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61 条记录 (耗时 0.016 秒)

    Method of Fabricating High-Voltage Semiconductor Device
    1.
    发明申请
    Method of Fabricating High-Voltage Semiconductor Device 有权
    制造高压半导体器件的方法

    公开(公告)号：US20110097864A1

    公开(公告)日：2011-04-28

    申请号：US12985093

    申请日：2011-01-05

    申请人： Jae-gil Lee ,  Chang-wook Kim ,  Ho-cheol Jang ,  Chong-man Yun

    发明人： Jae-gil Lee ,  Chang-wook Kim ,  Ho-cheol Jang ,  Chong-man Yun

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type.

    摘要翻译： 一种制造高电压半导体器件的方法包括以下步骤：提供半导体层; 在所述半导体层中形成多个沟槽以在相邻沟槽之间的所述半导体层中限定出第一导电类型的多个柱，其中所述沟槽从所述半导体层的顶表面朝向所述半导体层的底表面延伸; 在每个沟槽的至少侧壁上形成第二导电类型的电荷补偿层至预定厚度，从而在每个沟槽中形成凹槽; 并且用第一导电类型的电荷补偿塞基本上填充每个凹槽。

    Electron emission source, electron emission device and method of preparing the electron emission source
    2.
    发明申请
    Electron emission source, electron emission device and method of preparing the electron emission source 审中-公开
    电子发射源，电子发射装置和制备电子发射源的方法

    公开(公告)号：US20090033196A1

    公开(公告)日：2009-02-05

    申请号：US12154035

    申请日：2008-05-19

    申请人： Young-Mi Cho ,  Chang-Wook Kim ,  Hee-Sung Moon

    发明人： Young-Mi Cho ,  Chang-Wook Kim ,  Hee-Sung Moon

    IPC分类号： H01J1/02

    CPC分类号： H01J1/304 ,  H01J3/021 ,  H01J2201/30426 ,  H01J2201/30453

    摘要： Electron emission sources, electron emission devices including the electron emission sources, and methods of making the electron emission sources are provided. The electron emission source includes a carbon-based material, and a degradation prevention material for preventing degradation of the carbon-based material. A binding energy between the degradation prevention material and external oxygen is greater than a binding energy between the carbon-based material and the external oxygen. The electron emission sources have excellent field emission efficiencies and long lifetimes.

    摘要翻译： 提供电子发射源，包括电子发射源的电子发射装置，以及制造电子发射源的方法。 电子发射源包括碳基材料和用于防止碳基材料劣化的防分解材料。 降解防止材料和外部氧之间的结合能大于碳基材料和外部氧之间的结合能。 电子发射源具有优异的场发射效率和长寿命。

    Light emitting diode array module for providing backlight and backlight unit having the same
    5.
    发明申请
    Light emitting diode array module for providing backlight and backlight unit having the same 有权
    用于提供背光和背光单元的发光二极管阵列模块

    公开(公告)号：US20050243576A1

    公开(公告)日：2005-11-03

    申请号：US10890201

    申请日：2004-07-14

    申请人： Jung Kyu Park ,  Chang Wook Kim ,  Young Sam Park

    发明人： Jung Kyu Park ,  Chang Wook Kim ,  Young Sam Park

    IPC分类号： F21S2/00 ,  F21V5/00 ,  F21V5/04 ,  F21V7/04 ,  F21Y101/02 ,  G02F1/1335 ,  G02F1/13357 ,  H01L33/00 ,  H01L33/56 ,  H01L33/58 ,  H01L33/60

    CPC分类号： G02F1/133603 ,  F21K9/00 ,  F21Y2103/10 ,  F21Y2115/10 ,  Y10S362/80

    摘要： The present invention provides a Light Emitting Diode (LED) array module for providing backlight, which can be used as an independent device with a plurality of LEDs being integrally packaged, and which can be universally used regardless of a screen size, and a backlight unit having the same. The LED array module used as a light source of backlight includes a bar-shaped Printed Circuit Board (PCB) on which conductive patterns for transmitting power are formed, a base formed on the PCB and made of a heat conductive material, a plurality of LED chips mounted on the base in a line and electrically connected to the conductive patterns of the PCB, a reflector formed to surround the plurality of the LED chips and adapted to reflect light radiated from the plurality of LED chips upward, and a lens formed above the plurality of LED chips and reflector to have a bar shape and adapted to diffuse the light radiated from the plurality of LED chips and reflector in a horizontal direction.

    摘要翻译： 本发明提供了一种用于提供背光的发光二极管（LED）阵列模块，其可以用作具有整体封装的多个LED的独立装置，并且可以普遍使用，而不管屏幕尺寸如何，以及背光单元 有同样的 用作背光源的LED阵列模块包括形成有用于发射功率的导电图案的条形印刷电路板（PCB），形成在PCB上的由导热材料制成的基底，多个LED 芯片安装在基座上并与PCB的导电图形电连接，形成为围绕多个LED芯片的反射镜，并且适于反射从多个LED芯片向上辐射的光，以及形成在 多个LED芯片和反射器具有条形并且适于在水平方向上扩散从多个LED芯片和反射器辐射的光。

    Photoresist solution for phosphor slurry applied to color cathode ray tube
    6.
    发明授权
    Photoresist solution for phosphor slurry applied to color cathode ray tube 失效
    用于荧光体浆料的光致抗蚀剂溶液施加到彩色阴极射线管上

    公开(公告)号：US6127074A

    公开(公告)日：2000-10-03

    申请号：US209224

    申请日：1998-12-11

    申请人： Seung-Jun You ,  Eak-Cheol Eam ,  Young-Jong Kang ,  Chang-Wook Kim ,  Gi-Wook Kang ,  Eun-Ha Heo

    发明人： Seung-Jun You ,  Eak-Cheol Eam ,  Young-Jong Kang ,  Chang-Wook Kim ,  Gi-Wook Kang ,  Eun-Ha Heo

    IPC分类号： G03F7/00 ,  G03F7/012 ,  G03F7/021 ,  H01J9/227 ,  G03C5/00

    CPC分类号： H01J9/2271 ,  G03F7/0007 ,  G03F7/0125 ,  G03F7/0212

    摘要： The present invention relates to photoresist solution for phosphor slurry for use in the color cathode ray tube. The photoresist solution of the present invention comprises Diazo or Bisazide photosensitizer; polymer. which is mixed with said Diazo or Bisazide photosensitizer, obtained by polymerization of hydroxy ethyl acrylate base. The photoresist solution of the present invention improves the adhesive strength by using of the Diazo or Bisazide photosensitizer and the polymer, thus the green, blue and red phosphor screen being uniformly formed and the color residue being disappeared. Further, since the photosensitizer not containing heavy metal is used, it does not cause any environmental problem. Also, it can be stored for a long time by using the initiator without hydrochloric acid at the time of polymerization.

    摘要翻译： 本发明涉及用于彩色阴极射线管的磷光体浆料用光致抗蚀剂溶液。 本发明的光致抗蚀剂溶液包含重氮或双叠氮敏感剂; 聚合物。 其与通过聚合丙烯酸羟基乙酯基团获得的所述重氮或双叠氮敏感剂混合。 本发明的光致抗蚀剂溶液通过使用重氮或双叠氮化合物光敏剂和聚合物来改善粘合强度，因此绿，蓝和红荧光屏均匀地形成，并且残留物消失。 此外，由于不使用重金属的光敏剂，因此不会引起任何环境问题。 另外，聚合时可以使用无盐酸的引发剂长时间保存。

    Variable capacitor, impedance matching device, mobile terminal thereof and method for matching impedance
    8.
    发明授权
    Variable capacitor, impedance matching device, mobile terminal thereof and method for matching impedance 有权
    可变电容器，阻抗匹配装置，其移动终端和匹配阻抗的方法

    公开(公告)号：US09484880B2

    公开(公告)日：2016-11-01

    申请号：US13989281

    申请日：2011-11-07

    申请人： Chang Wook Kim

    发明人： Chang Wook Kim

    IPC分类号： H03H7/38 ,  H01G7/00 ,  H03H7/00

    CPC分类号： H03H7/38 ,  H01G7/00 ,  H03H2007/008

    摘要： Disclosed is an impedance matching device. Variable devices of the impedance matching device installed in a mobile terminal, such as a portable terminal, are configured to have a MEMS structure. The MEMS structure and other components are integrated as one package, so the manufacturing cost is reduced and the manufacturing efficiency is improved.

    摘要翻译： 公开了一种阻抗匹配装置。 安装在诸如便携式终端的移动终端中的阻抗匹配装置的可变装置被配置为具有MEMS结构。 MEMS结构等组件集成为一体，降低制造成本，提高制造效率。

    Method of fabricating high-voltage semiconductor device
    9.
    发明授权
    Method of fabricating high-voltage semiconductor device 有权
    制造高压半导体器件的方法

    公开(公告)号：US08716085B2

    公开(公告)日：2014-05-06

    申请号：US12985093

    申请日：2011-01-05

    申请人： Jae-gil Lee ,  Chang-wook Kim ,  Ho-cheol Jang ,  Chong-man Yun

    发明人： Jae-gil Lee ,  Chang-wook Kim ,  Ho-cheol Jang ,  Chong-man Yun

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66712 ,  H01L29/7395 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type.

    摘要翻译： 一种制造高电压半导体器件的方法包括以下步骤：提供半导体层; 在所述半导体层中形成多个沟槽以在相邻沟槽之间的所述半导体层中限定出第一导电类型的多个柱，其中所述沟槽从所述半导体层的顶表面朝向所述半导体层的底表面延伸; 在每个沟槽的至少侧壁上形成第二导电类型的电荷补偿层至预定厚度，从而在每个沟槽中形成凹槽; 并且用第一导电类型的电荷补偿塞基本上填充每个凹槽。