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公开(公告)号：TW201417198A
公开(公告)日：2014-05-01
申请号：TW102133445
申请日：2013-09-16
Inventor： 林俊成 , LIN, JING CHENG
IPC: H01L21/60 , H01L23/488
CPC classification number: H01L24/17 , H01L23/3192 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/023 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05018 , H01L2224/05082 , H01L2224/05558 , H01L2224/11 , H01L2224/1145 , H01L2224/1146 , H01L2224/11462 , H01L2224/116 , H01L2224/13 , H01L2224/13022 , H01L2224/13024 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/13655 , H01L2224/1601 , H01L2224/16058 , H01L2224/16145 , H01L2224/16148 , H01L2224/16238 , H01L2224/16503 , H01L2224/175 , H01L2224/81193 , H01L2224/81815 , H01L2225/06513 , H01L2225/06517 , H01L2924/0105 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00
Abstract: 半導體元件的接合結構包含具有第一金屬凸塊的第一半導體晶片和具有第二金屬凸塊的第二半導體晶片，並且更包含電性連接第一半導體晶片和第二半導體晶片的焊接結構，此焊接結構包含位於第一金屬凸塊與第二金屬凸塊之間的介金屬化合物區，以及沿著第一金屬凸塊和第二金屬凸塊的外壁形成的周圍部分，其中介金屬化合物區具有第一高度尺寸，而周圍部分則具有第二高度尺寸，且第二高度尺寸大於第一高度尺寸。
Abstract in simplified Chinese: 半导体组件的接合结构包含具有第一金属凸块的第一半导体芯片和具有第二金属凸块的第二半导体芯片，并且更包含电性连接第一半导体芯片和第二半导体芯片的焊接结构，此焊接结构包含位于第一金属凸块与第二金属凸块之间的介金属化合物区，以及沿着第一金属凸块和第二金属凸块的外壁形成的周围部分，其中介金属化合物区具有第一高度尺寸，而周围部分则具有第二高度尺寸，且第二高度尺寸大于第一高度尺寸。
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公开(公告)号：TWI538120B
公开(公告)日：2016-06-11
申请号：TW103111304
申请日：2014-03-26
Applicant: 美光科技公司 , MICRON TECHNOLOGY, INC.
Inventor： 甘德席 傑斯皮德S , GANDHI, JASPREET S. , 英格蘭 路克G , ENGLAND, LUKE G. , 菲 歐文R , FAY, OWEN R.
CPC classification number: H01L24/81 , H01L21/563 , H01L23/367 , H01L23/49816 , H01L23/49827 , H01L23/49894 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2224/08225 , H01L2224/11822 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/14131 , H01L2224/14134 , H01L2224/1601 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/16505 , H01L2224/1701 , H01L2224/17181 , H01L2224/175 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29309 , H01L2224/29311 , H01L2224/29316 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29499 , H01L2224/3201 , H01L2224/32054 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/3301 , H01L2224/33505 , H01L2224/73204 , H01L2224/73253 , H01L2224/81011 , H01L2224/81024 , H01L2224/81125 , H01L2224/81201 , H01L2224/81203 , H01L2224/81801 , H01L2224/81815 , H01L2224/81901 , H01L2224/81948 , H01L2224/83102 , H01L2224/83104 , H01L2224/83862 , H01L2224/83874 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2225/06582 , H01L2225/06589 , H01L2924/07811 , H01L2924/1461 , H01L2924/3841 , H01L2924/00 , H01L2924/014 , H01L2924/00014 , H01L2924/01047 , H01L2924/0105 , H01L2924/00012
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公开(公告)号：TWI502667B
公开(公告)日：2015-10-01
申请号：TW102133445
申请日：2013-09-16
Inventor： 林俊成 , LIN, JING CHENG
IPC: H01L21/60 , H01L23/488
CPC classification number: H01L24/17 , H01L23/3192 , H01L24/02 , H01L24/03 , H01L24/05 , H01L24/10 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2224/023 , H01L2224/0345 , H01L2224/03452 , H01L2224/03462 , H01L2224/0401 , H01L2224/05018 , H01L2224/05082 , H01L2224/05558 , H01L2224/11 , H01L2224/1145 , H01L2224/1146 , H01L2224/11462 , H01L2224/116 , H01L2224/13 , H01L2224/13022 , H01L2224/13024 , H01L2224/1308 , H01L2224/13082 , H01L2224/13083 , H01L2224/13084 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2224/13169 , H01L2224/13655 , H01L2224/1601 , H01L2224/16058 , H01L2224/16145 , H01L2224/16148 , H01L2224/16238 , H01L2224/16503 , H01L2224/175 , H01L2224/81193 , H01L2224/81815 , H01L2225/06513 , H01L2225/06517 , H01L2924/0105 , H01L2924/0132 , H01L2924/01327 , H01L2924/014 , H01L2924/00012 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00
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公开(公告)号：TW201448134A
公开(公告)日：2014-12-16
申请号：TW103111304
申请日：2014-03-26
Applicant: 美光科技公司 , MICRON TECHNOLOGY, INC.
Inventor： 甘德席 傑斯皮德S , GANDHI, JASPREET S. , 英格蘭 路克G , ENGLAND, LUKE G. , 菲 歐文R , FAY, OWEN R.
CPC classification number: H01L24/81 , H01L21/563 , H01L23/367 , H01L23/49816 , H01L23/49827 , H01L23/49894 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/83 , H01L25/0657 , H01L25/18 , H01L25/50 , H01L2224/08225 , H01L2224/11822 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/13139 , H01L2224/13147 , H01L2224/14131 , H01L2224/14134 , H01L2224/1601 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/16245 , H01L2224/16505 , H01L2224/1701 , H01L2224/17181 , H01L2224/175 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/29309 , H01L2224/29311 , H01L2224/29316 , H01L2224/29324 , H01L2224/29339 , H01L2224/29344 , H01L2224/29347 , H01L2224/29499 , H01L2224/3201 , H01L2224/32054 , H01L2224/32145 , H01L2224/32225 , H01L2224/32245 , H01L2224/3301 , H01L2224/33505 , H01L2224/73204 , H01L2224/73253 , H01L2224/81011 , H01L2224/81024 , H01L2224/81125 , H01L2224/81201 , H01L2224/81203 , H01L2224/81801 , H01L2224/81815 , H01L2224/81901 , H01L2224/81948 , H01L2224/83102 , H01L2224/83104 , H01L2224/83862 , H01L2224/83874 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06544 , H01L2225/06555 , H01L2225/06582 , H01L2225/06589 , H01L2924/07811 , H01L2924/1461 , H01L2924/3841 , H01L2924/00 , H01L2924/014 , H01L2924/00014 , H01L2924/01047 , H01L2924/0105 , H01L2924/00012
Abstract: 半導體裝置及裝置封裝包含透過複數個導電結構而電耦合至一基板之至少一半導體晶粒。該至少一半導體晶粒可為複數個記憶體晶粒，且該基板可為一邏輯晶粒。安置於該至少一半導體晶粒與該基板之間之一底部填充材料可包含一熱傳導材料。一電絕緣材料經安置於該複數個導電結構與該底部填充材料之間。諸如用於形成半導體裝置封裝之將一半導體晶粒附接至一基板的方法包含覆蓋或塗佈導電結構的至少一外側表面、使用一電絕緣材料來將該半導體晶粒電耦合至該基板，及在該半導體晶粒與該基板之間安置一熱傳導材料。
Abstract in simplified Chinese: 半导体设备及设备封装包含透过复数个导电结构而电耦合至一基板之至少一半导体晶粒。该至少一半导体晶粒可为复数个内存晶粒，且该基板可为一逻辑晶粒。安置于该至少一半导体晶粒与该基板之间之一底部填充材料可包含一热传导材料。一电绝缘材料经安置于该复数个导电结构与该底部填充材料之间。诸如用于形成半导体设备封装之将一半导体晶粒附接至一基板的方法包含覆盖或涂布导电结构的至少一外侧表面、使用一电绝缘材料来将该半导体晶粒电耦合至该基板，及在该半导体晶粒与该基板之间安置一热传导材料。
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