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1.发明授权Method, system, and program product for routing an integrated circuit to be manufactured by sidewall-image transfer 有权用于路由要通过侧壁图像传送制造的集成电路的方法，系统和程序产品公开(公告)号：US08549458B2
公开(公告)日：2013-10-01
申请号：US12614911
申请日：2009-11-09
申请人： Abdurrahman Sezginer
发明人： Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G06F17/5077 , G06F2217/12 , Y02P90/265
摘要： Disclosed is a method, apparatus, and program product for routing an electronic design using sidewall image transfer that is correct by construction. The layout is routed by construction to allow successful manufacturing with sidewall image transfer, since the router will not allow a routing configuration in the layout that cannot be successfully manufactured with a two-mask sidewall image transfer. A layout is produced that can be manufactured by a two-mask sidewall image transfer method. In one approach, interconnections can be in arbitrary directions. In another approach, interconnections follow grid lines in x and y-directions.
摘要翻译： 公开了一种使用通过构造正确的侧壁图像传送来路由电子设计的方法，装置和程序产品。 布局通过结构进行路由，以允许成功制造侧壁图像传输，因为路由器将不允许布局中的路由配置不能用双掩模侧壁图像传输成功制造。 产生可以通过双掩模侧壁图像转印方法制造的布局。 在一种方法中，互连可以是任意方向。 在另一种方法中，互连遵循x和y方向的网格线。
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2.发明授权公开(公告)号：US07743358B2
公开(公告)日：2010-06-22
申请号：US11203498
申请日：2005-08-13
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译： 用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。
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公开(公告)号：US07480891B2
公开(公告)日：2009-01-20
申请号：US11203505
申请日：2005-08-13
申请人： Abdurrahman Sezginer
发明人： Abdurrahman Sezginer
IPC分类号： G06F17/50
摘要： An apparatus and method for improving image quality in a photolithographic process includes calculating a figure-of-demerit for a photolithographic mask function and then adjusting said photolithographic mask function to reduce the figure of demerit.
摘要翻译： 用于改善光刻工艺中的图像质量的装置和方法包括计算光刻掩模功能的缺点，然后调整所述光刻掩模功能以减少刻痕图。
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公开(公告)号：US07277165B2
公开(公告)日：2007-10-02
申请号：US10860853
申请日：2004-06-04
申请人： Bo Wu , Abdurrahman Sezginer
发明人： Bo Wu , Abdurrahman Sezginer
IPC分类号： G01N21/00
CPC分类号： G03F7/70941 , G03F1/44 , G03F7/70591
摘要： A method of measuring flare in an optical lithographic system utilizes an exposure mask with first and second discrete opaque features each having rotational symmetry of order greater than four and of different respective areas. The exposure mask is positioned in the lithographic system such that actinic radiation emitted by the lithographic system illuminates the sensitive surface of an exposure target through the exposure mask. The extent to which regions of the sensitive surface that are within the geometric image of a feature of the exposure mask are exposed to actinic radiation during due to flare is measured.
摘要翻译： 一种在光学平版印刷系统中测量光斑的方法利用具有第一和第二离散不透明特征的曝光掩模，每个不透明特征具有大于四的旋转对称性以及不同的相应区域。 曝光掩模位于光刻系统中，使得由光刻系统发射的光化辐射通过曝光掩模照射曝光目标的敏感表面。 测量在曝光掩模的特征的几何图像内的敏感表面的区域在由于耀斑期间暴露于光化辐射的程度。
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5.发明授权Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes 有权用于设计可制造图案的方法和系统，其描述了图案化工艺的图案和位置依赖性质公开(公告)号：US07266800B2
公开(公告)日：2007-09-04
申请号：US10861170
申请日：2004-06-04
申请人： Abdurrahman Sezginer
发明人： Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F7/70425 , G03F7/705 , G06F17/50 , G06F2217/12 , Y02P90/265
摘要： Computational models of a patterning process are described. Any one of these computational models can be implemented as computer-readable program code embodied in computer-readable media. The embodiments described herein explain techniques that can be used to adjust parameters of these models according to measurements, as well as how predictions made from these models can be used to correct lithography data. Corrected lithography data can be used to manufacture a device, such as an integrated circuit.
摘要翻译： 描述了图案化过程的计算模型。 这些计算模型中的任何一个可以被实现为体现在计算机可读介质中的计算机可读程序代码。 这里描述的实施例解释了可以用于根据测量来调整这些模型的参数的技术，以及如何使用这些模型做出的预测来校正光刻数据。 校正的光刻数据可用于制造诸如集成电路的器件。
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6.发明授权Method for correcting position-dependent distortions in patterning of integrated circuits 有权用于校正集成电路图案化中的位置相关失真的方法公开(公告)号：US07246343B2
公开(公告)日：2007-07-17
申请号：US10933192
申请日：2004-09-01
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method and system for reducing the computation time required to apply position-dependent corrections to lithography, usually mask, data is disclosed. Optical proximity or process corrections are determined for a few instances of a repeating cluster or object, usually at widely separated locations and then interpolating the corrections to the other instances of the repeating cluster based on their positions in the exposure field. Or, optical proximity corrections can be applied to the repeating cluster of objects for different values of flare intensity, or another parameter of patterning imperfection, such as by calculating the value of the flare at the location of each instance of the repeating cluster, and interpolating the optical proximity corrections to those values of flare.
摘要翻译： 公开了一种用于减少对光刻应用位置相关校正所需的计算时间的方法和系统，通常是屏蔽数据。 通常在广泛分离的位置处对重复的簇或对象的几个实例确定光学邻近度或过程校正，然后基于它们在曝光区域中的位置将校正内插到重复簇的其他实例。 或者，可以将光学邻近校正应用于不同的闪光强度值的对象的重复簇或者图案化缺陷的另一参数，例如通过计算重复簇的每个实例的位置处的闪光的值，以及内插 光学接近度校正到这些闪光值。
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7.发明授权Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay 有权用于覆盖计量的衍射，非周期性目标和检测总重叠的方法公开(公告)号：US07230704B2
公开(公告)日：2007-06-12
申请号：US10858691
申请日：2004-06-02
IPC分类号： G01B11/00
CPC分类号： G03F7/70633 , G01N21/4788
摘要： A method for measuring overlay in semiconductor wafers includes a calibration phase in which a series of calibration samples are analyzed. Each calibration sample has an overlay that is known to be less than a predetermined limit. A difference spectrum for a pair of reflectively symmetric overlay targets is obtained for each calibration sample. The difference spectra are then combined to define a gross overlay indicator. In subsequent measurements of actual wafers, difference spectra are compared to the overlay indicator to detect cases of gross overlay.
摘要翻译： 用于测量半导体晶片中覆盖层的方法包括其中分析一系列校准样本的校准阶段。 每个校准样品具有已知小于预定极限的覆盖层。 对于每个校准样品，获得一对反射对称覆盖目标的差分谱。 然后组合差分谱以定义总重叠指示符。 在随后的实际晶片测量中，将差分光谱与覆盖指示符进行比较，以检测总重叠的情况。
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公开(公告)号：US20060248497A1
公开(公告)日：2006-11-02
申请号：US11203329
申请日：2005-08-13
IPC分类号： G06F17/50
摘要： An apparatus and method of compensating for lens imperfections in a projection lithography tool, includes extracting from a diffraction image created by the projection lithography tool a lens transmittance function, and then using the extracted lens transmittance function as a compensator in the lithography projection tool. Another preferred apparatus and method of synthesizing a photomask pattern includes obtaining a phase and an amplitude of a transmittance function of an imaging system; forming a computational model of patterning that includes the transmittance function of the imaging system; and then synthesizing a mask pattern from a given target pattern, by minimizing differences between the target pattern and another pattern that the computational model predicts the synthesized mask pattern will form on a wafer.
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公开(公告)号：US20060146321A1
公开(公告)日：2006-07-06
申请号：US11364709
申请日：2006-02-28
IPC分类号： G01N21/88
CPC分类号： G01N21/9501 , G01N21/274 , G01N21/278 , G01N21/93
摘要： A calibration method suitable for highly precise and highly accurate surface metrology measurements is described. In preferred embodiments, an optical inspection tool including a movable optics system is characterized in terms of position and wavelength dependent quantities over a range of motion. Once the position-dependant quantities are determined at various wavelengths and positions, they are stored and used to interpret data from test wafers having an unknown metrology. Free of position-dependent variations and other information pertaining to the measurement system, the accuracy of the resulting wafer measurement more closely matches the precision of the tool than existing techniques. In particular embodiments, a portion of the characterization of the optical system is accomplished by using tilted black glass to provide a non-reflective reference.
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公开(公告)号：US07042569B2
公开(公告)日：2006-05-09
申请号：US10917219
申请日：2004-08-12
IPC分类号： G01B11/00
CPC分类号： G03F7/70633 , H01L22/34 , H01L2223/54453
摘要： Alignment accuracy between two or more patterned layers is measured using a metrology target comprising substantially overlapping diffraction gratings formed in a test area of the layers being tested. An optical instrument illuminates all or part of the target area and measures the optical response. The instrument can measure transmission, reflectance, and/or ellipsometric parameters as a function of wavelength, polar angle of incidence, azimuthal angle of incidence, and/or polarization of the illumination and detected light. Overlay error or offset between those layers containing the test gratings is determined by a processor programmed to calculate an optical response for a set of parameters that include overlay error, using a model that accounts for diffraction by the gratings and interaction of the gratings with each others' diffracted field. The model parameters might also take account of manufactured asymmetries. The calculation may involve interpolation of pre-computed entries from a database accessible to the processor. The calculated and measured responses are iteratively compared and the model parameters changed to minimize the difference.
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