 解决的问题:提供一种具有导电性,电化学稳定性,抗氧化性,填充性,紧凑性和机械和物理强度优异的金属化布线的电子设备,其实现了对基板的高粘结力和粘合力 质量高,可靠性高。 解决方案:基板11具有预定图案的金属化布线12。 金属化布线12包括金属化层121和绝缘层122.金属化层121包括高熔点金属组分和低熔点金属组分,并且高熔点金属组分和低熔点金属组分是扩散的 相互加入 绝缘层122与金属化层121同时形成并覆盖金属化层121的外表面。电子部件14与金属化布线12的金属化层121电连接。(C)2013, JPO和INPIT

    Light-emitting diode, light-emitting device, lighting device, display, and signal light
    9.
    发明专利
    Light-emitting diode, light-emitting device, lighting device, display, and signal light 有权
    发光二极管,发光装置,照明装置,显示器和信号灯

    公开(公告)号:JP2011060996A

    公开(公告)日:2011-03-24

    申请号:JP2009208992

    申请日:2009-09-10

    CPC分类号: H01L33/382

    摘要: PROBLEM TO BE SOLVED: To provide an inexpensive light-emitting diode that achieves the large light-emission quantity, high luminous efficiency, and uniform surface light-emission, a light-emitting device using the same, a lighting device, a display, and a signal light. SOLUTION: A semiconductor light-emitting layer 2 is laminated on one side of a substrate 1. Electrodes 411-414 for supplying electric energy to the semiconductor light-emitting layer 2 are composed of a conductor filled in micropores 511-514 penetrating through the substrate and reaching the semiconductor light-emitting layer 2. COPYRIGHT: (C)2011,JPO&INPIT

    摘要翻译: 要解决的问题:为了提供实现大发光量,高发光效率和均匀的表面发光的廉价的发光二极管,使用该发光装置的发光装置,照明装置, 显示和信号灯。 解决方案:半导体发光层2层叠在基板1的一侧上。用于向半导体发光层2供电的电极411-414由填充有微孔511-514的导体构成,穿透 通过基板并到达半导体发光层2.版权所有(C)2011,JPO&INPIT

    Metal filling apparatus
    10.
    发明专利
    Metal filling apparatus 有权
    金属填充装置

    公开(公告)号:JP2010283034A

    公开(公告)日:2010-12-16

    申请号:JP2009133363

    申请日:2009-06-02

    摘要: PROBLEM TO BE SOLVED: To provide a metal filling apparatus for filling the fine space of an object with a metallic filler without generating a recessing and an air gap, a void and the like and being capable of achieving the reduction of a cost and an improvement in a treatment efficiency. SOLUTION: The metal filling apparatus includes: a first support 10 supporting the object 2 from the reverse side of the opening surfaces of the fine space under the state opening one of the opening surfaces of the fine space; and a second support 11 being joined with the first support 10 from the opening-surface side and sealing the object 2 in a treatment chamber A. The metal filling apparatus further includes: a molten-metal feeder 12 feeding the treatment chamber A with a molten metal M; and a pressure controller 13 controlling a pressure in the treatment chamber A. The metal filling apparatus includes a pressure means pressurizing the treatment chamber A until the molten metal is cured by a cooling after the inside of the fine space is filled with the molten metal M. COPYRIGHT: (C)2011,JPO&INPIT

    摘要翻译: 要解决的问题:提供一种金属填充设备,用于用金属填料填充物体的细小空间,而不产生凹陷和气隙,空隙等,并且能够实现成本的降低 并提高治疗效率。 解决方案:金属填充设备包括:第一支撑件10,其在打开微细空间的一个开口表面的状态下从微细空间的开口表面的相反侧支撑物体2; 并且第二支撑件11从开口表面侧与第一支撑件10接合并将物体2密封在处理室A中。金属填充设备还包括:熔融金属进料器12,将处理室A与熔融的 金属M 以及控制处理室A中的压力的​​压力控制器13.金属填充装置包括对处理室A进行加压的压力装置,直到在精细空间的内部填充有熔融金属M之后通过冷却固化熔融金属 版权所有(C)2011,JPO&INPIT